Watanabe; Hitomi
Patent Applications and Registrations
Patent applications and USPTO patent grants for Watanabe; Hitomi.The latest application filed is for "novel 2-pyridinecarboxamide derivatives".
- Watanabe; Hitomi - Tokyo JP
- Watanabe; Hitomi - Ibaraki JP
- WATANABE; HITOMI - Tsukuba-shi JP
- Watanabe; Hitomi - Tsukuba JP
- Watanabe; Hitomi - Chiba JP
- Watanabe, Hitomi - Chiba-shi JP
| Patent | Date |
|---|---|
| Portion of a display panel or screen with a graphical user interface Grant D918,256 - Asai , et al. May 4, 2 | 2021-05-04 |
| 2-pyridinecarboxamide derivatives Grant 8,765,789 - Mitsuya , et al. July 1, 2 | 2014-07-01 |
| Novel 2-pyridinecarboxamide Derivatives App 20130085156 - MITSUYA; MORIHIRO ; et al. | 2013-04-04 |
| 2-pyridinecarboxamide derivatives Grant 8,344,003 - Mitsuya , et al. January 1, 2 | 2013-01-01 |
| Spirochromanon derivatives Grant 8,138,197 - Iino , et al. March 20, 2 | 2012-03-20 |
| Benzodiazepin-2-on Derivatives App 20110319396 - Asai; Masanori ; et al. | 2011-12-29 |
| Azepinone Derivatives App 20110212891 - Okamoto; Osamu ; et al. | 2011-09-01 |
| Novel 2-pyridinecarboxamide Derivatives App 20100041660 - MITSUYA; MORIHIRO ; et al. | 2010-02-18 |
| 2-pyridine carboxamide derivatives Grant 7,629,362 - Mitsuya , et al. December 8, 2 | 2009-12-08 |
| Spirochromanon Derivatives App 20090270436 - Iino; Tomoharu ; et al. | 2009-10-29 |
| Semiconductor device with dual gate oxides Grant 7,259,071 - Kim , et al. August 21, 2 | 2007-08-21 |
| Shallow trench isolation Grant 7,241,665 - Kim , et al. July 10, 2 | 2007-07-10 |
| Semiconductor integrated circuit device having MOS transistor Grant 7,161,198 - Omi , et al. January 9, 2 | 2007-01-09 |
| Shallow trench isolation App 20060258116 - Kim; Inki ; et al. | 2006-11-16 |
| Novel 2-pyridinecarboxamide derivatives App 20060258701 - Mitsuya; Morihiro ; et al. | 2006-11-16 |
| Shallow trench isolation Grant 7,091,104 - Kim , et al. August 15, 2 | 2006-08-15 |
| Manufacturing method for a semiconductor device Grant 7,056,836 - Watanabe June 6, 2 | 2006-06-06 |
| Semiconductor device with dual gate oxides App 20050059215 - Kim, Inki ; et al. | 2005-03-17 |
| Semiconductor device with dual gate oxides Grant 6,818,514 - Kim , et al. November 16, 2 | 2004-11-16 |
| Semiconductor device with dual gate oxides App 20040166698 - Kim, Inki ; et al. | 2004-08-26 |
| Shallow trench isolation App 20040147090 - Kim, Inki ; et al. | 2004-07-29 |
| Method for manufacturing semiconductor device Grant 6,680,244 - Watanabe January 20, 2 | 2004-01-20 |
| Method of manufacturing a semiconductor device having nitrogen ions by twice RTA processes Grant 6,656,780 - Watanabe December 2, 2 | 2003-12-02 |
| EEPROM cell having reduced cell area Grant 6,573,557 - Watanabe June 3, 2 | 2003-06-03 |
| Semiconductor device and manufacturing method therefor App 20030049907 - Omi, Toshihiko ; et al. | 2003-03-13 |
| Method of producing semiconductor having two-layer polycrystalline silicon structure Grant 6,420,222 - Watanabe July 16, 2 | 2002-07-16 |
| Method of manufacturing a semiconductor device App 20020039816 - Watanabe, Hitomi | 2002-04-04 |
| Method for manufacturing semiconductor device App 20010034098 - Watanabe, Hitomi | 2001-10-25 |
| Semiconductor device having defects of deep level generated by electron beam irradiation in a semiconductor substrate Grant 5,672,906 - Saito , et al. September 30, 1 | 1997-09-30 |
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