Uritsky; Yuri
Patent Applications and Registrations
Patent applications and USPTO patent grants for Uritsky; Yuri.The latest application filed is for "method for fabricating an integrated gate dielectric layer for field effect transistors".
- Uritsky; Yuri - Newark CA
| Patent | Date |
|---|---|
| Measurement system with thickness calculation and method of operation thereof Grant 8,569,692 - Liu , et al. October 29, 2 | 2013-10-29 |
| Method for fabricating an integrated gate dielectric layer for field effect transistors Grant 7,601,648 - Chua , et al. October 13, 2 | 2009-10-13 |
| Method for fabricating an integrated gate dielectric layer for field effect transistors App 20080026553 - Chua; Thai Cheng ; et al. | 2008-01-31 |
| Method and apparatus for selectively marking a semiconductor wafer Grant 6,122,562 - Kinney , et al. September 19, 2 | 2000-09-19 |
| Method and apparatus for selectively marking a semiconductor wafer Grant 6,051,845 - Uritsky April 18, 2 | 2000-04-18 |
| Method and apparatus for transforming a substrate coordinate system into a wafer analysis tool coordinate system Grant 5,985,680 - Singhal , et al. November 16, 1 | 1999-11-16 |
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