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Patent applications and USPTO patent grants for United Silicon Carbide, Inc..The latest application filed is for "reusable wide bandgap semiconductor substrate".
Patent | Date |
---|---|
Double-sided chip stack assembly Grant 11,211,373 - Bhalla , et al. December 28, 2 | 2021-12-28 |
Reusable Wide Bandgap Semiconductor Substrate App 20210005517 - Bhalla; Anup ;   et al. | 2021-01-07 |
Reusable wide bandgap semiconductor substrate Grant 10,825,733 - Bhalla , et al. November 3, 2 | 2020-11-03 |
Series-connected FETs in active linear mode Grant 10,673,396 - Dodge | 2020-06-02 |
Reusable Wide Bandgap Semiconductor Substrate App 20200135565 - Bhalla; Anup ;   et al. | 2020-04-30 |
Planar multi-implanted JFET Grant 10,446,695 - Bhalla , et al. Oc | 2019-10-15 |
Trench vertical JFET with improved threshold voltage control Grant 10,396,215 - Bhalla , et al. A | 2019-08-27 |
Trench vertical JFET with ladder termination Grant 10,367,099 - Li , et al. July 30, 2 | 2019-07-30 |
Vertical JFET made using a reduced masked set Grant 10,367,098 - Li , et al. July 30, 2 | 2019-07-30 |
Tunneling field effect transistor Grant 10,147,813 - Huang De | 2018-12-04 |
Trench Vertical JFET With Ladder Termination App 20180342626 - Li; Zhongda ;   et al. | 2018-11-29 |
Planar triple-implanted JFET Grant 10,121,907 - Bhalla , et al. November 6, 2 | 2018-11-06 |
Vertical JFET made using a reduced mask set Grant 10,056,500 - Li , et al. August 21, 2 | 2018-08-21 |
Trench vertical JFET with ladder termination Grant 10,050,154 - Li , et al. August 14, 2 | 2018-08-14 |
Vertical JFET Made Using A Reduced Masked Set App 20180226513 - Li; Zhongda ;   et al. | 2018-08-09 |
Perimeter Control Of Crack Propagation In Semiconductor Wafers App 20180102326 - Simon; William Kurt | 2018-04-12 |
Trenched and implanted bipolar junction transistor Grant 9,917,180 - Bhalla , et al. March 13, 2 | 2018-03-13 |
High voltage switch module Grant 9,866,213 - Zhang , et al. January 9, 2 | 2018-01-09 |
Tunneling Field Effect Transistor App 20170256642 - Huang; Xing | 2017-09-07 |
Hybrid wide-bandgap semiconductor bipolar switches Grant 9,721,944 - Fursin , et al. August 1, 2 | 2017-08-01 |
Self-aligned Shielded-gate Trench Mos-controlled Silicon Carbide Switch With Reduced Miller Capacitance And Method Of Manufacturing The Same App 20170213908 - FURSIN; Leonid ;   et al. | 2017-07-27 |
Planar Multi-implanted JFET App 20170213917 - Bhalla; Anup ;   et al. | 2017-07-27 |
Offset leadframe cascode package Grant 9,716,057 - Zhang , et al. July 25, 2 | 2017-07-25 |
Planar triple-implanted JFET Grant 9,653,618 - Bhalla , et al. May 16, 2 | 2017-05-16 |
Trench Vertical JFET With Ladder Termination App 20170133518 - Li; Zhongda ;   et al. | 2017-05-11 |
Wide Bandgap Junction Barrier Schottky Diode With Silicon Bypass App 20170125394 - Bhalla; Anup | 2017-05-04 |
Planar Triple-implanted JFET App 20170117392 - Bhalla; Anup ;   et al. | 2017-04-27 |
Planar Triple-implanted Jfet App 20170117418 - Bhalla; Anup ;   et al. | 2017-04-27 |
Vertical JFET Made Using A Reduced Mask Set App 20170018627 - Li; Zhongda ;   et al. | 2017-01-19 |
Vertical Jfet Made Using A Reduced Mask Set App 20170018657 - Li; Zhongda ;   et al. | 2017-01-19 |
Trenched And Implanted Bipolar Junction Transistor App 20170005183 - BHALLA; Anup ;   et al. | 2017-01-05 |
Trench Vertical JFET With Improved Threshold Voltage Control App 20160380117 - Bhalla; Anup ;   et al. | 2016-12-29 |
Trench Vertical Jfet With Improved Threshold Voltage Control App 20160336432 - Bhalla; Anup ;   et al. | 2016-11-17 |
Trench Vertical Jfet With Improved Threshold Voltage Control App 20160268446 - Bhalla; Anup ;   et al. | 2016-09-15 |
Hybrid wide-bandgap semiconductor bipolar switches Grant 9,331,068 - Fursin , et al. May 3, 2 | 2016-05-03 |
Hybrid Wide-bandgap Semiconductor Bipolar Switches App 20160118381 - Fursin; Leonid ;   et al. | 2016-04-28 |
High voltage switch Grant 9,325,306 - Li April 26, 2 | 2016-04-26 |
Silicon carbide MOSFET with integrated MOS diode Grant 9,324,807 - Bhalla , et al. April 26, 2 | 2016-04-26 |
High voltage switch Grant 9,312,847 - Li April 12, 2 | 2016-04-12 |
High voltage switch Grant 9,190,993 - Li November 17, 2 | 2015-11-17 |
Monolithically integrated cascode switches Grant 9,148,139 - Bhalla , et al. September 29, 2 | 2015-09-29 |
Trench shield connected JFET Grant 9,087,911 - Alexandrov , et al. July 21, 2 | 2015-07-21 |
Cascode switching circuit Grant 9,083,343 - Li , et al. July 14, 2 | 2015-07-14 |
Trenched and implanted accumulation mode metal-oxide-semiconductor field-effect transistor Grant 9,054,183 - Fursin , et al. June 9, 2 | 2015-06-09 |
Hybrid Wide-bandgap Semiconductor Bipolar Switches App 20150115289 - Fursin; Leonid ;   et al. | 2015-04-30 |
Formation of ohmic contacts on wide band gap semiconductors Grant 8,962,468 - Hostetler February 24, 2 | 2015-02-24 |
Trench Shield Connected Jfet App 20140361349 - Alexandrov; Peter ;   et al. | 2014-12-11 |
Vjfet devices Grant 8,860,098 - Bhalla , et al. October 14, 2 | 2014-10-14 |
Vjfet Devices App 20140264477 - Bhalla; Anup ;   et al. | 2014-09-18 |
Trenched And Implanted Accumulation Mode Metal-oxide-semiconductor Field-effect Transistor App 20140015036 - Fursin; Leonid ;   et al. | 2014-01-16 |
Solid-state disconnect device Grant 8,004,806 - Li August 23, 2 | 2011-08-23 |
Double-gated vertical junction field effect power transistor Grant 6,841,812 - Zhao January 11, 2 | 2005-01-11 |
NCAGE Code | 1H9B2 | UNITED SILICON CARBIDE, INC. |
CAGE Code | 1H9B2 | UNITED SILICON CARBIDE, INC. |
S.A.M. Registration | 1H9B2 [42068101] | UNITED SILICON CARBIDE, INC. |
SEC | 0001624351 | United Silicon Carbide, Inc. of DELAWARE |
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