Voronkov; Vladimir V.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Voronkov; Vladimir V..The latest application filed is for "apparatus for stressing semiconductor substrates".

Company Profile

5.15.23

Voronkov; Vladimir V. - Merano IT

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Apparatus for stressing semiconductor substrates Grant 11,282,715 - Falster , et al. March 22, 2	2022-03-22
Apparatus for stressing semiconductor substrates Grant 11,276,583 - Falster , et al. March 15, 2	2022-03-15
Apparatus for stressing semiconductor substrates Grant 11,276,582 - Falster , et al. March 15, 2	2022-03-15
Apparatus For Stressing Semiconductor Substrates App 20190333778 - Falster; Robert J. ; et al.	2019-10-31
Apparatus For Stressing Semiconductor Substrates App 20190311913 - Falster; Robert J. ; et al.	2019-10-10
Apparatus For Stressing Semiconductor Substrates App 20190311912 - Falster; Robert J. ; et al.	2019-10-10
Apparatus For Stressing Semiconductor Substrates App 20190295853 - Falster; Robert J. ; et al.	2019-09-26
Apparatus for stressing semiconductor substrates Grant 10,361,097 - Falster , et al.	2019-07-23
Oxygen precipitation in heavily doped silicon wafers sliced from ingots grown by the Czochralski method Grant 9,634,098 - Falster , et al. April 25, 2	2017-04-25
Processes and apparatus for preparing heterostructures with reduced strain by radial distension Grant 9,583,363 - Falster , et al. February 28, 2	2017-02-28
Processes and apparatus for preparing heterostructures with reduced strain by radial compression Grant 9,583,364 - Falster , et al. February 28, 2	2017-02-28
Production of high precipitate density wafers by activation of inactive oxygen precipitate nuclei Grant 9,129,919 - Falster , et al. September 8, 2	2015-09-08
Processes for suppressing minority carrier lifetime degradation in silicon wafers Grant 8,969,119 - Falster , et al. March 3, 2	2015-03-03
Oxygen Precipitation In Heavily Doped Silicon Wafers Sliced From Ingots Grown By The Czochralski Method App 20140361408 - Falster; Robert J. ; et al.	2014-12-11
Apparatus for Stressing Semiconductor Substrates App 20140182788 - Falster; Robert J. ; et al.	2014-07-03
Processes and Apparatus for Preparing Heterostructures with Reduced Strain by Radial Distension App 20140187022 - Falster; Robert J. ; et al.	2014-07-03
Processes and Apparatus for Preparing Heterostructures with Reduced Strain by Radial Compression App 20140187023 - Falster; Robert J. ; et al.	2014-07-03
Production Of High Precipitate Density Wafers By Activation Of Inactive Oxygen Precipitate Nuclei App 20140141537 - Falster; Robert J. ; et al.	2014-05-22
Processes For Suppressing Minority Carrier Lifetime Degradation In Silicon Wafers App 20130102129 - Falster; Robert J. ; et al.	2013-04-25
Epitaxial Wafer Having A Heavily Doped Substrate And Process For The Preparation Thereof App 20110250739 - Falster; Robert J. ; et al.	2011-10-13
Epitaxial Wafer Having A Heavily Doped Substrate And Process For The Preparation Thereof App 20090252974 - Falster; Robert J. ; et al.	2009-10-08
Arsenic And Phosphorus Doped Silicon Wafer Substrates Having Intrinsic Gettering App 20090130824 - Falster; Robert J. ; et al.	2009-05-21
High resistivity silicon structure and a process for the preparation thereof Grant 7,521,382 - Falster , et al. April 21, 2	2009-04-21
Single Crystal Silicon Having Improved Gate Oxide Integrity App 20090022930 - Falster; Robert J. ; et al.	2009-01-22
Diffusion Control in Heavily Doped Substrates App 20090004458 - Falster; Robert J. ; et al.	2009-01-01
Process for preparing single crystal silicon having improved gate oxide integrity Grant 7,431,765 - Falster , et al. October 7, 2	2008-10-07
High resistivity silicon structure and a process for the preparation thereof App 20060263967 - Falster; Robert J. ; et al.	2006-11-23
Method for the production of low defect density silicon Grant 7,105,050 - Voronkov , et al. September 12, 2	2006-09-12
Single crystal silicon having improved gate oxide integrity Grant 6,986,925 - Falster , et al. January 17, 2	2006-01-17
Process for preparing a stabilized ideal oxygen precipitating silicon wafer Grant 6,955,718 - Falster , et al. October 18, 2	2005-10-18
Process for preparing single crystal silicon having improved gate oxide integrity App 20050160967 - Falster, Robert J. ; et al.	2005-07-28
Process for preparing a stabilized ideal oxygen precipitating silicon wafer App 20050005841 - Falster, Robert J. ; et al.	2005-01-13
Process for suppressing the nucleation and/or growth of interstitial type defects by controlling the cooling rate through nucleation App 20030196587 - McCallum, Kirk D. ; et al.	2003-10-23
Process for preparing single crystal silicon having improved gate oxide integrity App 20020121238 - Falster, Robert J. ; et al.	2002-09-05
Method for the production of low defect density silicon App 20020056410 - Voronkov, Vladimir V. ; et al.	2002-05-16
Method for controlling growth of a silicon crystal to minimize growth rate and diameter deviations App 20020043206 - Mutti, Paolo ; et al.	2002-04-18

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