Vaudo; Robert P.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Vaudo; Robert P..The latest application filed is for "thin film thermoelectric devices having favorable crystal tilt".

Company Profile

0.36.31

Vaudo; Robert P. - Cary NC
Vaudo; Robert P. - New Milford CT

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Thin film thermoelectric devices having favorable crystal tilt Grant 9,190,592 - Vaudo , et al. November 17, 2	2015-11-17
Low dislocation density III-V nitride substrate including filled pits and process for making the same Grant 8,728,236 - Xu , et al. May 20, 2	2014-05-20
Thin Film Thermoelectric Devices Having Favorable Crystal Tilt App 20140124010 - Vaudo; Robert P. ; et al.	2014-05-08
High voltage switching devices and process for forming same Grant 8,698,286 - Flynn , et al. April 15, 2	2014-04-15
High Voltage Switching Devices And Process For Forming Same App 20130193444 - Flynn; Jeffrey S. ; et al.	2013-08-01
High voltage switching devices and process for forming same Grant 8,390,101 - Flynn , et al. March 5, 2	2013-03-05
Orientation of electronic devices on mis-cut substrates Grant 8,378,463 - Brandes , et al. February 19, 2	2013-02-19
High Voltage Switching Devices And Process For Forming Same App 20120181547 - Flynn; Jeffrey S. ; et al.	2012-07-19
III-V nitride homoepitaxial material of improved quality formed on free-standing (Al,In,Ga)N substrates Grant 8,212,259 - Flynn , et al. July 3, 2	2012-07-03
High voltage switching devices and process for forming same Grant 8,174,089 - Flynn , et al. May 8, 2	2012-05-08
Vicinal gallium nitride substrate for high quality homoepitaxy Grant 8,043,731 - Xu , et al. October 25, 2	2011-10-25
Large area, uniformly low dislocation density GaN substrate and process for making the same Grant 7,972,711 - Xu , et al. July 5, 2	2011-07-05
LARGE AREA, UNIFORMLY LOW DISLOCATION DENSITY GaN SUBSTRATE AND PROCESS FOR MAKING THE SAME App 20110140122 - XU; XUEPING ; et al.	2011-06-16
Orientation Of Electronic Devices On Mis-cut Substrates App 20110089536 - Brandes; George R. ; et al.	2011-04-21
III-V nitride substrate boule and method of making and using the same Grant 7,915,152 - Vaudo , et al. March 29, 2	2011-03-29
Laser diode orientation on mis-cut substrates Grant 7,884,447 - Brandes , et al. February 8, 2	2011-02-08
Large area, uniformly low dislocation density GaN substrate and process for making the same Grant 7,879,147 - Xu , et al. February 1, 2	2011-02-01
High Voltage Switching Devices And Process For Forming Same App 20100301351 - Flynn; Jeffrey S. ; et al.	2010-12-02
Iii-v Nitride Substrate Boule And Method Of Making And Using The Same App 20100289122 - Vaudo; Robert P. ; et al.	2010-11-18
Methods of depositing epitaxial thermoelectric films having reduced crack and/or surface defect densities and related devices Grant 7,804,019 - Pierce , et al. September 28, 2	2010-09-28
High voltage switching devices and process for forming same Grant 7,795,707 - Flynn , et al. September 14, 2	2010-09-14
Bulk single crystal gallium nitride and method of making same Grant 7,794,542 - Tischler , et al. September 14, 2	2010-09-14
Vicinal Gallium Nitride Substrate For High Quality Homoepitaxy App 20100148320 - Xu; Xueping ; et al.	2010-06-17
Vicinal gallium nitride substrate for high quality homoepitaxy Grant 7,700,203 - Xu , et al. April 20, 2	2010-04-20
III-V nitride substrate boule and method of making and using the same Grant 7,655,197 - Vaudo , et al. February 2, 2	2010-02-02
Laser Diode Orientation on Mis-Cut Substrates App 20080265379 - Brandes; George R. ; et al.	2008-10-30
Vicinal Gallium Nitride Substrate For High Quality Homoepitaxy App 20080199649 - Xu; Xueping ; et al.	2008-08-21
Methods Of Depositing Epitaxial Thermoelectric Films Having Reduced Crack And/or Surface Defect Densities And Related Devices App 20080185030 - Pierce; Jonathan ; et al.	2008-08-07
Vicinal gallium nitride substrate for high quality homoepitaxy Grant 7,390,581 - Xu , et al. June 24, 2	2008-06-24
Bulk Single Crystal Gallium Nitride And Method Of Making Same App 20080127884 - Tischler; Michael A. ; et al.	2008-06-05
Large Area, Uniformly Low Dislocation Density Gan Substrate And Process For Making The Same App 20080124510 - Xu; Xueping ; et al.	2008-05-29
Bulk single crystal gallium nitride and method of making same Grant 7,332,031 - Tischler , et al. February 19, 2	2008-02-19
Large area, uniformly low dislocation density GaN substrate and process for making the same Grant 7,323,256 - Xu , et al. January 29, 2	2008-01-29
Large Area, Uniformly Low Dislocation Density Gan Substrate And Process For Making The Same App 20080003786 - Xu; Xueping ; et al.	2008-01-03
Semi-insulating GaN and method of making the same Grant 7,170,095 - Vaudo , et al. January 30, 2	2007-01-30
High electron mobility electronic device structures comprising native substrates and methods for making the same App 20070018198 - Brandes; George R. ; et al.	2007-01-25
Vicinal gallium nitride substrate for high quality homoepitaxy App 20060228584 - Xu; Xueping ; et al.	2006-10-12
Vicinal gallium nitride substrate for high quality homoepitaxy Grant 7,118,813 - Xu , et al. October 10, 2	2006-10-10
Bulk single crystal gallium nitride and method of making same App 20060032432 - Tischler; Michael A. ; et al.	2006-02-16
High surface quality GaN wafer and method of fabricating same App 20060029832 - Xu; Xueping ; et al.	2006-02-09
Bulk single crystal gallium nitride and method of making same Grant 6,972,051 - Tischler , et al. December 6, 2	2005-12-06
Free-standing (Al, Ga, In)N and parting method for forming same Grant 6,958,093 - Vaudo , et al. October 25, 2	2005-10-25
High surface quality GaN wafer and method of fabricating same Grant 6,951,695 - Xu , et al. October 4, 2	2005-10-04
Low defect density (Ga, A1, In) N and HVPE process for making same Grant 6,943,095 - Vaudo , et al. September 13, 2	2005-09-13
High voltage switching devices and process for forming same App 20050167697 - Flynn, Jeffrey S. ; et al.	2005-08-04
Vicinal gallium nitride substrate for high quality homoepitaxy App 20050104162 - Xu, Xueping ; et al.	2005-05-19
Large area, uniformly low dislocation density GaN substrate and process for making the same App 20050103257 - Xu, Xueping ; et al.	2005-05-19
Semi-insulating GaN and method of making the same App 20050009310 - Vaudo, Robert P. ; et al.	2005-01-13
Bulk single crystal gallium nitride and method of making same Grant 6,765,240 - Tischler , et al. July 20, 2	2004-07-20
III-V Nitride homoepitaxial material of improved MOVPE epitaxial quality (surface texture and defect density) formed on free-standing (Al,In,Ga)N substrates, and opto-electronic and electronic devices comprising same App 20030213964 - Flynn, Jeffrey S. ; et al.	2003-11-20
III-V nitride substrate boule and method of making and using the same App 20030157376 - Vaudo, Robert P. ; et al.	2003-08-21
III-V nitride substrate boule and method of making and using the same Grant 6,596,079 - Vaudo , et al. July 22, 2	2003-07-22
High surface quality GaN wafer and method of fabricating same App 20030127041 - Xu, Xueping ; et al.	2003-07-10
GaN-based devices using thick (Ga, Al, In)N base layers Grant 6,533,874 - Vaudo , et al. March 18, 2	2003-03-18
High Surface Quality Gan Wafer And Method Of Fabricating Same App 20020185054 - Xu, Xueping ; et al.	2002-12-12
High surface quality GaN wafer and method of fabricating same Grant 6,488,767 - Xu , et al. December 3, 2	2002-12-03
Low defect density (Ga, Al, In) N and HVPE process for making same App 20020166502 - Vaudo, Robert P. ; et al.	2002-11-14
Method For Achieving Improved Epitaxy Quality (surface Texture And Defect Density) On Free-standing (aluminum, Indium, Gallium) Nitride ((al,in,ga)n) Substrates For Opto-electronic And Electronic Devices Grant 6,447,604 - Flynn , et al. September 10, 2	2002-09-10
Low defect density (Ga, Al, In)N and HVPE process for making same Grant 6,440,823 - Vaudo , et al. August 27, 2	2002-08-27
Free-standing (Al, Ga, In)N and parting method for forming same App 20020068201 - Vaudo, Robert P. ; et al.	2002-06-06
Bulk single crystal gallium nitride and method of making same App 20020028314 - Tischler, Michael A. ; et al.	2002-03-07
Bulk single crystal gallium nitride and method of making same App 20010055660 - Tischler, Michael A. ; et al.	2001-12-27
Bulk Single Crystal Gallium Nitride And Method Of Making Same App 20010008656 - TISCHLER, MICHAEL A. ; et al.	2001-07-19
GaN-based devices using (Ga, AL, In)N base layers Grant 6,156,581 - Vaudo , et al. December 5, 2	2000-12-05

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