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Fabrication of field-effect transistor with reduced junction capacitance and threshold voltage of magnitude that decreases with increasing channel length Grant 7,879,669 - Teng , et al. February 1, 2 | 2011-02-01 |
Signal Processing Apparatus for Multi-mode Satellite Positioning System and Method Thereof App 20100302100 - YANG; CHAO-TUNG ;   et al. | 2010-12-02 |
Fabrication of complementary field-effect transistors with vertical body-material dopant profiles tailored to alleviate punchthrough and reduce current leakage Grant 7,785,971 - Bulucea , et al. August 31, 2 | 2010-08-31 |
Mechatronic suspension system and method for shock absorbing thereof App 20100148463 - Wang; Fu-cheng ;   et al. | 2010-06-17 |
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Semiconductor structure in which like-polarity insulated-gate field-effect transistors have multiple vertical body dopant concentration maxima and different halo pocket characteristics Grant 7,701,005 - Bulucea , et al. April 20, 2 | 2010-04-20 |
Fabrication of like-polarity insulated-gate field-effect transistors having multiple vertical body dopant concentration maxima and different halo pocket characteristics Grant 7,595,244 - Bulucea , et al. September 29, 2 | 2009-09-29 |
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Field-effect transistor for alleviating short-channel effects Grant 6,548,842 - Bulucea , et al. April 15, 2 | 2003-04-15 |
Semiconductor trench isolation process that utilizes smoothening layer Grant 6,461,932 - Wang October 8, 2 | 2002-10-08 |
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