Patent | Date |
---|
Semiconductor device fabricated using a metal microstructure control process Grant 8,575,014 - Colombo , et al. November 5, 2 | 2013-11-05 |
Selectively self-assembling oxygen diffusion barrier Grant 8,410,559 - Li , et al. April 2, 2 | 2013-04-02 |
Triple-gate transistor with reverse shallow trench isolation Grant 8,389,391 - Chambers , et al. March 5, 2 | 2013-03-05 |
Method of fabricating an embedded polysilicon resistor and an embedded eFuse isolated from a substrate Grant 8,377,790 - Kanike , et al. February 19, 2 | 2013-02-19 |
Method of Setting a Work Function of a Fully Silicided Semiconductor Device, and Related Device App 20120231590 - Colombo; Luigi ;   et al. | 2012-09-13 |
METHOD OF FABRICATION BODIES FOR AN EMBEDDED POLYSILICON RESISTOR AND AN EMBEDDED eFUSE ISOLATED FROM A SUBSTRATE App 20120196423 - Kanike; Narasimhulu ;   et al. | 2012-08-02 |
Semiconductor Device Fabricated Using A Metal Microstructure Control Process App 20120164820 - Colombo; Luigi ;   et al. | 2012-06-28 |
Semiconductor device fabricated using a metal microstructure control process Grant 8,124,529 - Colombo , et al. February 28, 2 | 2012-02-28 |
Gate structure and method Grant 8,021,990 - Rotondaro , et al. September 20, 2 | 2011-09-20 |
Method of Setting a Work Function of a Fully Silicided Semiconductor Device, and Related Device App 20110111586 - Colombo; Luigi ;   et al. | 2011-05-12 |
Methods for full gate silicidation of metal gate structures Grant 7,863,192 - Frank , et al. January 4, 2 | 2011-01-04 |
Selectively Self-assembling Oxygen Diffusion Barrier App 20100237442 - LI; ZHENGWEN ;   et al. | 2010-09-23 |
Semiconductor device manufactured using a method to improve gate doping while maintaining good gate profile Grant 7,767,511 - Visokay August 3, 2 | 2010-08-03 |
Method of Setting a Work Function of a Fully Silicided Semiconductor Device, and Related Device App 20100187613 - Colombo; Luigi ;   et al. | 2010-07-29 |
Two Step Method To Create A Gate Electrode Using A Physical Vapor Deposited Layer And A Chemical Vapor Deposited Layer App 20100155860 - Colombo; Luigi ;   et al. | 2010-06-24 |
Semiconductor device manufactured using a gate silicidation involving a disposable chemical/mechanical polishing stop layer Grant 7,709,349 - Visokay May 4, 2 | 2010-05-04 |
Doped WGe to form dual metal gates Grant 7,629,212 - Ramin , et al. December 8, 2 | 2009-12-08 |
Defect control in gate dielectrics Grant 7,601,578 - Colombo , et al. October 13, 2 | 2009-10-13 |
Gate Structure And Method App 20090227117 - Rotondaro; Antonio L.P. ;   et al. | 2009-09-10 |
Methods For Full Gate Silicidation Of Metal Gate Structures App 20090170258 - Frank; Aaron ;   et al. | 2009-07-02 |
Method of enhancing drive current in a transistor Grant 7,547,596 - Visokay , et al. June 16, 2 | 2009-06-16 |
Gate structure and method Grant 7,535,066 - Rotondaro , et al. May 19, 2 | 2009-05-19 |
Dual work function metal gate integration in semiconductor devices Grant 7,528,024 - Colombo , et al. May 5, 2 | 2009-05-05 |
Method Of Setting A Work Function Of A Fully Silicided Semiconductor Device, And Related Device App 20090053883 - COLOMBO; Luigi ;   et al. | 2009-02-26 |
Method Of Enhancing Drive Current In A Transistor App 20090032877 - Visokay; Mark R. ;   et al. | 2009-02-05 |
Semiconductor Device Manufactured Using a Method to Improve Gate Doping While Maintaining Good Gate Profile App 20080318376 - Visokay; Mark R. | 2008-12-25 |
Semiconductor Device Manufactured Using a Gate Silicidation Involving a Disposable Chemical/Mechanical Polishing Stop Layer App 20080283932 - Visokay; Mark R. | 2008-11-20 |
Doped WGe to form dual metal gates App 20080274598 - Ramin; Manfred ;   et al. | 2008-11-06 |
Method and system for forming dual work function gate electrodes in a semiconductor device Grant 7,432,566 - Rotondaro , et al. October 7, 2 | 2008-10-07 |
Refractory metal-based electrodes for work function setting in semiconductor devices Grant 7,387,956 - Colombo , et al. June 17, 2 | 2008-06-17 |
Method for controlling defects in gate dielectrics Grant 7,351,626 - Colombo , et al. April 1, 2 | 2008-04-01 |
Defect Control in Gate Dielectrics App 20080057739 - Colombo; Luigi ;   et al. | 2008-03-06 |
Method for manufacturing dual work function gate electrodes through local thickness-limited silicidation Grant 7,338,865 - Murto , et al. March 4, 2 | 2008-03-04 |
Refractory metal-based electrodes for work function setting in semiconductor devices Grant 7,321,154 - Colombo , et al. January 22, 2 | 2008-01-22 |
Semiconductor Device Having Multiple Work Functions and Method of Manufacture Therefor App 20070284676 - Alshareef; Husam N. ;   et al. | 2007-12-13 |
Semiconductor Device Fabricated Using A Metal Microstructure Control Process App 20070278584 - Colombo; Luigi ;   et al. | 2007-12-06 |
Gate dielectric and method Grant 7,291,890 - Visokay , et al. November 6, 2 | 2007-11-06 |
Method for fabricating dual work function metal gates Grant 7,253,049 - Lu , et al. August 7, 2 | 2007-08-07 |
Dual work function gate electrodes using doped polysilicon and a metal silicon germanium compound Grant 7,233,035 - Rotondaro , et al. June 19, 2 | 2007-06-19 |
Process for manufacturing dual work function metal gates in a microelectronics device Grant 7,229,873 - Colombo , et al. June 12, 2 | 2007-06-12 |
Semiconductor device having multiple work functions and method of manufacture therefor Grant 7,226,826 - Alshareef , et al. June 5, 2 | 2007-06-05 |
Method for fabricating transistor gate structures and gate dielectrics thereof App 20070072364 - Visokay; Mark R. ;   et al. | 2007-03-29 |
Method for fabricating transistor gate structures and gate dielectrics thereof App 20070072363 - Visokay; Mark R. ;   et al. | 2007-03-29 |
Method of fabricating a semiconductor having dual gate electrodes using a composition-altered metal layer Grant 7,183,221 - Visokay , et al. February 27, 2 | 2007-02-27 |
Process for manufacturing dual work function metal gates in a microelectronics device App 20070037343 - Colombo; Luigi ;   et al. | 2007-02-15 |
Gate stack and gate stack etch sequence for metal gate integration Grant 7,163,880 - Visokay January 16, 2 | 2007-01-16 |
Dual Work Function Gate Electrodes Using Doped Polysilicon And A Metal Silicon Germanium Compound App 20060292790 - Rotondaro; Antonio L. P. ;   et al. | 2006-12-28 |
Refractory Metal-based Electrodes For Work Function Setting In Semiconductor Devices App 20060273414 - Colombo; Luigi ;   et al. | 2006-12-07 |
Refractory Metal-based Electrodes For Work Function Setting In Semiconductor Devices App 20060267119 - Colombo; Luigi ;   et al. | 2006-11-30 |
Method for fabricating transistor gate structures and gate dielectrics thereof Grant 7,135,361 - Visokay , et al. November 14, 2 | 2006-11-14 |
Versatile system for triple-gated transistors with engineered corners Grant 7,119,386 - Visokay , et al. October 10, 2 | 2006-10-10 |
Top surface roughness reduction of high-k dielectric materials using plasma based processes Grant 7,115,530 - Quevedo-Lopez , et al. October 3, 2 | 2006-10-03 |
Dual work function gate electrodes using doped polysilicon and a metal silicon germanium compound Grant 7,109,077 - Rotondaro , et al. September 19, 2 | 2006-09-19 |
Semiconductor structure and method of fabrication App 20060202300 - Visokay; Mark R. ;   et al. | 2006-09-14 |
Gate structure and method Grant 7,105,891 - Visokay , et al. September 12, 2 | 2006-09-12 |
Refractory metal-based electrodes for work function setting in semiconductor devices Grant 7,098,516 - Colombo , et al. August 29, 2 | 2006-08-29 |
Gate dielectric and method App 20060138556 - Visokay; Mark R. ;   et al. | 2006-06-29 |
Hydrogen free integration of high-k gate dielectrics Grant 7,067,434 - Colombo , et al. June 27, 2 | 2006-06-27 |
Method for fabricating dual work function metal gates App 20060134844 - Lu; Jiong-Ping ;   et al. | 2006-06-22 |
Top surface roughness reduction of high-k dielectric materials using plasma based processes App 20060121744 - Quevedo-Lopez; Manuel A. ;   et al. | 2006-06-08 |
Gate dielectric and method Grant 7,018,902 - Visokay , et al. March 28, 2 | 2006-03-28 |
Versatile system for triple-gated transistors with engineered corners App 20060043524 - Visokay; Mark R. ;   et al. | 2006-03-02 |
Dual work function gate electrodes obtained through local thickness-limited silicidation App 20060019437 - Murto; Robert W. ;   et al. | 2006-01-26 |
Gate stack and gate stack etch sequence for metal gate integration App 20050269672 - Visokay, Mark R. | 2005-12-08 |
Versatile system for triple-gated transistors with engineered corners Grant 6,969,644 - Visokay , et al. November 29, 2 | 2005-11-29 |
Dual work function metal gate integration in semiconductor devices App 20050258468 - Colombo, Luigi ;   et al. | 2005-11-24 |
Refractory metal-based electrodes for work function setting in semiconductor devices App 20050258500 - Colombo, Luigi ;   et al. | 2005-11-24 |
Semiconductor device having multiple work functions and method of manufacture therefor App 20050233533 - Alshareef, Husam N. ;   et al. | 2005-10-20 |
CVD of PtRh with good adhesion and morphology Grant 6,918,960 - Li , et al. July 19, 2 | 2005-07-19 |
Hydrogen Free Integration Of High-k Gate Dielectrics App 20050136679 - Colombo, Luigi ;   et al. | 2005-06-23 |
Defect control in gate dielectrics App 20050136690 - Colombo, Luigi ;   et al. | 2005-06-23 |
Hydrogen free formation of gate electrodes App 20050136580 - Colombo, Luigi ;   et al. | 2005-06-23 |
Method for fabricating transistor gate structures and gate dielectrics thereof App 20050130442 - Visokay, Mark R. ;   et al. | 2005-06-16 |
Top surface roughness reduction of high-k dielectric materials using plasma based processes App 20050124109 - Quevedo-Lopez, Manuel A. ;   et al. | 2005-06-09 |
Anneal of high-k dielectric using NH3 and an oxidizer App 20050124121 - Rotondaro, Antonio L.P. ;   et al. | 2005-06-09 |
Dual metal-alloy nitride gate electrodes Grant 6,893,924 - Visokay May 17, 2 | 2005-05-17 |
Dual metal-alloy nitride gate electrodes App 20050098833 - Visokay, Mark R. | 2005-05-12 |
Semiconductor structure and method of fabrication App 20050101145 - Visokay, Mark R. ;   et al. | 2005-05-12 |
CVD of PtRh with good adhesion and morphology App 20050066895 - Li, Weimin ;   et al. | 2005-03-31 |
Complementary transistors having respective gates formed from a metal and a corresponding metal-silicide Grant 6,858,908 - Rotondaro , et al. February 22, 2 | 2005-02-22 |
Dual metal-alloy nitride gate electrodes App 20050035417 - Visokay, Mark R. | 2005-02-17 |
High temperature interface layer growth for high-k gate dielectric Grant 6,852,645 - Colombo , et al. February 8, 2 | 2005-02-08 |
Gate structure and method App 20050023623 - Visokay, Mark R. ;   et al. | 2005-02-03 |
Method and system for forming dual work function gate electrodes in a semiconductor device App 20050006711 - Rotondaro, Antonio L.P. ;   et al. | 2005-01-13 |
Multiple work function gates Grant 6,835,639 - Rotondaro , et al. December 28, 2 | 2004-12-28 |
High temperature interface layer growth for high-k gate dielectric App 20040238904 - Colombo, Luigi ;   et al. | 2004-12-02 |
Anneal sequence for high-.kappa. film property optimization Grant 6,821,873 - Visokay , et al. November 23, 2 | 2004-11-23 |
High-k gate dielectric with uniform nitrogen profile and methods for making the same Grant 6,809,370 - Colombo , et al. October 26, 2 | 2004-10-26 |
Dual metal-alloy nitride gate electrodes Grant 6,809,394 - Visokay October 26, 2 | 2004-10-26 |
Gate structure and method Grant 6,797,599 - Visokay , et al. September 28, 2 | 2004-09-28 |
Method and system for forming dual work function gate electrodes in a semiconductor device Grant 6,794,252 - Rotondaro , et al. September 21, 2 | 2004-09-21 |
Gate structure and method Grant 6,783,997 - Rotondaro , et al. August 31, 2 | 2004-08-31 |
High temperature interface layer growth for high-k gate dielectric App 20040161883 - Colombo, Luigi ;   et al. | 2004-08-19 |
Method of making multiple work function gates by implanting metals with metallic alloying additives Grant 6,770,521 - Visokay , et al. August 3, 2 | 2004-08-03 |
Method Of Forming A Patterned Substantially Crystalline Ta2o5 Comprising Material, And Method Of Forming A Capacitor Having A Capacitor Dielectric Region Comprising Substantially Crystalline Ta2o5 Comprising Material Grant 6,767,806 - Basceri , et al. July 27, 2 | 2004-07-27 |
Use of hafnium silicon oxynitride as the cap layer of the sidewall spacer App 20040113206 - Chen, Yuanning ;   et al. | 2004-06-17 |
Use of hafnium silicon oxynitride as the cap layer of the sidewall spacer App 20040099964 - Chen, Yuanning ;   et al. | 2004-05-27 |
Dual work function gate electrodes using doped polysilicon and a metal silicon germanium compound App 20040099916 - Rotondaro, Antonio L. P. ;   et al. | 2004-05-27 |
Use of hafnium silicon oxynitride as the cap layer of the sidewall spacer App 20040094782 - Chen, Yuanning ;   et al. | 2004-05-20 |
Complementary transistors having respective gates formed from a metal and a corresponding metal-silicide App 20040033669 - Rotondaro, Antonio L. P. ;   et al. | 2004-02-19 |
Gate structure and method App 20040007747 - Visokay, Mark R. ;   et al. | 2004-01-15 |
CVD deposition of M-ON gate dielectrics App 20040002183 - Colombo, Luigi ;   et al. | 2004-01-01 |
Complementary transistors having respective gates formed from a metal and a corresponding metal-silicide Grant 6,642,094 - Rotondaro , et al. November 4, 2 | 2003-11-04 |
Methods of depositing a layer comprising tungsten and methods of forming a transistor gate line Grant 6,617,250 - Basceri , et al. September 9, 2 | 2003-09-09 |
Gate structure and method App 20030164525 - Rotondaro, Antonio L. P. ;   et al. | 2003-09-04 |
Gate structure and method App 20030148633 - Rotondaro, Antonio L. P. ;   et al. | 2003-08-07 |
Integrated circuit capacitor and memory Grant 6,600,183 - Visokay , et al. July 29, 2 | 2003-07-29 |
Anneal sequence for high-k film property optimization App 20030129817 - Visokay, Mark R. ;   et al. | 2003-07-10 |
CVD deposition of M-SION gate dielectrics App 20030111678 - Colombo, Luigi ;   et al. | 2003-06-19 |
Multiple work function gates App 20030104663 - Visokay, Mark R. ;   et al. | 2003-06-05 |
Gate dielectric and method App 20030104710 - Visokay, Mark R. ;   et al. | 2003-06-05 |
CVD of PtRh with good adhesion and morphology App 20030100183 - Li, Weimin ;   et al. | 2003-05-29 |
Annealing of high-k dielectric materials Grant 6,544,906 - Rotondaro , et al. April 8, 2 | 2003-04-08 |
Method and system for forming dual work function gate electrodes in a semiconductor device App 20030062577 - Rotondaro, Antonio L.P. ;   et al. | 2003-04-03 |
Gate structure and method App 20030045080 - Visokay, Mark R. ;   et al. | 2003-03-06 |
Annealing of high-K dielectric materials App 20020081826 - Rotondaro, Antonio L. P. ;   et al. | 2002-06-27 |
Complementary transistors having respective gates formed from a metal and a corresponding metal-silicide App 20020076886 - Rotondaro, Antonio L.P. ;   et al. | 2002-06-20 |
Methods for preparing ruthenium metal films Grant 6,380,080 - Visokay April 30, 2 | 2002-04-30 |
Methods for preparing ruthenium metal films App 20020013052 - Visokay, Mark R. | 2002-01-31 |
Encapsulated low resistance gate structure and method for forming same Grant 6,159,835 - Visokay , et al. December 12, 2 | 2000-12-12 |
Etchstop for integrated circuits Grant 6,090,697 - Xing , et al. July 18, 2 | 2000-07-18 |
Adhesion promoting sacrificial etch stop layer in advanced capacitor structures Grant 5,972,722 - Visokay , et al. October 26, 1 | 1999-10-26 |
Method for producing uniaxial tetragonal thin films of ternary intermetallic compounds Grant 5,603,766 - Visokay , et al. February 18, 1 | 1997-02-18 |
Uniaxial thin film structures formed from oriented bilayers and multilayers Grant 5,363,794 - Lairson , et al. November 15, 1 | 1994-11-15 |