Vytla; Rajeev-Krishna

Patent Applications and Registrations

Patent applications and USPTO patent grants for Vytla; Rajeev-Krishna.The latest application filed is for "active gate bias driver".

Company Profile

3.10.13

Vytla; Rajeev-Krishna - El Segundo CA
Vytla; Rajeev Krishna - Los Angeles CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Active gate bias driver Grant 10,680,598 - Vytla , et al.	2020-06-09
Active Gate Bias Driver App 20190260368 - Vytla; Rajeev-Krishna ; et al.	2019-08-22
Active gate bias driver Grant 10,224,918 - Vytla , et al.	2019-03-05
Bipolar semiconductor device with multi-trench enhancement regions Grant 10,164,078 - Udrea , et al. Dec	2018-12-25
Semiconductor device having a superjunction structure Grant 10,115,812 - Udrea , et al. October 30, 2	2018-10-30
Active Gate Bias Driver App 20180159520 - Vytla; Rajeev-Krishna ; et al.	2018-06-07
Edge termination structure having a termination charge region below a recessed field oxide region Grant 9,899,477 - Turner , et al. February 20, 2	2018-02-20
Bipolar semiconductor device with sub-cathode enhancement regions Grant 9,871,128 - Udrea , et al. January 16, 2	2018-01-16
Semiconductor Device Having a Superjunction Structure App 20180012983 - Udrea; Florin ; et al.	2018-01-11
Bipolar semiconductor device having a deep charge-balanced structure Grant 9,831,330 - Udrea , et al. November 28, 2	2017-11-28
IGBT having a deep superjunction structure Grant 9,799,725 - Udrea , et al. October 24, 2	2017-10-24
Bipolar Semiconductor Device with Multi-Trench Enhancement Regions App 20170271488 - Udrea; Florin ; et al.	2017-09-21
Bipolar Semiconductor Device Having Localized Enhancement Regions App 20170271445 - Udrea; Florin ; et al.	2017-09-21
Bipolar Semiconductor Device with Sub-Cathode Enhancement Regions App 20170271487 - Udrea; Florin ; et al.	2017-09-21
Bipolar semiconductor device having a charge-balanced inter-trench structure Grant 9,768,284 - Udrea , et al. September 19, 2	2017-09-19
IGBT having an inter-trench superjunction structure Grant 9,685,506 - Udrea , et al. June 20, 2	2017-06-20
Bipolar Semiconductor Device Having a Deep Charge-Balanced Structure App 20160260823 - Udrea; Florin ; et al.	2016-09-08
IGBT Having an Inter-Trench Superjunction Structure App 20160260799 - Udrea; Florin ; et al.	2016-09-08
IGBT Having a Deep Superjunction Structure App 20160260825 - Udrea; Florin ; et al.	2016-09-08
Bipolar Semiconductor Device Having a Charge-Balanced Inter-Trench Structure App 20160260824 - Udrea; Florin ; et al.	2016-09-08
Edge Termination Structure Having a Termination Charge Region Below a Recessed Field Oxide Region App 20160020308 - Turner; Russell ; et al.	2016-01-21
Edge Termination Using Guard Rings Between Recessed Field Oxide Regions App 20160020279 - Turner; Russell ; et al.	2016-01-21

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