Twynam; John

Patent Applications and Registrations

Patent applications and USPTO patent grants for Twynam; John.The latest application filed is for "semiconductor device and method of fabricating a semiconductor device".

Company Profile

2.6.13

Twynam; John - Regensburg DE
Twynam; John - Seoul KR
Twynam; John - Yamatokooriyama JP
Twynam; John - Yamatokooriyama-shi JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Semiconductor Device and Method of Fabricating a Semiconductor Device App 20220254913 - Twynam; John ; et al.	2022-08-11
Semiconductor device and method of fabricating a semiconductor device Grant 11,342,451 - Twynam , et al. May 24, 2	2022-05-24
Selective Thermal Annealing Method App 20210384318 - Birner; Albert ; et al.	2021-12-09
Group Iii Nitride-based Transistor Device App 20210336015 - Birner; Albert ; et al.	2021-10-28
Group Iii Nitride Device And Method Of Fabricating A Group Iii Nitride-based Device App 20210336043 - Birner; Albert ; et al.	2021-10-28
Semiconductor Device And Method For Fabricating A Semiconductor Wafer App 20210226039 - Brech; Helmut ; et al.	2021-07-22
Semiconductor Device and Method for Fabricating a Wafer App 20200395447 - Brech; Helmut ; et al.	2020-12-17
Semiconductor Device and Method of Fabricating a Semiconductor Device App 20200176594 - Twynam; John ; et al.	2020-06-04
Semiconductor device and semiconductor circuit including the device Grant 10,403,723 - Twynam Sep	2019-09-03
Semiconductor device and semiconductor circuit including the semiconductor device with enhanced current-voltage characteristics Grant 9,825,026 - Twynam November 21, 2	2017-11-21
Semiconductor Device And Semiconductor Circuit Including The Same App 20170005086 - TWYNAM; John	2017-01-05
Semiconductor Device And Semiconductor Circuit Including The Device App 20160372555 - TWYNAM; John	2016-12-22
Field effect transistor having recessed gate in compositional graded layer Grant 8,017,977 - Twynam September 13, 2	2011-09-13
Insulated-gate field effect transistor Grant 7,629,632 - Twynam December 8, 2	2009-12-08
Compound semiconductor FET Grant 7,538,364 - Twynam May 26, 2	2009-05-26
Field Effect Transistor Having A Compositionally Graded Layer App 20080308843 - Twynam; John	2008-12-18
Insulated-gate field effect transistor App 20080210988 - Twynam; John	2008-09-04
Rectifier App 20080105902 - Twynam; John	2008-05-08
Compound semiconductor FET App 20040211976 - Twynam, John	2004-10-28

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