Vaithyanathan; Venugopalan

Patent Applications and Registrations

Patent applications and USPTO patent grants for Vaithyanathan; Venugopalan.The latest application filed is for "programmable metallization memory cell with layered solid electrolyte structure".

Company Profile

0.27.23

Vaithyanathan; Venugopalan - Bloomington MN

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Programmable metallization memory cell with layered solid electrolyte structure Grant 8,772,122 - Amin , et al. July 8, 2	2014-07-08
Non-volatile resistive sense memory with improved switching Grant 8,686,388 - Roelofs , et al. April 1, 2	2014-04-01
Tunneling transistors Grant 8,648,426 - Jin , et al. February 11, 2	2014-02-11
Programmable Metallization Memory Cell With Layered Solid Electrolyte Structure App 20130330901 - Amin; Nurul ; et al.	2013-12-12
Programmable metallization memory cell with layered solid electrolyte structure Grant 8,487,291 - Amin , et al. July 16, 2	2013-07-16
Programmable metallization cell switch and memory units containing the same Grant 8,446,752 - Sun , et al. May 21, 2	2013-05-21
Non-volatile memory with active ionic interface region Grant 8,421,048 - Vaithyanathan , et al. April 16, 2	2013-04-16
Nano-dimensional non-volatile memory cells Grant 8,367,464 - Vaithyanathan , et al. February 5, 2	2013-02-05
Programmable metallization memory cell with planarized silver electrode Grant 8,309,945 - Tian , et al. November 13, 2	2012-11-13
Non-volatile Resistive Sense Memory With Improved Switching App 20120273744 - Roelofs; Andreas ; et al.	2012-11-01
Schottky diode switch and memory units containing the same Grant 8,288,749 - Kim , et al. October 16, 2	2012-10-16
Programmable metallization memory cell with planarized silver electrode Grant 8,288,254 - Tian , et al. October 16, 2	2012-10-16
Non-volatile memory cell stack with dual resistive elements Grant 8,248,836 - Jin , et al. August 21, 2	2012-08-21
Schottky Diode Switch And Memory Units Containing The Same App 20120199936 - Kim; Young Pil ; et al.	2012-08-09
Non-volatile resistive sense memory with praseodymium calcium manganese oxide Grant 8,227,783 - Roelofs , et al. July 24, 2	2012-07-24
Tunneling Transistors App 20120153400 - Jin; Insik ; et al.	2012-06-21
Non-volatile memory cell with non-ohmic selection layer Grant 8,203,865 - Tian , et al. June 19, 2	2012-06-19
Anti-parallel diode structure and method of fabrication Grant 8,203,875 - Amin , et al. June 19, 2	2012-06-19
Schottky Diode Switch And Memory Units Containing The Same App 20120149183 - Kim; Young Pil ; et al.	2012-06-14
Schottky diode switch and memory units containing the same Grant 8,198,181 - Kim , et al. June 12, 2	2012-06-12
Programmable Metallization Memory Cell With Planarized Silver Electrode App 20120138884 - Tian; Wei ; et al.	2012-06-07
Programmable Metallization Memory Cell With Planarized Silver Electrode App 20120142169 - Tian; Wei ; et al.	2012-06-07
Asymmetric barrier diode Grant 8,178,864 - Jin , et al. May 15, 2	2012-05-15
Schottky diode switch and memory units containing the same Grant 8,158,964 - Kim , et al. April 17, 2	2012-04-17
Programmable metallization memory cell with planarized silver electrode Grant 8,134,138 - Wei , et al. March 13, 2	2012-03-13
Nano-dimensional Non-volatile Memory Cells App 20110300687 - Vaithyanathan; Venugopalan ; et al.	2011-12-08
Non-volatile memory cells including small volume electrical contact regions Grant 8,022,547 - Vaithyanathan , et al. September 20, 2	2011-09-20
Non-Volatile Memory Cell With Non-Ohmic Selection Layer App 20110188293 - Tian; Wei ; et al.	2011-08-04
Anti-Parallel Diode Structure and Method of Fabrication App 20110122678 - Amin; Nurul ; et al.	2011-05-26
Non-volatile memory cell with non-ohmic selection layer Grant 7,936,585 - Tian , et al. May 3, 2	2011-05-03
Anti-parallel diode structure and method of fabrication Grant 7,911,833 - Amin , et al. March 22, 2	2011-03-22
Schottky Diode Switch And Memory Units Containing The Same App 20110006276 - Kim; Young Pil ; et al.	2011-01-13
Non-volatile Resistive Sense Memory App 20110006275 - Roelofs; Andreas ; et al.	2011-01-13
Anti-Parallel Diode Structure and Method of Fabrication App 20110007546 - Amin; Nurul ; et al.	2011-01-13
Non-Volatile Memory with Active Ionic Interface Region App 20110007544 - Vaithyanathan; Venugopalan ; et al.	2011-01-13
Non-Volatile Memory Cell Stack with Dual Resistive Elements App 20110007545 - Jin; Insik ; et al.	2011-01-13
Non-Volatile Memory Cell with Non-Ohmic Selection Layer App 20110007551 - Tian; Wei ; et al.	2011-01-13
Phase Change Memory Cell With Selecting Element App 20110002161 - Jin; Insik ; et al.	2011-01-06
Programmable Metallization Memory Cell With Planarized Silver Electrode App 20100193758 - Tian; Wei ; et al.	2010-08-05
Programmable Metallization Memory Cell With Layered Solid Electrolyte Structure App 20100193761 - Amin; Nurul ; et al.	2010-08-05
Nano-dimensional Non-volatile Memory Cells App 20100123542 - Vaithyanathan; Venugopalan ; et al.	2010-05-20
Asymmetric Barrier Diode App 20100123210 - Jin; Insik ; et al.	2010-05-20
Programmable Metallization Cell Switch And Memory Units Containing The Same App 20100110764 - Sun; Ming ; et al.	2010-05-06
Ferroelectric Memory With Magnetoelectric Element App 20100102369 - Tian; Wei ; et al.	2010-04-29

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