Patent | Date |
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Interconnect Structures With Airgaps And Dielectric-capped Interconnects App 20200227308 - LiCausi; Nicholas V. ;   et al. | 2020-07-16 |
Interconnect structures with airgaps and dielectric-capped interconnects Grant 10,707,119 - LiCausi , et al. | 2020-07-07 |
Method of manufacturing selective nanostructures into finFET process flow Grant 10,049,944 - Beasor , et al. August 14, 2 | 2018-08-14 |
Method Of Manufacturing Selective Nanostructures Into Finfet Process Flow App 20180096899 - BEASOR; Scott ;   et al. | 2018-04-05 |
Integrated circuits with dual silicide contacts and methods for fabricating same Grant 9,660,075 - Koh , et al. May 23, 2 | 2017-05-23 |
Methods of forming FinFET devices with substantially undoped channel regions Grant 9,634,143 - Wahl , et al. April 25, 2 | 2017-04-25 |
Integrated Circuits With Dual Silicide Contacts And Methods For Fabricating Same App 20160172493 - Koh; Shao Ming ;   et al. | 2016-06-16 |
Integrated circuits with dual silicide contacts and methods for fabricating same Grant 9,293,462 - Koh , et al. March 22, 2 | 2016-03-22 |
Integrated Circuits With Dual Silicide Contacts And Methods For Fabricating Same App 20160049490 - Bouche; Guillaume ;   et al. | 2016-02-18 |
Integrated circuits with dual silicide contacts and methods for fabricating same Grant 9,196,694 - Bouche , et al. November 24, 2 | 2015-11-24 |
Integrated circuits with metal-insulator-semiconductor (MIS) contact structures and methods for fabricating same Grant 9,177,805 - Bouche , et al. November 3, 2 | 2015-11-03 |
Integrated Circuits With Metal-insulator-semiconductor (mis) Contact Structures And Methods For Fabricating Same App 20150214059 - Bouche; Guillaume ;   et al. | 2015-07-30 |
Iintegrated Circuits With Dual Silicide Contacts And Methods For Fabricating Same App 20150214228 - Koh; Shao Ming ;   et al. | 2015-07-30 |
Integrated Circuits With Dual Silicide Contacts And Methods For Fabricating Same App 20150091093 - Bouche; Guillaume ;   et al. | 2015-04-02 |
Methods of forming a masking layer for patterning underlying structures Grant 8,969,207 - Schmid , et al. March 3, 2 | 2015-03-03 |
Strained silicon carbide channel for electron mobility of NMOS Grant 8,963,255 - Wahl , et al. February 24, 2 | 2015-02-24 |
Methods of forming trench/via features in an underlying structure using a process that includes a masking layer formed by a directed self-assembly process Grant 8,906,802 - Wahl , et al. December 9, 2 | 2014-12-09 |
Methods of forming a semiconductor device with a nanowire channel structure by performing an anneal process Grant 8,853,019 - Fronheiser , et al. October 7, 2 | 2014-10-07 |
Methods of trimming nanowire structures Grant 8,846,511 - LiCausi , et al. September 30, 2 | 2014-09-30 |
Methods Of Forming A Semiconductor Device With A Nanowire Channel Structure By Performing An Anneal Process App 20140273423 - Fronheiser; Jody A. ;   et al. | 2014-09-18 |
Methods Of Forming A Masking Layer For Patterning Underlying Structures App 20140273473 - Schmid; Gerard M. ;   et al. | 2014-09-18 |
Methods Of Forming Trench/via Features In An Underlying Structure Using A Process That Includes A Masking Layer Formed By A Directed Self-assembly Process App 20140273469 - Wahl; Jeremy A. ;   et al. | 2014-09-18 |
Methods Of Trimming Nanowire Structures App 20140227849 - LiCausi; Nicholas V. ;   et al. | 2014-08-14 |
Strained Silicon Carbide Channel For Electron Mobility Of Nmos App 20140203298 - WAHL; Jeremy A. ;   et al. | 2014-07-24 |
Electronic device having plural FIN-FETs with different FIN heights and planar FETs on the same substrate Grant 8,759,904 - Wahl , et al. June 24, 2 | 2014-06-24 |
Strained silicon carbide channel for electron mobility of NMOS Grant 8,722,482 - Wahl , et al. May 13, 2 | 2014-05-13 |
Methods of forming dielectrically isolated fins for a FinFET semiconductor by performing an etching process wherein the etch rate is modified via inclusion of a dopant material Grant 8,691,640 - LiCausi , et al. April 8, 2 | 2014-04-08 |
Combined Planar Fet And Fin-fet Devices And Methods App 20130049136 - Wahl; Jeremy A. ;   et al. | 2013-02-28 |
Strained Silicon Carbide Channel For Electron Mobility Of Nmos App 20110227094 - Wahl; Jeremy A. ;   et al. | 2011-09-22 |