Verma; Purakh

Patent Applications and Registrations

Patent applications and USPTO patent grants for Verma; Purakh.The latest application filed is for "method to form both high and low-k materials over the same dielectric region, and their application in mixed mode circuits".

Company Profile

0.6.7

Verma; Purakh - Singapore SG

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method to form both high and low-k materials over the same dielectric region, and their application in mixed mode circuits Grant 7,323,736 - Yelehanka , et al. January 29, 2	2008-01-29
Process to reduce substrate effects by forming channels under inductor devices and around analog blocks Grant 7,250,669 - Chan , et al. July 31, 2	2007-07-31
Method to form both high and low-k materials over the same dielectric region, and their application in mixed mode circuits App 20060207965 - Ramaghandramurthy Pradeep; Yelehanka ; et al.	2006-09-21
Method to form both high and low-k materials over the same dielectric region, and their application in mixed mode circuits Grant 7,060,193 - Yelehanka , et al. June 13, 2	2006-06-13
Method of forming an inductor with continuous metal deposition App 20050124131 - Hweing, Chit ; et al.	2005-06-09
Process to reduce substrate effects by forming channels under inductor devices and around analog blocks Grant 6,869,884 - Chan , et al. March 22, 2	2005-03-22
Method of forming an inductor with continuous metal deposition Grant 6,852,605 - Ng , et al. February 8, 2	2005-02-08
Process to reduce substrate effects by forming channels under inductor devices and around analog blocks App 20050009357 - Chan, Lap ; et al.	2005-01-13
Method of blocking nitrogen from thick gate oxide during dual gate CMP Grant 6,821,904 - Pradeep , et al. November 23, 2	2004-11-23
Method of forming an inductor with continuous metal deposition App 20040217440 - Ng, Chit Hwei ; et al.	2004-11-04
Process to reduce substrate effects by forming channels under inductor devices and around analog blocks App 20040038542 - Chan, Lap ; et al.	2004-02-26
Method of blocking nitrogen from thick gate oxide during dual gate CMP App 20040023506 - Pradeep, Yelehanka Ramachandramurthy ; et al.	2004-02-05
Method to form both high and low-k materials over the same dielectric region, and their application in mixed mode circuits App 20040004054 - Pradeep, Yelehanka Ramachandramurthy ; et al.	2004-01-08

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