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Patent applications and USPTO patent grants for Wan; Yuet Mei.The latest application filed is for "high stress nitride film and method for formation thereof".
Patent | Date |
---|---|
Remote plasma activated nitridation Grant 7,629,270 - Swerts , et al. December 8, 2 | 2009-12-08 |
High stress nitride film and method for formation thereof Grant 7,629,267 - Wan , et al. December 8, 2 | 2009-12-08 |
Low temperature silicon compound deposition Grant 7,294,582 - Haverkort , et al. November 13, 2 | 2007-11-13 |
High stress nitride film and method for formation thereof App 20060199357 - Wan; Yuet Mei ;   et al. | 2006-09-07 |
Method of fabricating silicon nitride nanodots Grant 7,092,287 - Beulens , et al. August 15, 2 | 2006-08-15 |
Remote plasma activated nitridation App 20060110943 - Swerts; Johan ;   et al. | 2006-05-25 |
Low temperature silicon compound deposition App 20060088985 - Haverkort; Ruben ;   et al. | 2006-04-27 |
Method of fabricating silicon nitride nanodots App 20040224534 - Beulens, Jacobus Johannes ;   et al. | 2004-11-11 |
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