Udagawa; Takashi

Patent Applications and Registrations

Patent applications and USPTO patent grants for Udagawa; Takashi.The latest application filed is for "group iii nitride semiconductor light-emitting element and method for producing same".

Company Profile

0.76.63

Udagawa; Takashi - Chichibu JP
Udagawa; Takashi - Chichibu-shi JP
Udagawa; Takashi - Chinchibu-shi JP
Udagawa; Takashi - Saitama JP
Udagawa, Takashi - Tokyo JP
Udagawa; Takashi - Hiratsuka JP
Udagawa; Takashi - Yokohama JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Group III nitride semiconductor light-emitting element and method for producing same Grant 9,324,912 - Udagawa April 26, 2	2016-04-26
Group iii nitride semiconductor light-emitting element Grant 9,076,913 - Udagawa , et al. July 7, 2	2015-07-07
Group Iii Nitride Semiconductor Light-emitting Element And Method For Producing Same App 20140183580 - Udagawa; Takashi	2014-07-03
Group Iii Nitride Semiconductor Light-emitting Element App 20140103293 - Udagawa; Takashi ; et al.	2014-04-17
Group III nitride semiconductor light-emitting device Grant 8,389,975 - Kikuchi , et al. March 5, 2	2013-03-05
Semiconductor light-emitting diode Grant 8,299,451 - Udagawa October 30, 2	2012-10-30
Group III nitride semiconductor light-emitting device Grant 8,227,790 - Kikuchi , et al. July 24, 2	2012-07-24
Semiconductor device having a group-III nitride superlattice layer on a silicon substrate Grant 8,222,674 - Ohachi , et al. July 17, 2	2012-07-17
Method for production of silicon carbide layer, gallium nitride semiconductor device and silicon substrate Grant 8,216,367 - Udagawa July 10, 2	2012-07-10
Light-emitting diode and light-emitting diode lamp Grant 8,134,176 - Takeuchi , et al. March 13, 2	2012-03-13
Method Of Manufacturing A Semiconductor Device Having A Group-iii Nitride Superlattice Layer On A Silicon Substrate App 20120007050 - OHACHI; Tadashi ; et al.	2012-01-12
Compound semiconductor device Grant 8,084,781 - Udagawa December 27, 2	2011-12-27
Light-emitting diode and light-emitting diode lamp Grant 8,071,991 - Udagawa December 6, 2	2011-12-06
Method of manufacturing a semiconductor device having a group-III nitride superlattice layer on a silicon substrate Grant 8,043,977 - Ohachi , et al. October 25, 2	2011-10-25
Boron phosphide-based semiconductor light-emitting device Grant 8,026,525 - Udagawa September 27, 2	2011-09-27
Semiconductor device including non-stoichiometric silicon carbide layer and method of fabrication thereof Grant 7,989,926 - Udagawa August 2, 2	2011-08-02
Group Iii Nitride Semiconductor Light-emitting Device App 20100288998 - Kikuchi; Tomo ; et al.	2010-11-18
Group Iii Nitride Semiconductor Light-emitting Device App 20100288999 - Kikuchi; Tomo ; et al.	2010-11-18
Compound semiconductor light-emitting device and production method thereof Grant 7,790,481 - Takeuchi , et al. September 7, 2	2010-09-07
Gallium nitride-based semiconductor stacked structure, method for fabrication thereof, gallium nitride-based semiconductor device and lamp using the device Grant 7,781,866 - Udagawa August 24, 2	2010-08-24
Gallium nitride-based semiconductor stacked structure, production method thereof, and compound semiconductor and light-emitting device each using the stacked structure Grant 7,772,599 - Udagawa August 10, 2	2010-08-10
Method for fabricating semiconductor layer and light-emitting diode Grant 7,759,225 - Udagawa July 20, 2	2010-07-20
Gallium nitride-based semiconductor stacked structure Grant 7,759,149 - Udagawa July 20, 2	2010-07-20
Light-emitting Diode And Light-emitting Diode Lamp App 20100155742 - Takeuchi; Rouichi ; et al.	2010-06-24
Compound semiconductor light-emitting device with AlGaInP light-emitting layer formed within Grant 7,732,831 - Takeuchi , et al. June 8, 2	2010-06-08
Compound semiconductor light-emitting diode Grant 7,732,830 - Takeuchi , et al. June 8, 2	2010-06-08
Compound semiconductor light-emitting device including p-type undoped boron-phosphide-based semiconductor layer joined to thin-film layer composed of an undoped hexagonal group III nitride semiconductor Grant 7,732,832 - Udagawa June 8, 2	2010-06-08
Boron phosphide-based compound semiconductor device, production method thereof and light emitting diode Grant 7,646,040 - Udagawa January 12, 2	2010-01-12
Compound Semiconductor Device App 20090309135 - Udagawa; Takashi	2009-12-17
Semiconductor device, semiconductor layer and production method thereof Grant 7,622,398 - Udagawa November 24, 2	2009-11-24
Semiconductor Device And Method For Fabrication Thereof App 20090267081 - Udagawa; Takashi	2009-10-29
N-type ohmic electrode for n-type group III nitride semiconductor, semiconductor light-emitting device with the electrode, and method for forming n-type ohmic electrode Grant 7,598,593 - Udagawa October 6, 2	2009-10-06
Group III nitride semiconductor light-emitting device, forming method thereof, lamp and light source using same Grant 7,576,365 - Mitani , et al. August 18, 2	2009-08-18
Compound semiconductor device, production method of compound semiconductor device and diode Grant 7,573,075 - Udagawa August 11, 2	2009-08-11
Light-emitting Diode And Light-emitting Diode Lamp App 20090152579 - Udagawa; Takashi	2009-06-18
Ohmic electrode structure, compound semiconductor light emitting device having the same, and LED lamp Grant 7,538,361 - Udagawa May 26, 2	2009-05-26
Semiconductor Device And Method Of Manufacturing The Same App 20090127583 - Ohachi; Tadashi ; et al.	2009-05-21
Method For Fabricating Semiconductor Layer And Light-emitting Diode App 20090127571 - Udagawa; Takashi	2009-05-21
Semiconductor Light-emitting Diode App 20090114900 - Udagawa; Takashi	2009-05-07
Boron phoshide-based compound semiconductor device, production method thereof and light-emitting diode Grant 7,508,010 - Udagawa March 24, 2	2009-03-24
Compound semiconductor light-emitting device having pn-junction type hetero structure and forming method thereof Grant 7,498,612 - Odawara , et al. March 3, 2	2009-03-03
Group III nitride semiconductor light-emitting device and method of producing the same Grant 7,495,261 - Kusunoki , et al. February 24, 2	2009-02-24
Method for production of silicon carbide layer, gallium nitride semiconductor device and silicon substrate App 20090045412 - Udagawa; Takashi	2009-02-19
Boron phosphide-based semiconductor light-emitting device and production method thereof Grant 7,488,987 - Udagawa February 10, 2	2009-02-10
Multicolor light-emitting lamp and light source Grant 7,479,731 - Udagawa January 20, 2	2009-01-20
Boron phosphide-based semiconductor device, production method thereof, light-emitting diode and boron phosphide-based semiconductor layer Grant 7,465,499 - Udagawa , et al. December 16, 2	2008-12-16
Gallium Nitride-Based Semiconductor Stacked Structure App 20080283823 - Udagawa; Takashi	2008-11-20
Compound Semiconductor Light-emitting Device And Production Method Thereof App 20080268562 - TAKEUCHI; Ryouichi ; et al.	2008-10-30
Boron Phosphide-based Semiconductor Light-emitting Device And Production Method Thereof App 20080157079 - UDAGAWA; Takashi	2008-07-03
Gallium Nitride-Based Semiconductor Stacked Structure, Method for Fabrication Thereof,Gallium Nitride-Based Semiconductor Device and Lamp Using the Device App 20080135852 - Udagawa; Takashi	2008-06-12
Boron phosphide-based semiconductor light-emitting device and production method thereof Grant 7,365,366 - Udagawa April 29, 2	2008-04-29
Gallium Nitride-Based Semiconductor Stacked Structure, Production Method Thereof, and Compound Semiconductor and Light-Emitting Device Each Using the Stacked Structure App 20080067522 - Udagawa; Takashi	2008-03-20
Semiconductor device, semiconductor layer and production method thereof Grant 7,315,050 - Udagawa January 1, 2	2008-01-01
Group III Nitride Semiconductor Light-Emitting Device and Method of Producing the Same App 20070278509 - Kusunoki; Katsuki ; et al.	2007-12-06
Semiconductor device, semiconductor layer and production method thereof App 20070259510 - Udagawa; Takashi	2007-11-08
P-N Junction-Type Compound Semiconductor Light-Emitting Diode App 20070246719 - Odawara; Michiya ; et al.	2007-10-25
Compound Semiconductor Light-Emitting Device App 20070221946 - Udagawa; Takashi	2007-09-27
Compound Semiconductor Light-Emitting Device And Production Method Thereof App 20070215886 - Takeuchi; Ryouichi ; et al.	2007-09-20
Compound Semiconductor Device, Production Method Of Compound Semiconductor Device And Diode App 20070200114 - Udagawa; Takashi	2007-08-30
Boron Phosphide-Based Semiconductor Light-Emitting Device App 20070194335 - Udagawa; Takashi	2007-08-23
Group III nitride semiconductor light-emitting device, forming method thereof, lamp and light source using same App 20070170458 - Mitani; Kazuhiro ; et al.	2007-07-26
Compound semiconductor light-emitting diode App 20070164304 - Takeuchi; Ryouichi ; et al.	2007-07-19
Compound semiconductor light-emitting device having pn-junction type hetero structure and forming method thereof App 20070131959 - Odawara; Michiya ; et al.	2007-06-14
N-type ohmic electrode for n-type group III nitride semiconductor, semiconductor light-emitting device with the electrode, and method for forming n-type ohmic electrode App 20070108453 - Udagawa; Takashi	2007-05-17
Group-III nitride semiconductor light-emitting device and production method thereof Grant 7,211,836 - Udagawa May 1, 2	2007-05-01
Ohmic electrode structure, compound semiconductor light emitting device having the same and led lamp App 20060214182 - Udagawa; Takashi	2006-09-28
Boron phosphide-based semiconductor light-emitting device and production method thereof App 20060163588 - Udagawa; Takashi	2006-07-27
Electrode for light-emitting semiconductor devices and method of producing the electrode Grant 7,057,210 - Miki , et al. June 6, 2	2006-06-06
Boron phosphide-based compound semiconductor device, production method thereof and light-emitting diode App 20060097358 - Udagawa; Takashi	2006-05-11
Group-III nitride semiconductor device, production method thereof and light-emitting diode Grant 7,034,330 - Udagawa April 25, 2	2006-04-25
Compound semiconductor device, production method thereof, light-emitting device and transistor Grant 7,030,003 - Udagawa April 18, 2	2006-04-18
Boron phosphide-based semiconductor device and production method thereof Grant 7,018,728 - Udagawa March 28, 2	2006-03-28
Boron phosphide-based compound semiconductor device, production method thereof and light-emitting diode App 20060043506 - Udagawa; Takashi	2006-03-02
Group-III nitride semiconductor light-emitting diode, light-emitting diode lamp, light source, electrode for group-III nitride semiconductor light-emitting diode, and method for producing the electrode Grant 6,984,851 - Udagawa January 10, 2	2006-01-10
Boron phosphide-based semiconductor light-emitting device, production method thereof and light-emitting diode Grant 6,936,863 - Udagawa , et al. August 30, 2	2005-08-30
Reciprocating pump type spout unit App 20050155986 - Mizukawa, Masumi ; et al.	2005-07-21
Boron phosphide-based semiconductor device production method thereof light-emitting diode and boron phosphide-based semiconductor layer App 20050121693 - Udagawa, Takashi ; et al.	2005-06-09
Compound semiconductor multilayer structure and bipolar transistor using the same Grant 6,876,013 - Okano , et al. April 5, 2	2005-04-05
Boron phosphide-based semiconductor layer and vapor phase growth method thereof Grant 6,846,754 - Udagawa , et al. January 25, 2	2005-01-25
Method for fabricating a GaInP epitaxial stacking structure Grant 6,841,435 - Udagawa , et al. January 11, 2	2005-01-11
Stacked layer structure, light-emitting device, lamp, and light source unit Grant 6,835,962 - Udagawa December 28, 2	2004-12-28
P-n junction-type compound semiconductor light-emitting device, production method thereof, lamp and light source Grant 6,831,293 - Udagawa December 14, 2	2004-12-14
P-n junction type boron phosphide-based semiconductor light-emitting device and production method thereof Grant 6,831,304 - Udagawa December 14, 2	2004-12-14
Boron phosphide-based semiconductor device and production method thereof App 20040232404 - Udagawa, Takashi	2004-11-25
Electrode for light-emitting semiconductor devices and method of producing the electrode App 20040232429 - Miki, Hisayuki ; et al.	2004-11-25
Boron phosphide-based semiconductor light-emitting device, production method thereof, and light-emitting diode Grant 6,809,346 - Udagawa October 26, 2	2004-10-26
Electrode for light-emitting semiconductor devices and method of producing the electrode Grant 6,800,501 - Miki , et al. October 5, 2	2004-10-05
Boron phosphide-based semiconductor device and production method thereof Grant 6,797,990 - Udagawa September 28, 2	2004-09-28
Multicolor light-emitting lamp and light source App 20040183089 - Udagawa, Takashi	2004-09-23
Electrode for light-emitting semiconductor devices and method of producing the electrode App 20040173809 - Miki, Hisayuki ; et al.	2004-09-09
Group-III nitride semiconductor light-emitting device and production method thereof Grant 6,787,814 - Udagawa September 7, 2	2004-09-07
Boron Phosphide-based Semiconductor Light-emitting Device, Production Method Thereof, And Light-emitting Diode App 20040169191 - Udagawa, Takashi	2004-09-02
Boron phosphide-based semiconductor light-emitting device, production method thereof and light-emitting diode App 20040169184 - Udagawa, Takashi ; et al.	2004-09-02
Compound semiconductor device, production method thereof, light-emitting device and transistor App 20040169180 - Udagawa, Takashi	2004-09-02
Pn-juction type compound semiconductor light-emitting device, production method thereof and white light-emitting diode Grant 6,774,402 - Udagawa August 10, 2	2004-08-10
Group-III nitride semiconductor light-emitting device and production method thereof App 20040144990 - Udagawa, Takashi	2004-07-29
Compound semiconductor device, production method thereof, light-emitting device and transistor Grant 6,730,987 - Udagawa May 4, 2	2004-05-04
Boron phosphide-based semiconductor light-emitting device, production method thereof, and light-emitting diode Grant 6,730,941 - Udagawa May 4, 2	2004-05-04
Group-III nitride semiconductor device, production method thereof and light-emitting diode App 20040079959 - Udagawa, Takashi	2004-04-29
Semiconductor light-emitting device, electrode for the device, method for fabricating the electrode, LED lamp using the device, and light source using the LED lamp Grant 6,677,615 - Takeuchi , et al. January 13, 2	2004-01-13
Semiconductor device, semiconductor layer and production method thereof App 20030234400 - Udagawa, Takashi	2003-12-25
GaInP stacked layer structure and field-effect transistor manufactured using the same Grant 6,664,575 - Udagawa December 16, 2	2003-12-16
Vapor phase deposition system Grant 6,645,302 - Udagawa November 11, 2	2003-11-11
Compound semiconductor multilayer structure and bipolar transistor using the same App 20030183816 - Okano, Taichi ; et al.	2003-10-02
P-n junction-type compound semiconductor light-emitting device, production method thereof, lamp and light source App 20030178631 - Udagawa, Takashi	2003-09-25
Pn-junction type compound semiconductor light-emitting device, production method thereof and white light-emitting diode App 20030173573 - Udagawa, Takashi	2003-09-18
P-n junction type boron phosphide-based semiconductor light-emitting device and production method thereof App 20030160253 - Udagawa, Takashi	2003-08-28
Boron phosphide-based semiconductor layer and vapor phase growth method thereof App 20030162371 - Udagawa, Takashi ; et al.	2003-08-28
Boron phosphide-based semiconductor light-emitting device, production method thereof, and light-emitting diode App 20030141509 - Udagawa, Takashi	2003-07-31
Group-III nitride semiconductor light-emitting diode Grant 6,541,799 - Udagawa April 1, 2	2003-04-01
Group-III nitride semiconductor light-emitting device Grant 6,541,797 - Udagawa April 1, 2	2003-04-01
Semiconductor light-emitting device, electrode for the device, method for fabricating the electrode, LED lamp using the device, and light source using the LED lamp App 20030052323 - Takeuchi, Ryouichi ; et al.	2003-03-20
Compound semiconductor device, production method thereof, light-emitting device and transistor App 20030047795 - Udagawa, Takashi	2003-03-13
Stacked layer structure, light-emitting device, lamp, and light source unit App 20030027099 - Udagawa, Takashi	2003-02-06
GaInP epitaxial stacking structure and fabrication method thereof and a FET transistor using this structure App 20030008440 - Udagawa, Takashi ; et al.	2003-01-09
Electrode for light-emitting semiconductor devices and method of producing the electrode App 20030006422 - Miki, Hisayuki ; et al.	2003-01-09
Boron phosphide-based semiconductor device and production method thereof App 20030001162 - Udagawa, Takashi	2003-01-02
Group-III nitride semiconductor light-emitting diode App 20020113235 - Udagawa, Takashi	2002-08-22
GaInP stacked layer structure and field-effect transistor manufactured using the same App 20020066911 - Udagawa, Takashi	2002-06-06
Group-III nitride semiconductor light-emitting diode, light-emitting diode lamp, light source, electrode for group-III nitride semiconductor light-emitting diode, and method for producing the electrode App 20020000563 - Udagawa, Takashi	2002-01-03
Group-III nitride semiconductor light-emitting device and production method thereof App 20010054717 - Udagawa, Takashi	2001-12-27
Electrode for light-emitting semiconductor devices and method of producing the electrode Grant 6,326,223 - Miki , et al. December 4, 2	2001-12-04
Vapor phase deposition system App 20010035530 - Udagawa, Takashi	2001-11-01
Group-III nitride semiconductor light-emitting device and manufacturing method for the same App 20010036678 - Udagawa, Takashi	2001-11-01
Electrode for light-emitting semiconductor devices and method of producing the electrode Grant 6,268,618 - Miki , et al. July 31, 2	2001-07-31
Method of growing group III nitride semiconductor crystal layer and semiconductor device incorporating group III nitride semiconductor crystal layer Grant 6,194,744 - Udagawa , et al. February 27, 2	2001-02-27
Group-III nitride semiconductor light-emitting device Grant 6,153,894 - Udagawa November 28, 2	2000-11-28
Nitride semiconductor light-emitting device and manufacturing method of the same Grant 6,147,363 - Udagawa November 14, 2	2000-11-14
Method of growing group III nitride semiconductor crystal layer and semiconductor device incorporating group III nitride semiconductor crystal layer Grant 6,069,021 - Terashima , et al. May 30, 2	2000-05-30
Epitaxial wafer device including an active layer having a two-phase structure and light-emitting device using the wafer Grant 5,886,367 - Udagawa March 23, 1	1999-03-23
Process for coating metallic substrate Grant 5,011,733 - Hiraki , et al. April 30, 1	1991-04-30
Process for coating automotive outer bodies Grant 4,756,975 - Fujii , et al. July 12, 1	1988-07-12
Process for coating steel panels Grant 4,755,435 - Fujii , et al. July 5, 1	1988-07-05
Process for coating metallic substrate Grant 4,755,434 - Fujii , et al. July 5, 1	1988-07-05
Vertical type vapor-phase growth apparatus Grant 4,348,981 - Nakanisi , et al. * September 14, 1	1982-09-14
Vertical type vapor-phase growth apparatus Grant 4,290,385 - Nakanisi , et al. September 22, 1	1981-09-22