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name:-0.016661167144775
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Watanabe; Yukimune Patent Filings

Watanabe; Yukimune

Patent Applications and Registrations

Patent applications and USPTO patent grants for Watanabe; Yukimune.The latest application filed is for "single crystal substrate, method for producing single crystal substrate, and silicon carbide substrate".

Company Profile
3.16.18
  • Watanabe; Yukimune - Hokuto JP
  • WATANABE; Yukimune - Hokuto-shi JP
  • Watanabe; Yukimune - Chino JP
  • Watanabe; Yukimune - Tsukuba JP
  • Watanabe; Yukimune - Tsukuba-shi JP
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Single crystal substrate with undulating ridges and silicon carbide substrate
Grant 11,404,269 - Watanabe , et al. August 2, 2
2022-08-02
Method for producing single crystal substrate having a plurality of grooves using a pair of masks
Grant 11,142,821 - Watanabe , et al. October 12, 2
2021-10-12
Single Crystal Substrate, Method For Producing Single Crystal Substrate, And Silicon Carbide Substrate
App 20200140998 - WATANABE; Yukimune ;   et al.
2020-05-07
Single Crystal Substrate And Silicon Carbide Substrate
App 20200135461 - WATANABE; Yukimune ;   et al.
2020-04-30
Photoelectric Conversion Element, Photoelectric Conversion Module, And Electronic Device
App 20190280141 - TAKEUCHI; Masahiro ;   et al.
2019-09-12
Silicon carbide substrate and method for producing silicon carbide substrate
Grant 9,882,010 - Watanabe January 30, 2
2018-01-30
Method for producing 3C-SiC epitaxial layer, 3C-SiC epitaxial substrate, and semiconductor device
Grant 9,758,902 - Watanabe , et al. September 12, 2
2017-09-12
Method of forming a laminate of epitaxially grown cubic silicon carbide layers, and method of forming a substrate-attached laminate of epitaxially grown cubic silicon carbide layers
Grant 9,732,439 - Watanabe August 15, 2
2017-08-15
Substrate with silicon carbide film, semiconductor device, and method for producing substrate with silicon carbide film
Grant 9,536,954 - Watanabe January 3, 2
2017-01-03
Silicon Carbide Substrate And Method For Producing Silicon Carbide Substrate
App 20160343570 - WATANABE; Yukimune
2016-11-24
Substrate with silicon carbide film, method for producing substrate with silicon carbide film, and semiconductor device
Grant 9,362,368 - Watanabe June 7, 2
2016-06-07
Substrate With Silicon Carbide Film, Semiconductor Device, And Method For Producing Substrate With Silicon Carbide Film
App 20160126320 - WATANABE; Yukimune
2016-05-05
Substrate With Silicon Carbide Film, Method For Producing Substrate With Silicon Carbide Film, And Semiconductor Device
App 20160126321 - WATANABE; Yukimune
2016-05-05
Cubic Silicon Carbide Film Manufacturing Method, Cubic Silicon Carbide Film-attached Substrate Manufacturing Method, And Power Device By Use Of The Cubic Silicon Carbide Film
App 20150275394 - WATANABE; Yukimune
2015-10-01
Method of manufacturing semiconductor device and semiconductor device having oxide film crystallized by a thermal treatment
Grant 9,064,802 - Watanabe June 23, 2
2015-06-23
Method For Producing 3c-sic Epitaxial Layer, 3c-sic Epitaxial Substrate, And Semiconductor Device
App 20150108504 - WATANABE; Yukimune ;   et al.
2015-04-23
Semiconductor substrate and method for producing semiconductor substrate
Grant 8,986,464 - Watanabe March 24, 2
2015-03-24
Semiconductor substrate and semiconductor substrate manufacturing method
Grant 8,847,236 - Watanabe September 30, 2
2014-09-30
Semiconductor Substrate And Semiconductor Substrate Manufacturing Method
App 20130181230 - WATANABE; Yukimune
2013-07-18
Semiconductor Substrate And Method For Producing Semiconductor Substrate
App 20120235163 - WATANABE; Yukimune
2012-09-20
Cubic Silicon Carbide Film Manufacturing Method, And Cubic Silicon Carbide Film-attached Substrate Manufacturing Method
App 20120037067 - WATANABE; Yukimune
2012-02-16
Semiconductor device and manufacturing method of the semiconductor device
Grant 7,968,396 - Watanabe , et al. June 28, 2
2011-06-28
Method of nickel disilicide formation and method of nickel disilicate source/drain formation
Grant 7,947,560 - Watanabe , et al. May 24, 2
2011-05-24
Method of manufacturing semiconductor device that includes forming metal oxide film on semiconductor wafer
Grant 7,713,884 - Ito , et al. May 11, 2
2010-05-11
Semiconductor device and manufacturing method of the semiconductor device
App 20100072551 - Watanabe; Yukimune ;   et al.
2010-03-25
Semiconductor device and manufacturing method of the semiconductor device
Grant 7,645,655 - Watanabe , et al. January 12, 2
2010-01-12
Method Of Manufacturing Semiconductor Device
App 20080318439 - Ito; Hiromi ;   et al.
2008-12-25
Method Of Manufacturing Semiconductor Device And Semiconductor Device
App 20080303119 - WATANABE; Yukimune
2008-12-11
Semiconductor device and manufacturing method of the same
App 20080067590 - Mise; Nobuyuki ;   et al.
2008-03-20
Method for forming silicide and method for fabricating semiconductor device
App 20070202692 - Watanabe; Yukimune ;   et al.
2007-08-30
Semiconductor device and manufacturing method of the semiconductor device
App 20060284220 - Watanabe; Yukimune ;   et al.
2006-12-21
Semiconductor device and manufacturing method of the semiconductor device
App 20060281273 - Watanabe; Yukimune ;   et al.
2006-12-14

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