loadpatents
name:-0.0075531005859375
name:-0.012915849685669
name:-0.00037884712219238
Umezaki; Junichi Patent Filings

Umezaki; Junichi

Patent Applications and Registrations

Patent applications and USPTO patent grants for Umezaki; Junichi.The latest application filed is for "semiconductor light-emitting device and manufacturing method thereof".

Company Profile
0.10.3
  • Umezaki; Junichi - Aichi JP
  • Umezaki; Junichi - Aichi-ken JP
  • Umezaki; Junichi - Inuyama-shi Aichi-ken JP
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Semiconductor light-emitting device and manufacturing method thereof
Grant 6,821,800 - Koide , et al. November 23, 2
2004-11-23
Semiconductor light-emitting device and manufacturing method thereof
App 20030124789 - Koide, Norikatsu ;   et al.
2003-07-03
Semiconductor light-emitting device and manufacturing method thereof
Grant 6,541,293 - Koide , et al. April 1, 2
2003-04-01
Semiconductor light-emitting device and manufacturing method thereof
App 20020146854 - Koide, Norikatsu ;   et al.
2002-10-10
Semiconductor light-emitting device and manufacturing method thereof
Grant 6,420,733 - Koide , et al. July 16, 2
2002-07-16
Semiconductor light-emitting device and manufacturing method thereof
App 20010048112 - Koide, Norikatsu ;   et al.
2001-12-06
Semiconductor light-emitting device and manufacturing method thereof
Grant 6,326,236 - Koide , et al. December 4, 2
2001-12-04
Methods and devices related to electrodes for p-type group III nitride compound semiconductors
Grant 6,121,127 - Shibata , et al. September 19, 2
2000-09-19
Semiconductor light-emitting device
Grant 6,040,588 - Koide , et al. March 21, 2
2000-03-21
Electrodes for p-type group III nitride compound semiconductors
Grant 6,008,539 - Shibata , et al. December 28, 1
1999-12-28
Light-emitting semiconductor device using gallium nitride compound
Grant 5,862,167 - Sassa , et al. January 19, 1
1999-01-19
Light-emitting semiconductor device using a Group III nitride compound and having a contact layer upon which an electrode is formed
Grant 5,753,939 - Sassa , et al. May 19, 1
1998-05-19
Light-emitting semiconductor device using group III nitrogen compound
Grant 5,587,593 - Koide , et al. December 24, 1
1996-12-24

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