Voelkl; Johannes

Patent Applications and Registrations

Patent applications and USPTO patent grants for Voelkl; Johannes.The latest application filed is for "process for structuring at least one layer as well as electrical component with structures from the layer".

Company Profile

0.6.4

Voelkl; Johannes - Erlangen DE

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Process for structuring at least one year as well as electrical component with structures from the layer Grant 7,741,227 - Hackenberger , et al. June 22, 2	2010-06-22
Process for Structuring at Least One Layer as Well as Electrical Component with Structures From the Layer App 20080001162 - Hackenberger; Maja ; et al.	2008-01-03
Method for the sublimation growth of an SiC single crystal, involving heating under growth pressure Grant 6,773,505 - Kuhn , et al. August 10, 2	2004-08-10
Device having a foil-lined crucible for the sublimation growth of an SiC single crystal Grant 6,770,136 - Kuhn , et al. August 3, 2	2004-08-03
Seed crystal holder with lateral mount for an SiC seed crystal Grant 6,723,166 - Kuhn , et al. April 20, 2	2004-04-20
Device having a foil-lined crucible for the sublimation growth of an SiC single crystal App 20020096108 - Kuhn, Harald ; et al.	2002-07-25
Seed crystal holder with lateral mount for an SiC seed crystal App 20020088391 - Kuhn, Harald ; et al.	2002-07-11
Method for the sublimation growth of an SiC single crystal, involving heating under growth pressure App 20020083885 - Kuhn, Harald ; et al.	2002-07-04
Method and apparatus for the production of SiC by means of CVD with improved gas utilization Grant 6,299,683 - Rupp , et al. October 9, 2	2001-10-09
Device for treating a substrate Grant 6,153,012 - Rupp , et al. November 28, 2	2000-11-28

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