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Trimmable silicon-based thermistor with reduced stress dependence Grant 11,004,929 - Lee , et al. May 11, 2 | 2021-05-11 |
Trimmable Silicon-based Thermistor With Reduced Stress Dependence App 20200119132 - Lee; Dok Won ;   et al. | 2020-04-16 |
Ic With 3d Metal-insulator-metal Capacitor App 20200006471 - FERNANDES; POORNIKA ;   et al. | 2020-01-02 |
Dummy contacts to mitigate plasma charging damage to gate dielectrics Grant 10,249,621 - Visokay , et al. | 2019-04-02 |
Dummy Contacts To Mitigate Plasma Charging Damage To Gate Dielectrics App 20180175023 - VISOKAY; MARK ROBERT ;   et al. | 2018-06-21 |
Process-compatible Sputtering Target For Forming Ferroelectric Memory Capacitor Plates App 20150221516 - Visokay; Mark Robert ;   et al. | 2015-08-06 |
Hydrogen-blocking film for ferroelectric capacitors Grant 8,822,236 - Lin , et al. September 2, 2 | 2014-09-02 |
Process-compatible Sputtering Target For Forming Ferroelectric Memory Capacitor Plates App 20140147940 - Visokay; Mark Robert ;   et al. | 2014-05-29 |
Hydrogen-blocking Film For Ferroelectric Capacitors App 20130309783 - Lin; Bo-Yang ;   et al. | 2013-11-21 |
Hydrogen-Blocking Film for Ferroelectric Capacitors App 20130056811 - Lin; Bo-Yang ;   et al. | 2013-03-07 |
Method to attain low defectivity fully silicided gates Grant 8,273,645 - Visokay , et al. September 25, 2 | 2012-09-25 |
Method To Attain Low Defectivity Fully Silicided Gates App 20110097884 - VISOKAY; Mark Robert ;   et al. | 2011-04-28 |
Triple-gate Transistor With Reverse Shallow Trench Isolation App 20100323486 - Chambers; James Joseph ;   et al. | 2010-12-23 |
Dual work function CMOS devices utilizing carbide based electrodes Grant 7,842,567 - Chambers , et al. November 30, 2 | 2010-11-30 |
Structure and method for a triple-gate transistor with reverse STI Grant 7,678,675 - Chambers , et al. March 16, 2 | 2010-03-16 |
Semiconductor CMOS devices and methods with NMOS high-k dielectric present in core region that mitigate damage to dielectric materials Grant 7,642,146 - Chambers , et al. January 5, 2 | 2010-01-05 |
Structure for dual work function metal gate electrodes by control of interface dipoles Grant 7,612,422 - Chambers , et al. November 3, 2 | 2009-11-03 |
Work function control of metals Grant 7,601,577 - Chambers , et al. October 13, 2 | 2009-10-13 |
Dual Work Function Cmos Devices Utilizing Carbide Based Electrodes App 20090068828 - Chambers; James Joseph ;   et al. | 2009-03-12 |
Dual work function CMOS devices utilizing carbide based electrodes Grant 7,470,577 - Chambers , et al. December 30, 2 | 2008-12-30 |
Structure And Method For A Triple-gate Transistor With Reverse Sti App 20080268599 - Chambers; James Joseph ;   et al. | 2008-10-30 |
Structure And Method For Dual Work Function Metal Gate Electrodes By Control Of Interface Dipoles App 20080157228 - Chambers; James Joseph ;   et al. | 2008-07-03 |
Semiconductor CMOS devices and methods with NMOS high-k dielectric formed prior to core PMOS silicon oxynitride dielectric formation using direct nitridation of silicon Grant 7,351,632 - Visokay , et al. April 1, 2 | 2008-04-01 |
Work Function Control Of Metals App 20080044957 - Chambers; James Joseph ;   et al. | 2008-02-21 |
Work function control of metals Grant 7,291,527 - Chambers , et al. November 6, 2 | 2007-11-06 |
Semiconductor CMOS devices and methods with NMOS high-k dielectric formed prior to core PMOS dielectric formation Grant 7,226,830 - Colombo , et al. June 5, 2 | 2007-06-05 |
Semiconductor CMOS Devices and Methods with NMOS High-K Dielectric Present in Core Region that Mitigate Damage to Dielectric Materials App 20070122962 - Chambers; James Joseph ;   et al. | 2007-05-31 |
Work function control of metals App 20070054446 - Chambers; James Joseph ;   et al. | 2007-03-08 |
Dual work function CMOS devices utilizing carbide based electrodes App 20070037335 - Chambers; James Joseph ;   et al. | 2007-02-15 |
Work function separation for fully silicided gates App 20070037333 - Colombo; Luigi ;   et al. | 2007-02-15 |
Semiconductor CMOS devices and methods with NMOS high-k dielectric present in core region that mitigate damage to dielectric materials Grant 7,176,076 - Chambers , et al. February 13, 2 | 2007-02-13 |
Methods that mitigate excessive source/drain silicidation in full gate silicidation metal gate flows App 20060258074 - Visokay; Mark Robert ;   et al. | 2006-11-16 |
Semiconductor CMOS devices and methods with NMOS high-k dielectric formed prior to core PMOS dielectric formation App 20060246716 - Colombo; Luigi ;   et al. | 2006-11-02 |
Semiconductor CMOS devices and methods with NMOS high-k dielectric present in core region that mitigate damage to dielectric materials App 20060246651 - Chambers; James Joseph ;   et al. | 2006-11-02 |
Semiconductor CMOS devices and methods with NMOS high-k dielectric formed prior to core PMOS silicon oxynitride dielectric formation using direct nitridation of silicon App 20060246647 - Visokay; Mark Robert ;   et al. | 2006-11-02 |
MOS transistor gates with thin lower metal silicide and methods for making the same Grant 7,045,456 - Murto , et al. May 16, 2 | 2006-05-16 |
Method for integrating high-k dielectrics in transistor devices Grant 7,045,431 - Rotondaro , et al. May 16, 2 | 2006-05-16 |
Method for fabricating split gate transistor device having high-k dielectrics Grant 6,979,623 - Rotondaro , et al. December 27, 2 | 2005-12-27 |
Triple-gate MOSFET transistor and methods for fabricating the same App 20050184319 - Chambers, James Joseph ;   et al. | 2005-08-25 |
Methods for fabricating a triple-gate MOSFET transistor Grant 6,927,106 - Chambers , et al. August 9, 2 | 2005-08-09 |
MOS transistor gates with thin lower metal silicide and methods for making the same App 20050136605 - Murto, Robert William ;   et al. | 2005-06-23 |
Implementation of split gate transistor technology with high-k gate dielectrics App 20050136632 - Rotondaro, Antonio L.P. ;   et al. | 2005-06-23 |
Method for integrating high-k dielectrics in transistor devices App 20050136589 - Rotondaro, Antonio L.P. ;   et al. | 2005-06-23 |
Triple-gate mosfet transistor and methods for fabricating the same App 20050095764 - Chambers, James Joseph ;   et al. | 2005-05-05 |
Bilayer deposition to avoid unwanted interfacial reactions during high K gate dielectric processing Grant 6,696,332 - Visokay , et al. February 24, 2 | 2004-02-24 |
Bilayer deposition to avoid unwanted interfacial reactions during high K gate dielectric processing App 20030116804 - Visokay, Mark Robert ;   et al. | 2003-06-26 |