Wada; Tsutomu

Patent Applications and Registrations

Patent applications and USPTO patent grants for Wada; Tsutomu.The latest application filed is for "structure of heat exchanger core without header plate".

Company Profile

1.8.5

Wada; Tsutomu - Tokyo JP
WADA; Tsutomu - Shibuya-ku Tokyo
Wada; Tsutomu - Higashiyamato JP
Wada; Tsutomu - Fuchu JP
Wada; Tsutomu - Higashi-Yamato JA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Structure of heat exchanger core without header plate Grant 10,634,431 - Shiozawa , et al.	2020-04-28
Structure Of Heat Exchanger Core Without Header Plate App 20180320975 - SHIOZAWA; Kensuke ; et al.	2018-11-08
Wastewater treatment apparatus, wastewater treatment method, wastewater treatment system, control device, and control method Grant 9,522,832 - Furuya , et al. December 20, 2	2016-12-20
Wastewater treatment apparatus, wastewater treatment method, wastewater treatment system, control device, and control method Grant 9,302,923 - Furuya , et al. April 5, 2	2016-04-05
Method of manufacturing a semiconductor device Grant RE45,931 - Wada , et al. March 15, 2	2016-03-15
Wastewater Treatment Apparatus, Wastewater Treatment Method, Wastewater Treatment System, Control Device, And Control Method App 20140374346 - FURUYA; Yuji ; et al.	2014-12-25
Wastewater Treatment Apparatus, Wastewater Treatment Method, Wastewater Treatment System, Control Device, And Control Method App 20140374345 - FURUYA; Yuji ; et al.	2014-12-25
Method of manufacturing a semiconductor device App 20050026323 - Wada, Tsutomu ; et al.	2005-02-03
Method of manufacturing a semiconductor device Grant 6,797,539 - Wada , et al. September 28, 2	2004-09-28
Method of manufacturing a semiconductor device App 20030199122 - Wada, Tsutomu ; et al.	2003-10-23
Method of manufacturing a semiconductor device Grant 6,602,734 - Wada , et al. August 5, 2	2003-08-05
Active matrix structure for liquid crystal display elements wherein each of the gate/data lines includes at least a molybdenum-base alloy layer containing 0.5 to 10 wt. % of chromium Grant 5,162,933 - Kakuda , et al. Nov	1992-11-10
Insulated gate type field effect transistors Grant 4,074,300 - Sakai , et al. February 14, 1	1978-02-14

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