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name:-0.0078670978546143
name:-0.0041439533233643
name:-0.00055694580078125
Wan; Yuet Mei Patent Filings

Wan; Yuet Mei

Patent Applications and Registrations

Patent applications and USPTO patent grants for Wan; Yuet Mei.The latest application filed is for "high stress nitride film and method for formation thereof".

Company Profile
0.4.4
  • Wan; Yuet Mei - Mount Waverley AU
  • Wan; Yuet Mei - Waverley AU
  • Wan; Yuet Mei - Leuven BE
  • Wan, Yuet Mei - Lenven BE
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Remote plasma activated nitridation
Grant 7,629,270 - Swerts , et al. December 8, 2
2009-12-08
High stress nitride film and method for formation thereof
Grant 7,629,267 - Wan , et al. December 8, 2
2009-12-08
Low temperature silicon compound deposition
Grant 7,294,582 - Haverkort , et al. November 13, 2
2007-11-13
High stress nitride film and method for formation thereof
App 20060199357 - Wan; Yuet Mei ;   et al.
2006-09-07
Method of fabricating silicon nitride nanodots
Grant 7,092,287 - Beulens , et al. August 15, 2
2006-08-15
Remote plasma activated nitridation
App 20060110943 - Swerts; Johan ;   et al.
2006-05-25
Low temperature silicon compound deposition
App 20060088985 - Haverkort; Ruben ;   et al.
2006-04-27
Method of fabricating silicon nitride nanodots
App 20040224534 - Beulens, Jacobus Johannes ;   et al.
2004-11-11

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