loadpatents
Patent applications and USPTO patent grants for WATANABE; Kiminori.The latest application filed is for "electrostatic protection device and light-emitting module".
Patent | Date |
---|---|
Electrostatic Protection Device And Light-emitting Module App 20160079218 - WATANABE; Kiminori ;   et al. | 2016-03-17 |
Semiconductor Device App 20120139005 - IKIMURA; Takehito ;   et al. | 2012-06-07 |
Semiconductor device having a vertical transistor structure App 20080029809 - Morioka; Jun ;   et al. | 2008-02-07 |
Semiconductor Device App 20070108518 - ENDO; Koichi ;   et al. | 2007-05-17 |
Lateral high-breakdown-voltage transistor having drain contact region Grant 6,989,568 - Watanabe , et al. January 24, 2 | 2006-01-24 |
Lateral high-breakdown-voltage transistor App 20040150041 - Watanabe, Kiminori ;   et al. | 2004-08-05 |
Lateral high-breakdown-voltage transistor Grant 6,707,104 - Watanabe , et al. March 16, 2 | 2004-03-16 |
Lateral high-breakdown-voltage transistor App 20030038307 - Watanabe, Kiminori ;   et al. | 2003-02-27 |
Lateral high-breakdown-voltage transistor Grant 6,489,653 - Watanabe , et al. December 3, 2 | 2002-12-03 |
Lateral high-breakdown-voltage transistor App 20010015459 - Watanabe, Kiminori ;   et al. | 2001-08-23 |
Conductivity modulated MOSFET Grant 6,025,622 - Nakagawa , et al. February 15, 2 | 2000-02-15 |
Method of operating thyristor with insulated gates Grant 5,463,231 - Ogura , et al. October 31, 1 | 1995-10-31 |
Conductivity-modulation metal oxide field effect transistor with single gate structure Grant 5,237,186 - Nakagawa , et al. August 17, 1 | 1993-08-17 |
Conductivity-modulation metal oxide semiconductor field effect transistor Grant 5,168,333 - Nakagawa , et al. December 1, 1 | 1992-12-01 |
Conductivity-modulation metal oxide semiconductor field effect transistor Grant 5,124,773 - Nakagawa , et al. June 23, 1 | 1992-06-23 |
Conductivity-modulation metal oxide field effect transistor with single gate structure Grant 5,105,243 - Nakagawa , et al. April 14, 1 | 1992-04-14 |
Conductivity modulated MOSFET Grant 5,093,701 - Nakagawa , et al. * March 3, 1 | 1992-03-03 |
Planar semiconductor device having high breakdown voltage Grant 5,086,332 - Nakagawa , et al. February 4, 1 | 1992-02-04 |
Conductivity modulated MOSFET Grant 5,086,323 - Nakagawa , et al. February 4, 1 | 1992-02-04 |
Lateral conductivity modulated MOSFET Grant 5,068,700 - Yamaguchi , et al. November 26, 1 | 1991-11-26 |
Conductivity-modulation metal oxide semiconductor field effect transistor Grant 4,980,743 - Nakagawa , et al. December 25, 1 | 1990-12-25 |
Conductive modulated MOSFET Grant 4,881,120 - Nakagawa , et al. * November 14, 1 | 1989-11-14 |
Dielectrically isolated semiconductor substrate Grant 4,878,957 - Yamaguchi , et al. November 7, 1 | 1989-11-07 |
Conductivity modulated MOS transistor device Grant RE32,784 - Nakagawa , et al. November 15, 1 | 1988-11-15 |
Lateral conductivity modulated MOSFET Grant 4,782,372 - Nakagawa , et al. November 1, 1 | 1988-11-01 |
Conductivity modulated MOS transistor device Grant 4,680,604 - Nakagawa , et al. July 14, 1 | 1987-07-14 |
Conductivity modulated MOSFET Grant 4,672,407 - Nakagawa , et al. June 9, 1 | 1987-06-09 |
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