Twigg; Mark E.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Twigg; Mark E..The latest application filed is for "sigesn virtual substrate formed by molecular beam epitaxy on a si substrate for the strained growth of gesn".

Company Profile

0.9.5

Twigg; Mark E. - Falls Church VA
Twigg; Mark E - Falls Church VA US

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
SiGeSn VIRTUAL SUBSTRATE FORMED BY MOLECULAR BEAM EPITAXY ON A Si SUBSTRATE FOR THE STRAINED GROWTH OF GeSn App 20210296524 - Jernigan; Glenn G. ; et al.	2021-09-23
High power density photo-electronic and photo-voltaic materials and methods of making Grant 8,883,538 - Lebedev , et al. November 11, 2	2014-11-11
High Power Density Photo-electronic and Photo-voltaic Materials and Methods of Making App 20130011954 - Lebedev; Nikolai ; et al.	2013-01-10
High power density photo-electronic and photo-voltaic materials and methods of making Grant 8,294,135 - Lebedev , et al. October 23, 2	2012-10-23
High Power Density Photo-electronic and Photo-voltaic Materials and Methods of Making App 20110073836 - Lebedev; Nikolai ; et al.	2011-03-31
Technique for perfecting the active regions of wide bandgap semiconductor nitride devices Grant 7,470,989 - Henry , et al. December 30, 2	2008-12-30
Technique for perfecting the active regions of wide bandgap semiconductor nitride devices Grant 7,198,970 - Peckerar , et al. April 3, 2	2007-04-03
Technique for perfecting the active regions of wide bandgap semiconductor nitride devices App 20070004106 - Peckerar; Martin ; et al.	2007-01-04
Technique for perfecting the active regions of wide bandgap semiconductor nitride devices App 20050164475 - Peckerar, Martin ; et al.	2005-07-28
Automatically sharp field emission cathodes Grant 6,201,342 - Hobart , et al. March 13, 2	2001-03-13
Atomically sharp field emission cathodes Grant 6,113,451 - Hobart , et al. September 5, 2	2000-09-05
Method for intrinsically doped III-A and V-A compounds Grant 5,525,538 - Twigg , et al. June 11, 1	1996-06-11
Intrinsically doped III-A and V-A compounds having precipitates of V-A element Grant 5,419,785 - Twigg , et al. May 30, 1	1995-05-30

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