Waldo; Grady S.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Waldo; Grady S..The latest application filed is for "low temperature process for polysilazane oxidation/densification".

Company Profile

0.12.11

Waldo; Grady S. - Boise ID US
Waldo; Grady S - Boise ID

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Low temperature process for polysilazane oxidation/densification Grant 8,575,040 - Fucsko , et al. November 5, 2	2013-11-05
Method of forming trench isolation Grant 7,811,897 - Fucsko , et al. October 12, 2	2010-10-12
Etch compositions and methods of processing a substrate Grant 7,629,266 - Fucsko , et al. December 8, 2	2009-12-08
Low Temperature Process for Polysilazane Oxidation/Densification App 20090269569 - Fucsko; Janos ; et al.	2009-10-29
Low temperature process for polysilazane oxidation/densification Grant 7,557,420 - Fucsko , et al. July 7, 2	2009-07-07
Low temperature process for polysilazane oxidation/densification Grant 7,521,378 - Fucsko , et al. April 21, 2	2009-04-21
Etch compositions and methods of processing a substrate Grant 7,491,650 - Fucsko , et al. February 17, 2	2009-02-17
Method of removing silicon from a substrate Grant 7,316,981 - Fucsko , et al. January 8, 2	2008-01-08
Etch Compositions and Methods of Processing a Substrate App 20070145009 - Fucsko; Janos ; et al.	2007-06-28
Method of removing silicon from a substrate App 20070111534 - Fucsko; Janos ; et al.	2007-05-17
Method of forming trench isolation within a semiconductor substrate Grant 7,205,245 - Fucsko , et al. April 17, 2	2007-04-17
Method of forming trench isolation App 20070037401 - Fucsko; Janos ; et al.	2007-02-15
Etch compositions and methods of processing a substrate App 20070023396 - Fucsko; Janos ; et al.	2007-02-01
Wet etching method of removing silicon from a substrate Grant 7,166,539 - Fucsko , et al. January 23, 2	2007-01-23
Wet etching method of removing silicon from a substrate and method of forming trench isolation Grant 7,135,381 - Fucsko , et al. November 14, 2	2006-11-14
Low temperature process for polysilazane oxidation/densification App 20060102977 - Fucsko; Janos ; et al.	2006-05-18
Methods of etching silicon nitride substantially selectively relative to an oxide of aluminum Grant 7,030,034 - Fucsko , et al. April 18, 2	2006-04-18
Wet etching method of removing silicon from a substrate and method of forming trench isolation App 20060024914 - Fucsko; Janos ; et al.	2006-02-02
Method of forming trench isolation within a semiconductor substrate App 20060009004 - Fucsko; Janos ; et al.	2006-01-12
Low temperature process for polysilazane oxidation/densification App 20060003596 - Fucsko; Janos ; et al.	2006-01-05
Methods of etching silicon nitride substantially selectively relative to an oxide of aluminum and methods of forming trench isolation within a semiconductor substrate App 20050061768 - Fucsko, Janos ; et al.	2005-03-24
Wet etching method of removing silicon from a substrate and method of forming trench isolation App 20050020091 - Fucsko, Janos ; et al.	2005-01-27

uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.

While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.

All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.