loadpatents
name:-0.013209104537964
name:-0.011178970336914
name:-0.0025849342346191
USUI; Yasunori Patent Filings

USUI; Yasunori

Patent Applications and Registrations

Patent applications and USPTO patent grants for USUI; Yasunori.The latest application filed is for "information terminal".

Company Profile
2.9.10
  • USUI; Yasunori - Tokyo JP
  • Usui; Yasunori - Mitaka JP
  • Usui; Yasunori - Kanagawa-ken JP
  • Usui; Yasunori - Yokohama JP
  • Usui; Yasunori - Kanagawa JP
  • Usui, Yasunori - Yokohama-Shi JP
  • Usui; Yasunori - Kawasaki JP
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Information Terminal
App 20210247808 - MOCHIZUKI; Yoshiaki ;   et al.
2021-08-12
Electronic device and waterproof case
Grant 10,809,769 - Chiba , et al. October 20, 2
2020-10-20
Electronic Device And Waterproof Case
App 20200142451 - CHIBA; Yasunori ;   et al.
2020-05-07
Mobile Device
App 20120162881 - USUI; Yasunori
2012-06-28
Mobile Device
App 20120165081 - USHIGOME; Youichi ;   et al.
2012-06-28
Mosfet
Grant 7,537,983 - Uchihara , et al. May 26, 2
2009-05-26
Vertical type semiconductor device and method of manufacturing the same
Grant 7,224,022 - Tokano , et al. May 29, 2
2007-05-29
Optical Coupling Device
App 20060197112 - Uchihara; Takeshi ;   et al.
2006-09-07
Mosfet
App 20060170049 - Uchihara; Takeshi ;   et al.
2006-08-03
MOSFET and optical coupling device having the same
App 20060170041 - Uchihara; Takeshi ;   et al.
2006-08-03
Semiconductor device
Grant 6,943,406 - Uchihara , et al. September 13, 2
2005-09-13
Semiconductor device
App 20040262675 - Uchihara, Takeshi ;   et al.
2004-12-30
Semiconductor device and method of manufacturing the same
App 20040238844 - Tokano, Kenichi ;   et al.
2004-12-02
Semiconductor device and manufacturing method thereof
Grant 6,521,954 - Kouzuki , et al. February 18, 2
2003-02-18
Power MOSFET having laterally three-layered structure formed among element isolation regions
Grant 6,410,958 - Usui , et al. June 25, 2
2002-06-25
A Power Mosfet Having Laterally Three-layered Structure Formed Among Element Isolation Regions
App 20020063259 - Usui, Yasunori ;   et al.
2002-05-30
MOS gate controlled thyristor having improved turn on/turn off characteristics
Grant 5,336,907 - Nakanishi , et al. August 9, 1
1994-08-09
Press-contact type semiconductor device
Grant 4,918,514 - Matsuda , et al. April 17, 1
1990-04-17
Semiconductor device turned on and off by light
Grant 4,717,947 - Matsuda , et al. January 5, 1
1988-01-05

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