Wang; Judy

Patent Applications and Registrations

Patent applications and USPTO patent grants for Wang; Judy.The latest application filed is for "wastegate valve assembly with biasing members".

Company Profile

2.7.9

Wang; Judy - Shanghai CN
Wang; Judy - Cupertino CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Wastegate valve assembly with biasing members Grant 10,570,815 - Gong , et al. Feb	2020-02-25
Wastegate Valve Assembly With Biasing Members App 20190120129 - Gong; John ; et al.	2019-04-25
Plasma etching carbonaceous layers with sulfur-based etchants Grant 8,133,819 - Wang , et al. March 13, 2	2012-03-13
Etch process with controlled critical dimension shrink Grant 7,838,432 - Wang , et al. November 23, 2	2010-11-23
Halogen-free amorphous carbon mask etch having high selectivity to photoresist Grant 7,807,064 - Kim , et al. October 5, 2	2010-10-05
Plasma Etching Carbonaceous Layers With Sulfur-based Etchants App 20090212010 - Wang; Judy ; et al.	2009-08-27
Dielectric plasma etch process with in-situ amorphous carbon mask with improved critical dimension and etch selectivity Grant 7,510,976 - Sung , et al. March 31, 2	2009-03-31
Method For Etching Using Advanced Patterning Film In Capacitive Coupling High Frequency Plasma Dielectric Etch Chamber App 20090023294 - WANG; JUDY ; et al.	2009-01-22
Process to open carbon based hardmask overlying a dielectric layer App 20080286977 - Wang; Judy ; et al.	2008-11-20
Etch Process With Controlled Critical Dimension Shrink App 20080254638 - Wang; Judy ; et al.	2008-10-16
Process to open carbon based hardmask Grant 7,432,210 - Wang , et al. October 7, 2	2008-10-07
Halogen-free Amorphous Carbon Mask Etch Having High Selectivity To Photoresist App 20080230511 - Kim; Jong Mun ; et al.	2008-09-25
Methods For Etching High Aspect Ratio Features App 20080203056 - WANG; JUDY ; et al.	2008-08-28
Dielectric plasma etch process with in-situ amorphous carbon mask with improved critical dimension and etch selectivity App 20070249171 - Sung; Shing-Li ; et al.	2007-10-25
Process to open carbon based hardmask App 20070077780 - Wang; Judy ; et al.	2007-04-05
Etch method using a dielectric etch chamber with expanded process window Grant 6,403,491 - Liu , et al. June 11, 2	2002-06-11

uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.

While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.

All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.