WAVESQUARE INC.

Patent Applications and Registrations

Patent applications and USPTO patent grants for WAVESQUARE INC..The latest application filed is for "light-emitting element chip and manufacturing method therefor".

Company Profile

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WAVESQUARE INC. - Yongin KR
WAVESQUARE INC. - Yongin-City, Gyeonggi-Do KR
WAVESQUARE INC. - Yongin-City KR

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Vertically structured group III nitride semiconductor LED chip and method for manufacturing the same Grant 9,502,603 - Cho , et al. November 22, 2	2016-11-22
Vertically structured group III nitride semiconductor LED chip and method for manufacturing the same Grant 9,012,935 - Cho , et al. April 21, 2	2015-04-21
Vertically structured group III nitride semiconductor LED chip and method for manufacturing the same Grant 8,962,362 - Cho , et al. February 24, 2	2015-02-24
Semiconductor device and manufacturing method therefor Grant 8,963,290 - Toba , et al. February 24, 2	2015-02-24
Lighting element Grant D711,583 - Cho , et al. August 19, 2	2014-08-19
Lighting element Grant D711,582 - Cho , et al. August 19, 2	2014-08-19
Lighting element Grant D711,581 - Cho , et al. August 19, 2	2014-08-19
Light-emitting Element Chip And Manufacturing Method Therefor App 20140217457 - Cho; Meoung Whan ; et al.	2014-08-07
Lighting elements Grant D703,863 - Cho , et al. April 29, 2	2014-04-29
Semiconductor Device And Manufacturing Method Therefor App 20140015105 - Toba; Ryuichi ; et al.	2014-01-16
Vertically Structured Group Iii Nitride Semiconductor Led Chip And Method For Manufacturing The Same App 20140001511 - CHO; Meoung Whan ; et al.	2014-01-02
Method for growth of GaN single crystal, method for preparation of GaN substrate, process for producing GaN-based element, and GaN-based element Grant 8,124,504 - Yao , et al. February 28, 2	2012-02-28
Semiconductor substrate fabrication by etching of a peeling layer Grant 8,119,499 - Yao , et al. February 21, 2	2012-02-21
Method for growth of GaN single crystal, method for preparation of GaN substrate, process for producing GaN-based element, and GaN-based element Grant 7,829,435 - Yao , et al. November 9, 2	2010-11-09

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