Vassilevski; Konstantin V.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Vassilevski; Konstantin V..The latest application filed is for "iii-v compound semiconductor device with an aixbyinzga1-x-y-zn1-a-bpaasb non-continuous quantum dot layer".

Company Profile

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Vassilevski; Konstantin V. - Newcastle Upon Tyne GB
Vassilevski, Konstantin V. - Newcastle GB
Vassilevski; Konstantin V. - New Castle upon Tyne GB
Vassilevski; Konstantin V. - St. Petersburg GB
Vassilevski, Konstantin V. - Newcastle upon GB

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
III-V compound semiconductor device with an AlxByInzGa1-x-y-zN1-a-bPaAsb non-continuous quantum dot layer Grant 6,849,862 - Nikolaev , et al. February 1, 2	2005-02-01
III-V compound semiconductor device with an AIxByInzGa1-x-y-zN1-a-bPaAsb non-continuous quantum dot layer App 20040026704 - Nikolaev, Audrey E. ; et al.	2004-02-12
Method for growing III-V compound semiconductor structures with an integral non-continuous quantum dot layer utilizing HVPE techniques Grant 6,599,133 - Nikolaev , et al. July 29, 2	2003-07-29
P-n heterojunction-based structures utilizing HVPE grown III-V compound layers Grant 6,559,467 - Nikolaev , et al. May 6, 2	2003-05-06
Method for growing p-type III-V compound material utilizing HVPE techniques Grant 6,555,452 - Nikolaev , et al. April 29, 2	2003-04-29
III-V compounds semiconductor device with an AlxByInzGa1-x-y-zN non continuous quantum dot layer Grant 6,479,839 - Nikolaev , et al. November 12, 2	2002-11-12
P-N homojunction-based structures utilizing HVPE growth III-V compound layers Grant 6,476,420 - Nikolaev , et al. November 5, 2	2002-11-05
Method for growing p-n homojunction-based structures utilizing HVPE techniques Grant 6,472,300 - Nikolaev , et al. October 29, 2	2002-10-29
P-n heterojunction-based structures utilizing HVPE grown III-V compound layers App 20020053679 - Nikolaev, Audrey E. ; et al.	2002-05-09
P-N junction-based structures utilizing HVPE grown III-V compound layers App 20020047135 - Nikolaev, Audrey E. ; et al.	2002-04-25
P-N homojunction-based structures utilizing HVPE grown III-V compound layers App 20020047127 - Nikolaev, Audrey E. ; et al.	2002-04-25
Method for growing p-n homojunction-based structures utilizing HVPE techniques App 20020039806 - Nikolaev, Audrey E. ; et al.	2002-04-04
III-V compounds semiconductor device with an AIxByInzGa1-x-y-zN non continuous quantum dot layer App 20020030192 - Nikolaev, Audrey E. ; et al.	2002-03-14
Method for growing p-type III-V compound material utilizing HVPE techniques App 20020028565 - Nikolaev, Audrey E. ; et al.	2002-03-07
Method for growing III-V compound semiconductor structures with an integral non-continuous quantum dot layer utilizing HVPE techniques App 20020025661 - Nikolaev, Audrey E. ; et al.	2002-02-28
Method for growing p-n heterojunction-based structures utilizing HVPE techniques App 20020022286 - Nikolaev, Audrey E. ; et al.	2002-02-21
III-V compound semiconductor device with an InGaN1-x-yPxASy non-continuous quantum dot layer App 20020017650 - Nikolaev, Audrey E. ; et al.	2002-02-14
Process for producing III-V nitride pn junctions and p-i-n junctions Grant 6,218,269 - Nikolaev , et al. April 17, 2	2001-04-17

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