Tu; Ru-Chin

Patent Applications and Registrations

Patent applications and USPTO patent grants for Tu; Ru-Chin.The latest application filed is for "gallium-nitride based ultraviolet photo detector".

Company Profile

0.11.16

Tu; Ru-Chin - Tainan TW
Tu; Ru-Chin - Tainan City TW

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Gallium-nitride based ultraviolet photo detector Grant 7,307,291 - Wu , et al. December 11, 2	2007-12-11
Gallium-nitride based light-emitting diode structure with high reverse withstanding voltage and anti-ESD capability Grant 7,180,096 - Wu , et al. February 20, 2	2007-02-20
High-brightness gallium-nitride based light emitting diode structure Grant 7,180,097 - Wu , et al. February 20, 2	2007-02-20
GaN LED structure with p-type contacting layer grown at low-temperature and having low resistivity Grant 7,105,850 - Wu , et al. September 12, 2	2006-09-12
Light-emitting diode structure Grant 7,087,922 - Wu , et al. August 8, 2	2006-08-08
Gallium-nitride based light emitting diode structure with enhanced light illuminance Grant 7,087,924 - Wu , et al. August 8, 2	2006-08-08
Gallium-nitride based ultraviolet photo detector App 20060163681 - Wu; Liang-Wen ; et al.	2006-07-27
High-brightness gallium-nitride based light emitting diode structure Grant 7,049,638 - Wu , et al. May 23, 2	2006-05-23
Light-emitting diode structure App 20060102909 - Wu; Liang-Wen ; et al.	2006-05-18
High-brightness gallium-nitride based light emitting diode structure App 20060102930 - Wu; Liang-Wen ; et al.	2006-05-18
Gallium-nitride based multi-quantum well light-emitting diode n-type contact layer structure Grant 7,042,019 - Wu , et al. May 9, 2	2006-05-09
Structure of GaN light-emitting diode Grant 7,042,018 - Tu , et al. May 9, 2	2006-05-09
High-brightness Gallium-nitride Based Light Emitting Diode Structure App 20060086942 - Wu; Liang-Wen ; et al.	2006-04-27
Gallium-nitride Based Multi-quantum Well Light-emitting Diode N-type Contact Layer Structure App 20060081861 - Wu; Liang-Wen ; et al.	2006-04-20
Gallium-nitride based semiconductor device buffer layer structure App 20060076564 - Wu; Liang-Wen ; et al.	2006-04-13
Structure Of Gan Light-emitting Diode App 20060060873 - Tu; Ru-Chin ; et al.	2006-03-23
Gallium-nitride based light emitting diode light emitting layer structure App 20060054897 - Yu; Cheng-Tsang ; et al.	2006-03-16
Nitride epitaxial layer structure and method of manufacturing the same App 20060049401 - Wen; Tzu-Chi ; et al.	2006-03-09
Epitaxial structure and fabrication method of nitride semiconductor device App 20060049418 - Wen; Tzi-Chi ; et al.	2006-03-09
Gallium-nitride based light-emitting diode structure with high reverse withstanding voltage and anti-ESD capability App 20060049424 - Wu; Liang-Wen ; et al.	2006-03-09
Gallium-nitride based light emitting diode structure App 20060043394 - Wu; Liang-Wen ; et al.	2006-03-02
Gallium-nitride based light emitting diode structure with enhanced light illuminance App 20060038193 - Wu; Liang-Wen ; et al.	2006-02-23
Light-emitting diode and the manufacturing method of the same App 20060038195 - Pan; Shyi-Ming ; et al.	2006-02-23
GaN LED structure with p-type contacting layer grown at low-temperature and having low resistivity App 20060027821 - Wu; Liang-Wen ; et al.	2006-02-09
Gallium-nitride based light-emitting diode epitaxial structure Grant 6,979,835 - Yu , et al. December 27, 2	2005-12-27
Light-emitting diode and the manufacturing method of the same Grant 6,969,627 - Pan , et al. November 29, 2	2005-11-29
Light-emitting diode and the manufacturing method of the same App 20040115845 - Pan, Shyi-Ming ; et al.	2004-06-17

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