Ward; Beth A.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Ward; Beth A..The latest application filed is for "method for fabricating a nitrided silicon-oxide gate dielectric".

Company Profile

0.10.9

Ward; Beth A. - Essex Junction VT

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method for fabricating a nitrided silicon-oxide gate dielectric Grant 8,709,887 - Burnham , et al. April 29, 2	2014-04-29
CMOS transistor with a polysilicon gate electrode having varying grain size Grant 7,714,366 - Ballantine , et al. May 11, 2	2010-05-11
Method For Fabricating A Nitrided Silicon-oxide Gate Dielectric App 20080014692 - Burnham; Jay S. ; et al.	2008-01-17
Method for fabricating a nitrided silicon-oxide gate dielectric Grant 7,291,568 - Burnham , et al. November 6, 2	2007-11-06
Nitrided ultra thin gate dielectrics Grant 7,109,559 - Khare , et al. September 19, 2	2006-09-19
Thermal nitrogen distribution method to improve uniformity of highly doped ultra-thin gate capacitors Grant 6,909,157 - Burnham , et al. June 21, 2	2005-06-21
Cmos Transistor With A Polysilicon Gate Electrode Having Varying Grain Size App 20050110096 - Ballantine, Arne W. ; et al.	2005-05-26
Method of reducing polysilicon depletion in a polysilicon gate electrode by depositing polysilicon of varying grain size Grant 6,893,948 - Ballantine , et al. May 17, 2	2005-05-17
Method for improved plasma nitridation of ultra thin gate dielectrics Grant 6,893,979 - Khare , et al. May 17, 2	2005-05-17
Nitrided ultrathin gate dielectrics App 20050087822 - Khare, Mukesh V. ; et al.	2005-04-28
Method For Fabricating A Nitrided Silicon-oxide Gate Dielectric App 20050048705 - Burnham, Jay S. ; et al.	2005-03-03
Thermal nitrogen distribution method to improve uniformity of highly doped ultra-thin gate capacitors App 20050040480 - Burnham, Jay S. ; et al.	2005-02-24
Thermal nitrogen distribution method to improve uniformity of highly doped ultra-thin gate capacitors Grant 6,706,644 - Burnham , et al. March 16, 2	2004-03-16
Method of reducing polysilicon depletion in a polysilicon gate electrode by depositing polysilicon of varying grain size App 20040023476 - Ballantine, Arne W. ; et al.	2004-02-05
Thermal Nitrogen Distribution Method To Improve Uniformity Of Highly Doped Ultra-thin Gate Capacitors App 20040018688 - Burnham, Jay S. ; et al.	2004-01-29
Method of reducing polysilicon depletion in a polysilicon gate electrode by depositing polysilicon of varying grain size Grant 6,670,263 - Ballantine , et al. December 30, 2	2003-12-30
Method of reducing polysilicon depletion in a polysilicon gate electrode by depositing polysilicon of varying grain size App 20020149064 - Ballantine, Arne W. ; et al.	2002-10-17
Method for improved plasma nitridation of ultra thin gate dielectrics App 20020130377 - Khare, Mukesh V. ; et al.	2002-09-19

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