Wang; Larry

Patent Applications and Registrations

Patent applications and USPTO patent grants for Wang; Larry.The latest application filed is for "battery accommodating device, battery system, and method for accessing the interior of battery system".

Company Profile

2.18.5

Wang; Larry - Jiangsu CN
WANG; Larry - Zanjing CN
Wang; Larry - San Jose CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Battery accommodating device, battery system, and method for accessing the interior of battery system Grant 11,133,556 - Gao , et al. September 28, 2	2021-09-28
Battery Accommodating Device, Battery System, And Method For Accessing The Interior Of Battery System App 20200365846 - GAO; Fei ; et al.	2020-11-19
User data management across multiple apps on a user device Grant 10,656,976 - Aggarwal , et al.	2020-05-19
Gate oxide breakdown in OTP memory cells for physical unclonable function (PUF) security Grant 10,623,192 - Wang	2020-04-14
User Data Management Across Multiple Apps On A User Device App 20190324824 - Aggarwal; Vijeyta ; et al.	2019-10-24
Gate Oxide Breakdown in OTP Memory Cells for Physical Unclonable Function (PUF) Security App 20190068383 - Wang; Larry	2019-02-28
User data management across multiple apps on a user device Grant 10,191,785 - Aggarwal , et al. Ja	2019-01-29
OTP cell with improved programmability Grant 10,163,520 - Jian , et al. Dec	2018-12-25
Three-transistor OTP memory cell Grant 10,032,522 - Luan , et al. July 24, 2	2018-07-24
User Data Management Across Multiple Apps On A User Device App 20180004580 - Aggarwal; Vijeyta ; et al.	2018-01-04
Three-Transistor OTP Memory Cell App 20170358368 - Luan; Harry ; et al.	2017-12-14
Dynamic trim method for non-volatile memory products Grant 8,630,137 - He , et al. January 14, 2	2014-01-14
Method of removing a sacrificial emitter feature in a BICMOS process with a super self-aligned BJT Grant 6,962,842 - Kalnitsky , et al. November 8, 2	2005-11-08
Shallow trench isolation formation with ion implantation Grant 6,599,810 - Kepler , et al. July 29, 2	2003-07-29
Stepper alignment mark structure for maintaining alignment integrity Grant 6,239,031 - Kepler , et al. May 29, 2	2001-05-29
Formation of junctions by diffusion from a doped amorphous silicon film during silicidation Grant 6,169,005 - Kepler , et al. January 2, 2	2001-01-02
Shallow junction formation by out-diffusion from a doped dielectric layer through a salicide layer Grant 6,150,243 - Wieczorek , et al. November 21, 2	2000-11-21
Silicidation with silicon buffer layer and silicon spacers Grant 6,100,145 - Kepler , et al. August 8, 2	2000-08-08
Formation of junctions by diffusion from a doped film into and through a silicide during silicidation Grant 6,096,599 - Kepler , et al. August 1, 2	2000-08-01
Shallow trench isolation formation with trench wall spacer Grant 6,074,927 - Kepler , et al. June 13, 2	2000-06-13
Stepper alignment mark structure for maintaining alignment integrity Grant 6,037,671 - Kepler , et al. March 14, 2	2000-03-14
Shallow trench isolation formation with reduced polish stop thickness Grant 5,930,645 - Lyons , et al. July 27, 1	1999-07-27

Company Registrations

SEC

0001356565

Wang Larry

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