loadpatents
name:-0.016797065734863
name:-0.019206047058105
name:-0.00063514709472656
Wecker; Joachim Patent Filings

Wecker; Joachim

Patent Applications and Registrations

Patent applications and USPTO patent grants for Wecker; Joachim.The latest application filed is for "sequential functionalization of phosphorescent emitter layers".

Company Profile
0.14.12
  • Wecker; Joachim - Roettenbach DE
  • Wecker; Joachim - Rottenbach DE
  • Wecker; Joachim - Erlangen DE
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Sequential functionalization of phosphorescent emitter layers
Grant 10,347,849 - Krestel , et al. July 9, 2
2019-07-09
Sequential Functionalization Of Phosphorescent Emitter Layers
App 20180182979 - Krestel; Ana-Maria ;   et al.
2018-06-28
Conversion Film For Converting Ionizing Radiation, Radiation Detector
App 20160327655 - Hartmann; David ;   et al.
2016-11-10
Integrated circuits, cell, cell arrangement, method of reading a cell, memory module
Grant 7,755,936 - Wecker , et al. July 13, 2
2010-07-13
Integrated Circuits, Cell, Cell Arrangement, Method of Reading a Cell, Memory Module
App 20090190390 - Wecker; Joachim ;   et al.
2009-07-30
Force sensor array having magnetostrictive magnetoresistive sensors and method for determining a force
Grant 7,535,217 - Quandt , et al. May 19, 2
2009-05-19
MRAM memory cell having a weak intrinsic anisotropic storage layer and method of producing the same
Grant 7,436,700 - Ruehrig , et al. October 14, 2
2008-10-14
MRAM Memory Cell Having a Weak Intrinsic Anisotropic Storage Layer and Method of Producing the Same
App 20080002462 - Ruehrig; Manfred ;   et al.
2008-01-03
MRAM memory cell having a weak intrinsic anisotropic storage layer and method of producing the same
Grant 7,280,393 - Ruehrig , et al. October 9, 2
2007-10-09
TMR sensor
Grant 7,234,360 - Quandt , et al. June 26, 2
2007-06-26
MRAM memory cell having a weak intrinsic anisotropic storage layer and method of producing the same
App 20070086236 - Ruehrig; Manfred ;   et al.
2007-04-19
Multilayer force sensor and method for determining a force
App 20060251928 - Quandt; Eckhardt ;   et al.
2006-11-09
Force sensor array having magnetostrictive magnetoresistive sensors and method for determining a force
App 20060246271 - Quandt; Eckard ;   et al.
2006-11-02
Method for homogeneously magnetizing an exchange-coupled layer system of a digital magnetic memory location device
Grant 7,075,814 - Brueckl , et al. July 11, 2
2006-07-11
Sensor device having a magnetostrictive force sensor
Grant 6,988,414 - Ruhrig , et al. January 24, 2
2006-01-24
MRAM memory cell having a weak intrinsic anisotropic storage layer and method of producing the same
App 20050174838 - Ruehrig, Manfred ;   et al.
2005-08-11
Digital magnetic memory cell device
Grant 6,903,430 - Ruhrig , et al. June 7, 2
2005-06-07
Method for homogeneously magnetizing an exchange-coupled layer system of a digital magnetic memory location device
App 20050105355 - Brueckl, Hubert ;   et al.
2005-05-19
Sensor device having a magnetostrictive force sensor
App 20040216534 - Ruhrig, Manfred ;   et al.
2004-11-04
TMR sensor
App 20040050172 - Quandt, Eckhard ;   et al.
2004-03-18
Digital magnetic memory cell device
App 20030063492 - Ruhrig, Manfred ;   et al.
2003-04-03
Contactless proximity switch
Grant 6,060,969 - Hufgard , et al. May 9, 2
2000-05-09
Method for preparing a structure having enhanced magnetoresistance, and use of the structure
Grant 5,498,298 - Wecker , et al. March 12, 1
1996-03-12
Process for the production of an anisotropic magnetic material based upon the Sm-Fe-N system
Grant 5,137,588 - Wecker , et al. August 11, 1
1992-08-11
Method for the epitaxial preparation of a layer of a metal-oxide superconducting material with a high transition temperature
Grant 4,950,644 - Schultz , et al. August 21, 1
1990-08-21
Method for preparing superconducting oxide films by seeding formation and heat treatment
Grant 4,940,842 - Schultz , et al. July 10, 1
1990-07-10

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