UETA; Shunsaku
Patent Applications and Registrations
Patent applications and USPTO patent grants for UETA; Shunsaku.The latest application filed is for "silicon carbide single crystal substrate".
- UETA; Shunsaku - Itami-shi Hyogo
- Ueta; Shunsaku - Hyogo JP
- Ueta; Shunsaku - Itami JP
| Patent | Date |
|---|---|
| Silicon Carbide Single Crystal Substrate App 20210054529 - OKITA; Kyoko ; et al. | 2021-02-25 |
| Silicon carbide substrate Grant 10,361,273 - Kaji , et al. | 2019-07-23 |
| Silicon carbide substrate Grant 10,319,821 - Ueta , et al. | 2019-06-11 |
| Method for manufacturing silicon carbide single crystal Grant 10,184,191 - Hori , et al. Ja | 2019-01-22 |
| Silicon Carbide Substrate App 20180254324 - KAJI; Naoki ; et al. | 2018-09-06 |
| Silicon Carbide Substrate App 20180254323 - UETA; Shunsaku ; et al. | 2018-09-06 |
| Method for producing single crystal Grant 9,777,401 - Ueta , et al. October 3, 2 | 2017-10-03 |
| Method for producing single crystal Grant 9,777,400 - Ueta , et al. October 3, 2 | 2017-10-03 |
| Method Of Manufacturing Silicon Carbide Substrate App 20170152609 - FUJIWARA; Shinsuke ; et al. | 2017-06-01 |
| Method of manufacturing silicon carbide substrate Grant 9,631,296 - Fujiwara , et al. April 25, 2 | 2017-04-25 |
| Method For Manufacturing Silicon Carbide Single Crystal App 20160340796 - HORI; Tsutomu ; et al. | 2016-11-24 |
| Method For Producing Single Crystal App 20160040317 - UETA; Shunsaku ; et al. | 2016-02-11 |
| Method For Producing Single Crystal App 20160032487 - UETA; Shunsaku ; et al. | 2016-02-04 |
| Crucible And Method For Producing Single Crystal App 20160002820 - HORI; Tsutomu ; et al. | 2016-01-07 |
| Method Of Maufacturing Silicon Carbide Substrate App 20150225873 - FUJIWARA; Shinsuke ; et al. | 2015-08-13 |
| Method Of Manufacturing Silicon Carbide Single Crystal App 20140299048 - SASAKI; Makoto ; et al. | 2014-10-09 |
| Ingot, Silicon Carbide Substrate, And Method For Producing Ingot App 20140287226 - HORI; Tsutomu ; et al. | 2014-09-25 |
| Silicon Carbide Substrate, Silicon Carbide Semiconductor Device, Method For Manufacturing Silicon Carbide Substrate, And Method For Manufacturing Silicon Carbide Semiconductor Device App 20130092956 - ISHIBASHI; Keiji ; et al. | 2013-04-18 |
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