Usikov; Alexander

Patent Applications and Registrations

Patent applications and USPTO patent grants for Usikov; Alexander.The latest application filed is for "growth of planar non-polar m-plane gallium nitride with hydride vapor phase epitaxy (hvpe)".

Company Profile

0.11.3

Usikov; Alexander - Gaithersburg MD US
Usikov; Alexander - Rockville MD
Usikov; Alexander - Silver Spring MD

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Apparatus and methods for controlling gas flows in a HVPE reactor Grant 9,416,464 - Dmitriev , et al. August 16, 2	2016-08-16
Free HCL used during pretreatment and AlGaN growth to control growth layer orientation and inclusions Grant 9,023,673 - Shapovalov , et al. May 5, 2	2015-05-05
Growth of planar non-polar {1 -1 0 0} M-plane and semi-polar {1 1 -2 2} gallium nitride with hydride vapor phase epitaxy (HVPE) Grant 8,673,074 - Usikov , et al. March 18, 2	2014-03-18
HVPE apparatus and methods for growth of p-type single crystal group III nitride materials Grant 8,647,435 - Dmitriev , et al. February 11, 2	2014-02-11
Growth of planar non-polar {10-10} M-plane gallium nitride with hydride vapor phase epitaxy (HVPE) Grant 8,629,065 - Spiberg , et al. January 14, 2	2014-01-14
Growth of Planar Non-Polar M-Plane Gallium Nitride With Hydride Vapor Phase Epitaxy (HVPE) App 20110108954 - Spiberg; Philippe ; et al.	2011-05-12
HVPE apparatus and methods for growth of indium containing materials and materials and structures grown thereby Grant 7,727,333 - Syrkin , et al. June 1, 2	2010-06-01
Growth of Planar Non-Polar M-Plane and Semi-Polar Gallium Nitride with Hydride Vapor Phase Epitaxy (HVPE) App 20100012948 - Usikov; Alexander ; et al.	2010-01-21
Method for fabricating a P-N heterojunction device utilizing HVPE grown III-V compound layers and resultant device Grant 6,890,809 - Karpov , et al. May 10, 2	2005-05-10
Method for fabricating a P-N heterojunction device utilizing HVPE grown III-V compound layers and resultant device App 20030049898 - Karpov, Sergey ; et al.	2003-03-13

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