Wada; Mitsugu

Patent Applications and Registrations

Patent applications and USPTO patent grants for Wada; Mitsugu.The latest application filed is for "nitride semiconductor light-emitting element".

Company Profile

5.14.15

Wada; Mitsugu - Ishikawa JP
WADA; Mitsugu - Hakusan-shi Ishikawa JP
Wada; Mitsugu - Kanagawa-ken JP
Wada; Mitsugu - Kanagawa JP
Wada; Mitsugu - Kaisei-machi JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Nitride semiconductor light-emitting element and production method for nitride semiconductor light-emitting element Grant 11,444,222 - Furusawa , et al. September 13, 2	2022-09-13
Nitride semiconductor light-emitting element Grant 11,367,807 - Wada , et al. June 21, 2	2022-06-21
Nitride semiconductor light-emitting element and production method for nitride semiconductor light-emitting element Grant 11,227,974 - Furusawa , et al. January 18, 2	2022-01-18
Nitride Semiconductor Light-emitting Element App 20210066548 - WADA; Mitsugu ; et al.	2021-03-04
Nitride Semiconductor Element And Nitride Semiconductor Element Production Method App 20210066546 - WADA; Mitsugu ; et al.	2021-03-04
Nitride Semiconductor Light-emitting Element And Production Method For Nitride Semiconductor Light-emitting Element App 20200279971 - FURUSAWA; Yuta ; et al.	2020-09-03
Nitride Semiconductor Light-emitting Element And Production Method For Nitride Semiconductor Light-emitting Element App 20200279973 - FURUSAWA; Yuta ; et al.	2020-09-03
Nitride Semiconductor Light-emitting Element And Method For Manufacturing Nitride Semiconductor Light-emitting Element App 20200227590 - PERNOT; Cyril ; et al.	2020-07-16
Semiconductor Light-emitting Element And Method For Manufacturing Semiconductor Light-emitting Element App 20190393378 - WADA; Mitsugu ; et al.	2019-12-26
Exposure system Grant 7,394,478 - Wada July 1, 2	2008-07-01
Endocavity utrasonic probe App 20060241479 - Wada; Mitsugu	2006-10-26
Semiconductor laser device having strain buffer layer between compressive-strain quantum well layer and tensile-strain barrier layer Grant 6,973,109 - Fukunaga , et al. December 6, 2	2005-12-06
Exposure system App 20050078168 - Wada, Mitsugu	2005-04-14
Semiconductor laser and method of manufacturing the same Grant 6,876,688 - Hayakawa , et al. April 5, 2	2005-04-05
GaN substrate formed under controlled growth condition over GaN layer having discretely formed pits Grant 6,797,416 - Wada , et al. September 28, 2	2004-09-28
Substrate including wide low-defect region for use in semiconductor element Grant 6,709,513 - Fukunaga , et al. March 23, 2	2004-03-23
GaN substrate formed under controlled growth condition over GaN layer having discretely formed pits App 20030180580 - Wada, Mitsugu ; et al.	2003-09-25
Semiconductor laser device having thickened impurity-doped aluminum-free optical waveguide layers Grant 6,625,190 - Hayakawa , et al. September 23, 2	2003-09-23
High-power semiconductor laser device having current confinement structure and index-guided structure and stably oscillating in single mode Grant 6,600,770 - Fukunaga , et al. July 29, 2	2003-07-29
GaN substrate formed over GaN layer having discretely formed minute holes produced by use of discretely arranged growth suppression mask elements App 20030047746 - Kuniyasu, Toshiaki ; et al.	2003-03-13
High-power semiconductor laser device having current confinement structure and index-guided structure, and oscillating in transverse mode Grant 6,516,016 - Fukunaga , et al. February 4, 2	2003-02-04
Substrate including wide low-defect region for use in semiconductor element App 20030006211 - Fukunaga, Toshiaki ; et al.	2003-01-09
High-power semiconductor laser device including resistance reduction layer which has intermediate energy gap App 20010043630 - Akinaga, Fujio ; et al.	2001-11-22
High-power semiconductor laser device having current confinement structure and index-guided structure and stably oscillating in single mode App 20010033591 - Fukunaga, Toshiaki ; et al.	2001-10-25
Semiconductor laser element App 20010028668 - Fukunaga, Toshiaki ; et al.	2001-10-11
Semiconductor laser device having strain buffer layer between compressive-strain quantum well layer and tensile-strain barrier layer App 20010017875 - Fukunaga, Toshiaki ; et al.	2001-08-30
Semiconductor laser device Grant 6,127,691 - Fukunaga , et al. October 3, 2	2000-10-03
Semiconductor laser Grant 6,028,874 - Wada , et al. February 22, 2	2000-02-22
Semiconductor laser Grant 5,995,528 - Fukunaga , et al. November 30, 1	1999-11-30

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