Wang; Huan-Wen
Patent Applications and Registrations
Patent applications and USPTO patent grants for Wang; Huan-Wen.The latest application filed is for "amorphizing ion implant method for forming polysilicon emitter bipolar transistor".
- Wang; Huan-Wen - Hsin-Chu TW
- Wang, Huan-Wen - Hsin Chu City TW
- Wang; Huan Wen - Chung-li TW
| Patent | Date |
|---|---|
| Amorphizing ion implant method for forming polysilicon emitter bipolar transistor Grant 7,045,876 - An , et al. May 16, 2 | 2006-05-16 |
| Amorphizing ion implant method for forming polysilicon emitter bipolar transistor App 20050074942 - An, Feng-Yuan ; et al. | 2005-04-07 |
| Amorphizing ion implant method for forming polysilicon emitter bipolar transistor Grant 6,740,563 - An , et al. May 25, 2 | 2004-05-25 |
| Polysilicon structures with different resistance values for gate electrodes, resistors, and capacitor plates Grant 6,627,971 - Shen , et al. September 30, 2 | 2003-09-30 |
| Implant method for forming Si3N4 spacer Grant 6,624,466 - Chen , et al. September 23, 2 | 2003-09-23 |
| Implant method for forming Si3N4 spacer App 20020110972 - Chen, Sen-Fu ; et al. | 2002-08-15 |
| Implant method for forming Si3N4 spacer Grant 6,380,030 - Chen , et al. April 30, 2 | 2002-04-30 |
| Prevention of corrosion of aluminum interconnects by removing corrosion-inducing species Grant 5,700,740 - Chen , et al. December 23, 1 | 1997-12-23 |
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