Wasserbauer; John

Patent Applications and Registrations

Patent applications and USPTO patent grants for Wasserbauer; John.The latest application filed is for "quantum well structure for polarized semiconductors".

Company Profile

5.14.15

Wasserbauer; John - Castro Valley CA
WASSERBAUER; John - Walnut Creek CA
Wasserbauer; John - San Leandro CA
Wasserbauer; John - Erie CO
Wasserbauer, John - Boulder CO

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Quantum Well Structure for Polarized Semiconductors App 20210203134 - Wasserbauer; John	2021-07-01
Light Based Therapy Devices And Methods App 20210023389 - WASSERBAUER; John ; et al.	2021-01-28
Light based therapy devices and methods Grant 10,773,097 - Wasserbauer , et al. Sept	2020-09-15
Light Based Therapy Devices And Methods App 20200222715 - WASSERBAUER; John ; et al.	2020-07-16
Light based therapy devices and methods Grant 10,525,278 - Wasserbauer , et al. J	2020-01-07
Light Based Therapy Devices And Methods App 20190054311 - WASSERBAUER; John ; et al.	2019-02-21
Mode Size Converters And Optical Assemblies App 20160062039 - Zhang; Haipeng ; et al.	2016-03-03
Multi-Fiber Optical Connector with Integrated Dust Shield App 20160041344 - Wasserbauer; John	2016-02-11
Method for manufacturing semiconductor devices having gallium nitride epilayers on diamond substrates using intermediate nucleating layer Grant 8,945,966 - Francis , et al. February 3, 2	2015-02-03
Method For Manufacturing Semiconductor Devices Having Gallium Nitride Epilayers On Diamond Substrates Using Intermediate Nucleating Layer App 20130183798 - Francis; Daniel ; et al.	2013-07-18
Method for manufacturing semiconductor devices having gallium nitride epilayers on diamond substrates Grant 8,283,189 - Francis , et al. October 9, 2	2012-10-09
Semiconductor devices having gallium nitride epilayers on diamond substrates Grant 8,283,672 - Francis , et al. October 9, 2	2012-10-09
Composite wafers having bulk-quality semiconductor layers and method of manufacturing thereof Grant 7,943,485 - Francis , et al. May 17, 2	2011-05-17
Method For Manufacturing Semiconductor Devices Having Gallium Nitride Epilayers On Diamond Substrates App 20100105166 - Francis; Daniel ; et al.	2010-04-29
Semiconductor Devices Having Gallium Nitride Epilayers On Diamond Substrates App 20100001293 - Francis; Daniel ; et al.	2010-01-07
Semiconductor devices having gallium nitride epilayers on diamond substrates Grant 7,595,507 - Francis , et al. September 29, 2	2009-09-29
Composite Wafers Having Bulk-quality Semiconductor Layers And Method Of Manufacturing Thereof App 20080296586 - Francis; Daniel ; et al.	2008-12-04
Semiconductor Devices Having Gallium Nitride Epilayers on Diamond Substrates App 20060266280 - Francis; Daniel ; et al.	2006-11-30
Method and apparatus for performing whole wafer burn-in Grant 7,138,284 - Wasserbauer , et al. November 21, 2	2006-11-21
Mirror structure for reducing the effect of feedback on a VCSEL App 20050100063 - Wasserbauer, John ; et al.	2005-05-12
Mirror structure for reducing the effect of feedback on a VCSEL Grant 6,882,673 - Wasserbauer , et al. April 19, 2	2005-04-19
Temperature insensitive VCSEL Grant 6,879,612 - Wasserbauer April 12, 2	2005-04-12
Method and apparatus for performing whole wafer burn-in App 20050026311 - Wasserbauer, John ; et al.	2005-02-03
Method and apparatus for performing whole wafer burn-in Grant 6,830,940 - Wasserbauer , et al. December 14, 2	2004-12-14
Low thermal impedance DBR for optoelectronic devices Grant 6,720,585 - Wasserbauer , et al. April 13, 2	2004-04-13
Hybrid vertical cavity laser with buried interface Grant 6,618,414 - Wasserbauer , et al. September 9, 2	2003-09-09
Closely-spaced VCSEL and photodetector for applications requiring their independent operation App 20020056852 - Scott, Jeffrey W. ; et al.	2002-05-16

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