Patent | Date |
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Field-stop reverse conducting insulated gate bipolar transistor and manufacturing method therefor Grant 10,096,699 - Zhang , et al. October 9, 2 | 2018-10-09 |
Insulated gate bipolar transistor and manufacturing method therefor Grant 10,084,036 - Zhong , et al. September 25, 2 | 2018-09-25 |
Insulated gate bipolar transistor and manufacturing method therefor Grant 9,954,074 - Zhong , et al. April 24, 2 | 2018-04-24 |
Insulated Gate Bipolar Transistor And Manufacturing Method Therefor App 20180102406 - ZHONG; Shengrong ;   et al. | 2018-04-12 |
Insulated gate bipolar transistor and manufacturing method therefor Grant 9,881,994 - Zhong , et al. January 30, 2 | 2018-01-30 |
Manufacturing method for reverse conducting insulated gate bipolar transistor Grant 9,673,193 - Zhang , et al. June 6, 2 | 2017-06-06 |
Reverse conduction insulated gate bipolar transistor (IGBT) manufacturing method Grant 9,666,682 - Wang , et al. May 30, 2 | 2017-05-30 |
IGBT manufacturing method Grant 9,620,615 - Deng , et al. April 11, 2 | 2017-04-11 |
Method for removing polysilicon protection layer on a back face of an IGBT having a field stop structure Grant 9,607,851 - Rui , et al. March 28, 2 | 2017-03-28 |
IGBT with built-in diode and manufacturing method therefor Grant 9,595,520 - Deng , et al. March 14, 2 | 2017-03-14 |
Method for manufacturing insulated gate bipolar transistor Grant 9,590,029 - Zhong , et al. March 7, 2 | 2017-03-07 |
Method for manufacturing injection-enhanced insulated-gate bipolar transistor Grant 9,583,587 - Wang , et al. February 28, 2 | 2017-02-28 |
Method for manufacturing IGBT Grant 9,553,164 - Huang , et al. January 24, 2 | 2017-01-24 |
Method For Manufacturing Insulated Gate Bipolar Transistor App 20160380048 - Zhong; Shengrong ;   et al. | 2016-12-29 |
Igbt Manufacturing Method App 20160380071 - DENG; Xiaoshe ;   et al. | 2016-12-29 |
Insulated Gate Bipolar Transistor And Manufacturing Method Therefor App 20160380072 - ZHONG; Shengrong ;   et al. | 2016-12-29 |
Manufacturing Method For Reverse Conducting Insulated Gate Bipolar Transistor App 20160379974 - ZHANG; Shuo ;   et al. | 2016-12-29 |
Reverse Conduction Insulated Gate Bipolar Transistor (igbt) Manufacturing Method App 20160372571 - Wang; Wanli ;   et al. | 2016-12-22 |
Method For Manufacturing Igbt App 20160372570 - Huang; Xuan ;   et al. | 2016-12-22 |
Method For Manufacturing Injection-enhanced Insulated-gate Bipolar Transistor App 20160372573 - Wang; Wanli ;   et al. | 2016-12-22 |
Preparation method for power diode Grant 9,502,534 - Zhong , et al. November 22, 2 | 2016-11-22 |
Method for preparing power diode Grant 9,502,497 - Wang , et al. November 22, 2 | 2016-11-22 |
Insulated Gate Bipolar Transistor And Manufacturing Method Therefor App 20160307995 - Zhong; Shengrong ;   et al. | 2016-10-20 |
Preparation Method For Power Diode App 20160308029 - Zhong; Shengrong ;   et al. | 2016-10-20 |
Method For Preparing Power Diode App 20160307994 - Wang; Genyi ;   et al. | 2016-10-20 |
Field-stop reverse conducting insulated gate bipolar transistor and manufacturing method therefor Grant 9,443,926 - Zhang , et al. September 13, 2 | 2016-09-13 |
Field-stop Reverse Conducting Insulated Gate Bipolar Transistor And Manufacturing Method Therefor App 20160240608 - ZHANG; Shuo ;   et al. | 2016-08-18 |
Igbt With Built-in Diode And Manufacturing Method Therefor App 20160240528 - DENG; Xiaoshe ;   et al. | 2016-08-18 |
Field-stop Reverse Conducting Insulated Gate Bipolar Transistor And Manufacturing Method Therefor App 20160163841 - ZHANG; Shuo ;   et al. | 2016-06-09 |
Method For Removing A Polysilicon Protection Layer On A Back Face Of An Igbt Having A Field Stop Structure App 20150155182 - Rui; Qiang ;   et al. | 2015-06-04 |
Method for manufacturing deep-trench super PN junctions Grant 8,927,386 - Wu , et al. January 6, 2 | 2015-01-06 |
Method For Manufacturing Deep-trench Super Pn Junctions App 20130196489 - Wu; Tzong Shiann ;   et al. | 2013-08-01 |