loadpatents
name:-0.0078558921813965
name:-0.0083940029144287
name:-0.00060081481933594
Urano; Masahiko Patent Filings

Urano; Masahiko

Patent Applications and Registrations

Patent applications and USPTO patent grants for Urano; Masahiko.The latest application filed is for "semiconductor single crystal pulling apparatus and method for remelting semiconductor single crystal using this".

Company Profile
0.10.7
  • Urano; Masahiko - Nishigo-mura JP
  • Urano; Masahiko - Nishishirakawa N/A JP
  • Urano; Masahiko - Fukushima JP
  • Urano; Masahiko - Takasaki JP
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Semiconductor single crystal pulling apparatus and method for remelting semiconductor single crystal using this
Grant 10,113,247 - Masuda , et al. October 30, 2
2018-10-30
Semiconductor Single Crystal Pulling Apparatus And Method For Remelting Semiconductor Single Crystal Using This
App 20170292205 - MASUDA; Naoki ;   et al.
2017-10-12
Method of charging raw material, method of manufacturing single crystals, and single crystal manufacturing apparatus
Grant 9,650,724 - Kitagawa , et al. May 16, 2
2017-05-16
Method for measuring distance between lower end surface of heat insulating member and surface of raw material melt and method for controlling thereof
Grant 9,260,796 - Hoshi , et al. February 16, 2
2016-02-16
Method Of Charging Raw Material, Method Of Manufacturing Single Crystals, And Single-crystal Manufacturing Apparatus
App 20150233013 - Kitagawa; Katsuyuki ;   et al.
2015-08-20
Method for measuring and controlling distance between lower end surface of heat shielding member and surface of raw material melt and method for manufacturing silicon single crystal
Grant 8,885,915 - Sugawara , et al. November 11, 2
2014-11-11
Apparatus and method for producing single crystals
Grant 8,764,900 - Takano , et al. July 1, 2
2014-07-01
Method For Measuring And Controlling Distance Between Lower End Surface Of Heat Shielding Member And Surface Of Raw Material Melt And Method For Manufacturing Silicon Single Crystal
App 20130058540 - Sugawara; Kosei ;   et al.
2013-03-07
Method for determining distance between reference member and melt surface, method for controlling location of melt surface using the same, and apparatus for production silicon single crystal
Grant 8,085,985 - Urano , et al. December 27, 2
2011-12-27
Method For Measuring Distance Between Lower End Surface Of Heat Insulating Member And Surface Of Raw Material Melt And Method For Controlling Thereof
App 20100064964 - Hoshi; Ryoji ;   et al.
2010-03-18
Apparatus and method for producing single crystals
App 20090249995 - Takano; Kiyotaka ;   et al.
2009-10-08
Method For Determining Distance Between Reference Member And Melt Surface, Method For Controlling Location Of Melt Surface Using The Same, And Apparatus For Producing Silicon Single Crystal
App 20090232359 - Urano; Masahiko ;   et al.
2009-09-17
Wire vibration prevention mechanism for a single crystal pulling apparatus
Grant 5,089,239 - Mizuishi , et al. February 18, 1
1992-02-18

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