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name:-0.0096051692962646
name:-0.022362232208252
name:-0.00043392181396484
WATANABE; Kiminori Patent Filings

WATANABE; Kiminori

Patent Applications and Registrations

Patent applications and USPTO patent grants for WATANABE; Kiminori.The latest application filed is for "electrostatic protection device and light-emitting module".

Company Profile
0.20.7
  • WATANABE; Kiminori - Tokyo JP
  • Watanabe; Kiminori - Kanagawa-ken JP
  • Watanabe; Kiminori - Kawasaki-shi JP
  • Watanabe; Kiminori - Kawasaki JP
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Electrostatic Protection Device And Light-emitting Module
App 20160079218 - WATANABE; Kiminori ;   et al.
2016-03-17
Semiconductor Device
App 20120139005 - IKIMURA; Takehito ;   et al.
2012-06-07
Semiconductor device having a vertical transistor structure
App 20080029809 - Morioka; Jun ;   et al.
2008-02-07
Semiconductor Device
App 20070108518 - ENDO; Koichi ;   et al.
2007-05-17
Lateral high-breakdown-voltage transistor having drain contact region
Grant 6,989,568 - Watanabe , et al. January 24, 2
2006-01-24
Lateral high-breakdown-voltage transistor
App 20040150041 - Watanabe, Kiminori ;   et al.
2004-08-05
Lateral high-breakdown-voltage transistor
Grant 6,707,104 - Watanabe , et al. March 16, 2
2004-03-16
Lateral high-breakdown-voltage transistor
App 20030038307 - Watanabe, Kiminori ;   et al.
2003-02-27
Lateral high-breakdown-voltage transistor
Grant 6,489,653 - Watanabe , et al. December 3, 2
2002-12-03
Lateral high-breakdown-voltage transistor
App 20010015459 - Watanabe, Kiminori ;   et al.
2001-08-23
Conductivity modulated MOSFET
Grant 6,025,622 - Nakagawa , et al. February 15, 2
2000-02-15
Method of operating thyristor with insulated gates
Grant 5,463,231 - Ogura , et al. October 31, 1
1995-10-31
Conductivity-modulation metal oxide field effect transistor with single gate structure
Grant 5,237,186 - Nakagawa , et al. August 17, 1
1993-08-17
Conductivity-modulation metal oxide semiconductor field effect transistor
Grant 5,168,333 - Nakagawa , et al. December 1, 1
1992-12-01
Conductivity-modulation metal oxide semiconductor field effect transistor
Grant 5,124,773 - Nakagawa , et al. June 23, 1
1992-06-23
Conductivity-modulation metal oxide field effect transistor with single gate structure
Grant 5,105,243 - Nakagawa , et al. April 14, 1
1992-04-14
Conductivity modulated MOSFET
Grant 5,093,701 - Nakagawa , et al. * March 3, 1
1992-03-03
Planar semiconductor device having high breakdown voltage
Grant 5,086,332 - Nakagawa , et al. February 4, 1
1992-02-04
Conductivity modulated MOSFET
Grant 5,086,323 - Nakagawa , et al. February 4, 1
1992-02-04
Lateral conductivity modulated MOSFET
Grant 5,068,700 - Yamaguchi , et al. November 26, 1
1991-11-26
Conductivity-modulation metal oxide semiconductor field effect transistor
Grant 4,980,743 - Nakagawa , et al. December 25, 1
1990-12-25
Conductive modulated MOSFET
Grant 4,881,120 - Nakagawa , et al. * November 14, 1
1989-11-14
Dielectrically isolated semiconductor substrate
Grant 4,878,957 - Yamaguchi , et al. November 7, 1
1989-11-07
Conductivity modulated MOS transistor device
Grant RE32,784 - Nakagawa , et al. November 15, 1
1988-11-15
Lateral conductivity modulated MOSFET
Grant 4,782,372 - Nakagawa , et al. November 1, 1
1988-11-01
Conductivity modulated MOS transistor device
Grant 4,680,604 - Nakagawa , et al. July 14, 1
1987-07-14
Conductivity modulated MOSFET
Grant 4,672,407 - Nakagawa , et al. June 9, 1
1987-06-09

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