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Patent applications and USPTO patent grants for Tufte; Obert N..The latest application filed is for "high transconductance complementary (al,ga)as/gas heterostructure insulated gate field-effect transistor".
Patent | Date |
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High transconductance complementary (Al,Ga)As/gas heterostructure insulated gate field-effect transistor Grant 4,814,851 - Abrokwah , et al. March 21, 1 | 1989-03-21 |
High temperature hetero-epitaxial pressure sensor Grant 4,706,100 - Tufte November 10, 1 | 1987-11-10 |
Integrated three-dimensional localized epitaxial growth of Si with localized overgrowth of GaAs Grant 4,551,394 - Betsch , et al. November 5, 1 | 1985-11-05 |
Ceramic coated with molten silicon Grant 4,137,355 - Heaps , et al. January 30, 1 | 1979-01-30 |
Method for dip-coating ceramic with molten silicon Grant 4,112,135 - Heaps , et al. September 5, 1 | 1978-09-05 |
PROCESS FOR PREPARING EPITAXIAL LAYERS OF Hg .sub.- Cd Te Grant 3,725,135 - Hager , et al. April 3, 1 | 1973-04-03 |
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