Waldron; Niamh

Patent Applications and Registrations

Patent applications and USPTO patent grants for Waldron; Niamh.The latest application filed is for "integration of a iii-v construction on a group iv substrate".

Company Profile

9.13.14

Waldron; Niamh - Heverlee BE
Waldron; Niamh - Leuven BE

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Cointegration of gallium nitride and silicon Grant 11,322,390 - Walke , et al. May 3, 2	2022-05-03
Integration of a III-V device on a Si substrate Grant 11,195,767 - Walke , et al. December 7, 2	2021-12-07
Integration Of A Iii-v Construction On A Group Iv Substrate App 20210358748 - Witters; Liesbeth ; et al.	2021-11-18
Process for Scaling a Gate Length App 20210151593 - Waldron; Niamh ; et al.	2021-05-20
Integrated circuit including at least one nano-ridge transistor Grant 11,004,962 - Langer , et al. May 11, 2	2021-05-11
Cointegration Of Gallium Nitride And Silicon App 20200328108 - Walke; Amey Mahadev ; et al.	2020-10-15
Integration of a III-V Device on a Si Substrate App 20200091003 - Walke; Amey Mahadev ; et al.	2020-03-19
Integrated Circuit Including At Least One Nano-ridge Transistor App 20200075750 - Langer; Robert ; et al.	2020-03-05
High aspect ratio channel semiconductor device and method of manufacturing same Grant 10,566,250 - Kunert , et al. Feb	2020-02-18
High Aspect Ratio Channel Semiconductor Device And Method Of Manufacturing Same App 20190244862 - Kunert; Bernardette ; et al.	2019-08-08
Method of transferring a semiconductor layer Grant 10,340,188 - Mols , et al.	2019-07-02
High aspect ratio channel semiconductor device and method of manufacturing same Grant 10,224,250 - Kunert , et al.	2019-03-05
High Aspect Ratio Channel Semiconductor Device And Method Of Manufacturing Same App 20180082901 - Kunert; Bernardette ; et al.	2018-03-22
Method Of Transferring A Semiconductor Layer App 20180061712 - Mols; Yves ; et al.	2018-03-01
Gate-all-around semiconductor device and method of fabricating the same Grant 9,601,488 - Waldron , et al. March 21, 2	2017-03-21
Gate-all-around Semiconductor Device And Method Of Fabricating The Same App 20160240532 - Waldron; Niamh ; et al.	2016-08-18
Semiconductor-on-insulator device and method of fabricating the same Grant 9,355,889 - Waldron May 31, 2	2016-05-31
Gate-all-around semiconductor device and method of fabricating the same Grant 9,324,818 - Waldron , et al. April 26, 2	2016-04-26
Antiphase domain boundary-free III-V compound semiconductor material on semiconductor substrate and method for manufacturing thereof Grant 9,218,964 - Wang , et al. December 22, 2	2015-12-22
Semiconductor-on-insulator Device And Method Of Fabricating The Same App 20150279725 - Waldron; Niamh	2015-10-01
Gate-all-around Semiconductor Device And Method Of Fabricating The Same App 20150279947 - Waldron; Niamh ; et al.	2015-10-01
Method For Manufacturing Transistors And Associated Substrate App 20150076620 - WALDRON; Niamh ; et al.	2015-03-19
Method for manufacturing a hybrid MOSFET device and hybrid MOSFET obtainable thereby Grant 8,912,055 - Hoffman , et al. December 16, 2	2014-12-16
Method for Manufacturing a Hybrid MOSFET Device and Hybrid MOSFET Obtainable Thereby App 20120280326 - Hoffmann; Thomas Y. ; et al.	2012-11-08
Antiphase Domain Boundary-Free III-V Compound Semiconductor Material on Semiconductor Substrate and Method for Manufacturing Thereof App 20120032234 - Wang; Gang ; et al.	2012-02-09

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