loadpatents
name:-0.018637895584106
name:-0.010968923568726
name:-0.0027511119842529
Wang; Yunyu Patent Filings

Wang; Yunyu

Patent Applications and Registrations

Patent applications and USPTO patent grants for Wang; Yunyu.The latest application filed is for "using aluminum as etch stop layer".

Company Profile
1.12.18
  • Wang; Yunyu - San Jose CA
  • WANG; Yunyu - Shenzhen CN
  • Wang; Yunyu - Santa Clara CA US
  • Wang; Yunyu - Austin TX
  • Wang, Yunyu - Poughquag NY
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Using Aluminum As Etch Stop Layer
App 20210151671 - Narayanan; Sundar ;   et al.
2021-05-20
Using aluminum as etch stop layer
Grant 10,873,023 - Narayanan , et al. December 22, 2
2020-12-22
Differential silicon oxide etch
Grant 9,887,096 - Park , et al. February 6, 2
2018-02-06
Using Aluminum As Etch Stop Layer
App 20170288139 - Narayanan; Sundar ;   et al.
2017-10-05
Dry-etch for silicon-and-carbon-containing films
Grant 9,236,266 - Zhang , et al. January 12, 2
2016-01-12
Differential Silicon Oxide Etch
App 20150249018 - Park; Seung H. ;   et al.
2015-09-03
Method, Apparatus And System For Selecting A User
App 20150154187 - YANG; Shangdi ;   et al.
2015-06-04
Differential silicon oxide etch
Grant 9,034,770 - Park , et al. May 19, 2
2015-05-19
Dry-etch For Silicon-and-carbon-containing Films
App 20140273491 - Zhang; Jingchun ;   et al.
2014-09-18
Dry-etch for silicon-and-carbon-containing films
Grant 8,771,536 - Zhang , et al. July 8, 2
2014-07-08
Selective suppression of dry-etch rate of materials containing both silicon and nitrogen
Grant 8,679,983 - Wang , et al. March 25, 2
2014-03-25
Selective suppression of dry-etch rate of materials containing both silicon and oxygen
Grant 8,679,982 - Wang , et al. March 25, 2
2014-03-25
Differential Silicon Oxide Etch
App 20140080309 - Park; Seung H. ;   et al.
2014-03-20
Dry-etch for silicon-and-nitrogen-containing films
Grant 8,642,481 - Wang , et al. February 4, 2
2014-02-04
Selective suppression of dry-etch rate of materials containing both silicon and nitrogen
Grant 8,541,312 - Wang , et al. September 24, 2
2013-09-24
Selective Suppression Of Dry-etch Rate Of Materials Containing Both Silicon And Nitrogen
App 20130130506 - Wang; Yunyu ;   et al.
2013-05-23
Dry-etch For Silicon-and-nitrogen-containing Films
App 20130130507 - Wang; Yunyu ;   et al.
2013-05-23
Selective Suppression Of Dry-etch Rate Of Materials Containing Both Silicon And Nitrogen
App 20130059440 - Wang; Yunyu ;   et al.
2013-03-07
Selective Suppression Of Dry-etch Rate Of Materials Containing Both Silicon And Oxygen
App 20130052827 - Wang; Yunyu ;   et al.
2013-02-28
Dry-etch For Silicon-and-nitrogen-containing Films
App 20130045605 - Wang; Yunyu ;   et al.
2013-02-21
Dry-etch For Silicon-and-carbon-containing Films
App 20130034968 - Zhang; Jingchun ;   et al.
2013-02-07
Assisted selective growth of highly dense and vertically aligned carbon nanotubes
App 20100117764 - Wang; Yunyu ;   et al.
2010-05-13
Method for forming a (111) oriented BSTO thin film layer for high dielectric constant capacitors
App 20050196917 - Lian, Jingyu ;   et al.
2005-09-08

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