| Patent | Date |
|---|
Plasma-enhanced CVD process using TEOS for depositing silicon oxide
Grant 5,362,526 - Wang , et al. * November 8, 1 | 1994-11-08 |
Two step process for forming void-free oxide layer over stepped surface of semiconductor wafer
Grant 5,314,845 - Lee , et al. May 24, 1 | 1994-05-24 |
Multichamber integrated process system
Grant 5,292,393 - Maydan , et al. * March 8, 1 | 1994-03-08 |
Method for planarizing an integrated circuit structure using low melting inorganic material and flowing while depositing
Grant 5,244,841 - Marks , et al. * September 14, 1 | 1993-09-14 |
Materials and methods for etching silicides, polycrystalline silicon and polycides
Grant 5,219,485 - Wang , et al. June 15, 1 | 1993-06-15 |
Magnetic field-enhanced plasma etch reactor
Grant 5,215,619 - Cheng , et al. June 1, 1 | 1993-06-01 |
Apparatus for removing deposits from backside and end edge of semiconductor wafer while preventing removal of materials from front surface of wafer
Grant 5,213,650 - Wang , et al. May 25, 1 | 1993-05-25 |
Method for planarizing an integrated circuit structure using low melting inorganic material
Grant 5,204,288 - Marks , et al. April 20, 1 | 1993-04-20 |
Materials and methods for etching silicides, polycrystalline silicon and polycides
Grant 5,112,435 - Wang , et al. * May 12, 1 | 1992-05-12 |
Method for planarizing an integrated circuit structure using low melting inorganic material and flowing while depositing
Grant 5,112,776 - Marks , et al. * May 12, 1 | 1992-05-12 |
Process for removing deposits from backside and end edge of semiconductor wafer while preventing removal of materials from front surface of wafer
Grant 5,075,256 - Wang , et al. December 24, 1 | 1991-12-24 |
Process for selective deposition of tungsten on semiconductor wafer
Grant 5,043,299 - Chang , et al. August 27, 1 | 1991-08-27 |
Process for CVD deposition of tungsten layer on semiconductor wafer
Grant 5,028,565 - Chang , et al. July 2, 1 | 1991-07-02 |
Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
Grant 5,000,113 - Wang , et al. March 19, 1 | 1991-03-19 |
Multistep planarized chemical vapor deposition process with the use of low melting inorganic material for flowing while depositing
Grant 4,962,063 - Maydan , et al. October 9, 1 | 1990-10-09 |
Multi-chamber integrated process system
Grant 4,951,601 - Maydan , et al. August 28, 1 | 1990-08-28 |
Process for PECVD of silicon oxide using TEOS decomposition
Grant 4,892,753 - Wang , et al. January 9, 1 | 1990-01-09 |
CVD of silicon oxide using TEOS decomposition and in-situ planarization process
Grant 4,872,947 - Wang , et al. October 10, 1 | 1989-10-10 |
Magnetic field-enhanced plasma etch reactor
Grant 4,842,683 - Cheng , et al. June 27, 1 | 1989-06-27 |
Apparatus and method for magnetron-enhanced plasma-assisted chemical vapor deposition
Grant 4,668,365 - Foster , et al. May 26, 1 | 1987-05-26 |
In-situ photoresist capping process for plasma etching
Grant 4,613,400 - Tam , et al. September 23, 1 | 1986-09-23 |
Materials and methods for plasma etching of aluminum and aluminum alloys
Grant 4,412,885 - Wang , et al. November 1, 1 | 1983-11-01 |
Reactive sputter etching of polysilicon utilizing a chlorine etch gas
Grant 4,383,885 - Maydan , et al. May 17, 1 | 1983-05-17 |
Materials and methods for plasma etching of oxides and nitrides of silicon
Grant 4,376,672 - Wang , et al. March 15, 1 | 1983-03-15 |
High-selectivity plasma-assisted etching of resist-masked layer
Grant 4,333,793 - Lifshitz , et al. June 8, 1 | 1982-06-08 |
Plasma etching of silicon
Grant 4,310,380 - Flamm , et al. January 12, 1 | 1982-01-12 |
Device fabrication by plasma etching
Grant 4,256,534 - Levinstein , et al. March 17, 1 | 1981-03-17 |
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