WASHINGTON; Lori

Patent Applications and Registrations

Patent applications and USPTO patent grants for WASHINGTON; Lori.The latest application filed is for "multi-thermal cvd chambers with shared gas delivery and exhaust system".

Company Profile

0.7.17

WASHINGTON; Lori - Union City CA
WASHINGTON; Lori - Sunnyvale CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Multi-thermal Cvd Chambers With Shared Gas Delivery And Exhaust System App 20210324514 - YE; Zhiyuan ; et al.	2021-10-21
Method And System For Mocvd Effluent Abatement App 20210260525 - HE; Gang ; et al.	2021-08-26
Structure & Material Engineering Methods For Optoelectronic Devices Signal To Noise Ratio Enhancement App 20210265416 - CHEN; Papo ; et al.	2021-08-26
Methods for forming a transistor and modulating channel stress Grant 8,105,908 - Thirupapuliyur , et al. January 31, 2	2012-01-31
Epitaxial Growth Of Compound Nitride Semiconductor Structures App 20110070721 - NIJHAWAN; Sandeep ; et al.	2011-03-24
System and method for depositing a gaseous mixture onto a substrate surface using a showerhead apparatus Grant 7,674,352 - Bour , et al. March 9, 2	2010-03-09
Stacked-substrate processes for production of nitride semiconductor structures Grant 7,575,982 - Bour , et al. August 18, 2	2009-08-18
Dislocation-specific lateral epitaxial overgrowth to reduce dislocation density of nitride films Grant 7,560,364 - Bour , et al. July 14, 2	2009-07-14
Radial temperature control for lattice-mismatched epitaxy Grant 7,534,714 - Washington , et al. May 19, 2	2009-05-19
Dual-side epitaxy processes for production of nitride semiconductor structures Grant 7,470,599 - Nijhawan , et al. December 30, 2	2008-12-30
Dislocation-specific dielectric mask deposition and lateral epitaxial overgrowth to reduce dislocation density of nitride films Grant 7,459,380 - Bour , et al. December 2, 2	2008-12-02
System And Method For Depositing A Gaseous Mixture Onto A Substrate Surface Using A Showerhead Apparatus App 20080124463 - Bour; David ; et al.	2008-05-29
UV activation of NH3 for III-N deposition App 20070256635 - Bour; David ; et al.	2007-11-08
Radial temperature control for lattice-mismatched epitaxy App 20070259535 - Washington; Lori ; et al.	2007-11-08
Dislocation-specific dielectric mask deposition and lateral epitaxial overgrowth to reduce dislocation density of nitride films App 20070259464 - Bour; David ; et al.	2007-11-08
Dislocation-specific lateral epitaxial overgrowth to reduce dislocation density of nitride films App 20070259504 - Bour; David ; et al.	2007-11-08
MOCVD reactor with concentration-monitor feedback App 20070254093 - Nijhawan; Sandeep ; et al.	2007-11-01
MOCVD reactor without metalorganic-source temperature control App 20070254100 - Nijhawan; Sandeep ; et al.	2007-11-01
Epitaxial growth of compound nitride semiconductor structures App 20070240631 - Nijhawan; Sandeep ; et al.	2007-10-18
Double-sided nitride structures App 20070241351 - Nijhawan; Sandeep ; et al.	2007-10-18
Stacked-substrate processes for production of nitride semiconductor structures App 20070243652 - Bour; David ; et al.	2007-10-18
Dual-side epitaxy processes for production of nitride semiconductor structures App 20070243702 - Nijhawan; Sandeep ; et al.	2007-10-18
Methods for forming a transistor and creating channel stress App 20060289900 - Thirupapuliyur; Sunderraj ; et al.	2006-12-28

uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.

While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.

All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.