Uemura; Tomoki

Patent Applications and Registrations

Patent applications and USPTO patent grants for Uemura; Tomoki.The latest application filed is for "rotary hearth furnace, and method for producing reduced iron using rotary hearth furnace".

Company Profile

2.20.26

Uemura; Tomoki - Kobe JP
UEMURA; Tomoki - Kobe-shi JP
Uemura; Tomoki - Itami N/A JP
UEMURA; Tomoki - Itami-shi JP
Uemura; Tomoki - Hyogo JP
Uemura; Tomoki - Itama-shi JP
Uemura, Tomoki - Osaka-shi JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Rotary hearth furnace, and method for producing reduced iron using rotary hearth furnace Grant 11,428,468 - Uemura , et al. August 30, 2	2022-08-30
Reduced iron production method and device Grant 10,571,193 - Hatakeyama , et al. Feb	2020-02-25
Rotary Hearth Furnace, And Method For Producing Reduced Iron Using Rotary Hearth Furnace App 20190301800 - UEMURA; Tomoki ; et al.	2019-10-03
Reduced Iron Production Method And Production Apparatus App 20190169704 - UEMURA; Tomoki ; et al.	2019-06-06
Reduced Iron Production Method And Device App 20180017326 - HATAKEYAMA; Taiji ; et al.	2018-01-18
Feeding system for reduced iron material Grant 8,915,352 - Tsuge , et al. December 23, 2	2014-12-23
III-nitride single-crystal ingot, III-nitride single-crystal substrate, method of manufacturing III-nitride single-crystal ingot, and method of manufacturing III-nitride single-crystal substrate Grant 8,845,992 - Okahisa , et al. September 30, 2	2014-09-30
Group III nitride semiconductor crystal substrate and semiconductor device Grant 8,698,282 - Okahisa , et al. April 15, 2	2014-04-15
Feeding System For Reduced Iron Material App 20130153368 - Tsuge; Osamu ; et al.	2013-06-20
GaN single-crystal mass and method of its manufacture, and semiconductor device and method of its manufacture Grant 8,294,245 - Nakahata , et al. October 23, 2	2012-10-23
Method For Manufacturing Gallium Nitride Crystal And Gallium Nitride Wafer App 20120164058 - UEMURA; Tomoki ; et al.	2012-06-28
Method for manufacturing gallium nitride crystal and gallium nitride wafer Grant 8,147,612 - Uemura , et al. April 3, 2	2012-04-03
GaxIn1-xN Substrate and GaxIn1-xN Substrate Cleaning Method App 20110132410 - Uemura; Tomoki ; et al.	2011-06-09
Al.sub.xGa.sub.yIn.sub.1-x-yN crystal substrate, semiconductor device, and method of manufacturing the same Grant 7,943,964 - Fujiwara , et al. May 17, 2	2011-05-17
III-Nitride Single-Crystal Ingot, III-Nitride Single-Crystal Substrate, Method of Manufacturing III-Nitride Single-Crystal Ingot, and Method of Manufacturing III-Nitride Single-Crystal Substrate App 20100322841 - Okahisa; Takuji ; et al.	2010-12-23
GaN Single-Crystal Mass and Method of Its Manufacture, and Semiconductor Device and Method of Its Manufacture App 20100314625 - NAKAHATA; Hideaki ; et al.	2010-12-16
Group III Nitride Semiconductor Crystal Substrate and Semiconductor Device App 20100164070 - OKAHISA; Takuji ; et al.	2010-07-01
Method For Manufacturing Gallium Nitride Crystal And Gallium Nitride Wafer App 20090194848 - Uemura; Tomoki ; et al.	2009-08-06
A1xGa yIn 1-x-yN CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME App 20090194847 - Fujiwara; Shinsuke ; et al.	2009-08-06
Group Iii Nitride Semiconductor Crystal Growing Method, Group Iii Nitride Semiconductor Crystal Substrate Fabrication Method, And Group Iii Nitride Semiconductor Crystal Substrate App 20090127664 - OKAHISA; Takuji ; et al.	2009-05-21
Group Iii Nitride Semiconductor Crystal Growing Method, Group Iii Nitride Semiconductor Crystal Substrate Fabrication Method, And Group Iii Nitride Semiconductor Crystal Substrate App 20090127663 - Okahisa; Takuji ; et al.	2009-05-21
Group Iii Nitride Semiconductor Crystal Substrate And Semiconductor Device App 20090127662 - Okahisa; Takuji ; et al.	2009-05-21
Method for Producing GaxIn1-xN(0<x>) Crystal Gaxin1-xn(0<x<1) Crystalline Substrate, Method for Producing GaN Crystal, GaN Crystalline Substrate, and Product App 20090032907 - Uemura; Tomoki ; et al.	2009-02-05
ALxGayIn1-x-yN substrate, cleaning method of AIxGayIn1-x-yN substrate, AIN substrate, and cleaning method of AIN substrate App 20080299375 - Uemura; Tomoki ; et al.	2008-12-04
Method of Cleaning Gaas Substrate, Method of Producing Gaas Substrate, Method of Fabricating Epitaxial Susbstrate, and Gaas Wafer App 20080292877 - Horie; Yusuke ; et al.	2008-11-27
Method of surface treating substrates and method of manufacturing III-V compound semiconductors Grant 7,432,186 - Nishiura , et al. October 7, 2	2008-10-07
Al.sub.xGa.sub.yIn.sub.l-x-yN substrate, cleaning method of Al.sub.xGa.sub.yIn.sub.l-x-yN substrate, AlN substrate, and cleaning method of AlN substrate Grant 7,387,989 - Uemura , et al. June 17, 2	2008-06-17
Method of Surface Treating Substrates and Method of Manufacturing III-V Compound Semiconductors App 20070014915 - Nishiura; Takayuki ; et al.	2007-01-18
AlxGayIn1-x-yN substrate, cleaning method of AlxGayIn1-x-yN substrate, AIN substrate, and cleaning method of AIN substrate App 20060003134 - Uemura; Tomoki ; et al.	2006-01-05
Method for separating chips from diamond wafer Grant 6,805,808 - Fujii , et al. October 19, 2	2004-10-19
Method for making high-purity naphthalenedicarboxylic acid Grant 6,717,009 - Motoyuki , et al. April 6, 2	2004-04-06
Diamond substrate for surface acoustic wave device, and surface acoustic wave device Grant 6,661,152 - Ishibashi , et al. December 9, 2	2003-12-09
Diamond substrate for surface acoustic wave device, and surface acoustic wave device App 20030137217 - Ishibashi, Keiji ; et al.	2003-07-24
Method for separating chips from diamond wafer App 20030127428 - Fujii, Satoshi ; et al.	2003-07-10
Method for making high-purity naphthalenedicarboxylic acid App 20030078452 - Motoyuki, Masahiro ; et al.	2003-04-24
Hard carbon film and surface-acoustic-wave substrate Grant 6,448,688 - Fujii , et al. September 10, 2	2002-09-10
Method for manufacturing 2,6-dimethylnaphthalene App 20020065447 - Yoshida, Shingo ; et al.	2002-05-30
Diamond wafer, method of estimating a diamond wafer and diamond surface acoustic wave device Grant 6,356,006 - Fujii , et al. March 12, 2	2002-03-12
Diamond wafer, method of estimating a diamond wafer and diamond surface acoustic wave device App 20010044029 - Fujii, Satoshi ; et al.	2001-11-22
Diamond wafer, method of estimating a diamond wafer and diamond surface acoustic wave device Grant 6,320,296 - Fujii , et al. November 20, 2	2001-11-20
Hard carbon film and surface-acoustic-wave substrate App 20010030795 - Fujii, Satoshi ; et al.	2001-10-18
Diamond-ZnO surface acoustic wave device Grant 5,959,389 - Nakahata , et al. September 28, 1	1999-09-28

uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.

While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.

All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.