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Set Of Integrated Standard Cells
App 20220199648 - WEBER; Olivier ; et al. | 2022-06-23 |
Integrated Circuit Including Bipolar Transistors
App 20220020816 - BOIVIN; Philippe ; et al. | 2022-01-20 |
Strained Transistors And Phase Change Memory
App 20210343788 - BERTHELON; Remy ; et al. | 2021-11-04 |
Integrated circuit including bipolar transistors
Grant 11,152,430 - Boivin , et al. October 19, 2 | 2021-10-19 |
Resistive RAM memory cell
Grant 10,482,957 - Boivin , et al. Nov | 2019-11-19 |
Integrated Circuit Including Bipolar Transistors
App 20190312088 - BOIVIN; Philippe ; et al. | 2019-10-10 |
Method of forming MOS and bipolar transistors
Grant 10,381,344 - Weber , et al. A | 2019-08-13 |
Method of localized modification of the stresses in a substrate of the SOI type, in particular FD SOI type, and corresponding device
Grant 10,381,478 - Boeuf , et al. A | 2019-08-13 |
Device comprising multiple gate structures and method of simultaneously manufacturing different transistors
Grant 10,332,808 - Julien , et al. | 2019-06-25 |
Chip Containing An Onboard Non-volatile Memory Comprising A Phase-change Material
App 20190140176 - ARNAUD; Franck ; et al. | 2019-05-09 |
Resistive Ram Memory Cell
App 20180330780 - BOIVIN; Philippe ; et al. | 2018-11-15 |
Method Of Simultaneously Manufacturing Different Transistors
App 20180269115 - Julien; Franck ; et al. | 2018-09-20 |
Method Of Forming Mos And Bipolar Transistors
App 20180175022 - Weber; Olivier ; et al. | 2018-06-21 |
Fdsoi-type Field-effect Transistors
App 20180097014 - Barral; Vincent ; et al. | 2018-04-05 |
Method of forming MOS and bipolar transistors
Grant 9,929,146 - Weber , et al. March 27, 2 | 2018-03-27 |
Method of manufacturing a device with MOS transistors
Grant 9,876,032 - Chhun , et al. January 23, 2 | 2018-01-23 |
Method Of Forming Mos And Bipolar Transistors
App 20170271325 - Weber; Olivier ; et al. | 2017-09-21 |
Method Of Localized Modification Of The Stresses In A Substrate Of The Soi Type, In Particular Fd Soi Type, And Corresponding Device
App 20170213910 - Boeuf; Frederic ; et al. | 2017-07-27 |
Method of localized modification of the stresses in a substrate of the SOI type, in particular FD SOI type, and corresponding device
Grant 9,653,538 - Boeuf , et al. May 16, 2 | 2017-05-16 |
Method Of Manufacturing A Device With Mos Transistors
App 20170117296 - Chhun; Sonarith ; et al. | 2017-04-27 |
SOI integrated circuit comprising adjacent cells of different types
Grant 9,190,334 - Thomas , et al. November 17, 2 | 2015-11-17 |
Transistors with various levels of threshold voltages and absence of distortions between nMOS and pMOS
Grant 9,099,354 - Weber , et al. August 4, 2 | 2015-08-04 |
Transistors With Various Levels Of Threshold Voltages And Absence Of Distortions Between Nmos And Pmos
App 20150041900 - Weber; Olivier ; et al. | 2015-02-12 |
Method Of Localized Modification Of The Stresses In A Substrate Of The Soi Type, In Particular Fd Soi Type, And Corresponding Device
App 20150021692 - Boeuf; Frederic ; et al. | 2015-01-22 |
Soi Integrated Circuit Comprising Adjacent Cells Of Different Types
App 20130065366 - Thomas; Olivier ; et al. | 2013-03-14 |
Shoe, particularly sport or leisure shoe
Grant 8,006,410 - Romboli , et al. August 30, 2 | 2011-08-30 |
Shoe, particularly sport or leisure shoe
App 20080244928 - Romboli; Sandra ; et al. | 2008-10-09 |
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