loadpatents
name:-0.047183990478516
name:-0.032289981842041
name:-0.0025010108947754
Tsvetkov; Valeri F. Patent Filings

Tsvetkov; Valeri F.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Tsvetkov; Valeri F..The latest application filed is for "large dimension silicon carbide single crystalline materials with reduced crystallographic stress".

Company Profile
2.37.34
  • Tsvetkov; Valeri F. - Durham NC
  • Tsvetkov; Valeri F. - Gasburg VA US
  • - Durham NC US
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Large Dimension Silicon Carbide Single Crystalline Materials With Reduced Crystallographic Stress
App 20220189768 - Khlebnikov; Yuri ;   et al.
2022-06-16
Large Diameter Silicon Carbide Wafers
App 20210198804 - Khlebnikov; Yuri ;   et al.
2021-07-01
Method of producing high quality silicon carbide crystal in a seeded growth system
Grant 9,790,619 - Leonard , et al. October 17, 2
2017-10-17
Producing high quality bulk silicon carbide single crystal by managing thermal stresses at a seed interface
Grant 9,200,381 - Leonard , et al. December 1, 2
2015-12-01
Method for producing semi-insulating resistivity in high purity silicon carbide crystals
Grant 9,059,118 - Jenny , et al. June 16, 2
2015-06-16
Low 1C screw dislocation 3 inch silicon carbide wafer
Grant 8,785,946 - Powell , et al. July 22, 2
2014-07-22
Process for producing silicon carbide crystals having increased minority carrier lifetimes
Grant 08618553 -
2013-12-31
Process for producing silicon carbide crystals having increased minority carrier lifetimes
Grant 8,618,553 - Carter, Jr. , et al. December 31, 2
2013-12-31
Low 1c Screw Dislocation 3 Inch Silicon Carbide Wafer
App 20130161651 - Powell; Adrian ;   et al.
2013-06-27
Low 1C screw dislocation 3 inch silicon carbide wafer
Grant 8,384,090 - Powell , et al. February 26, 2
2013-02-26
Halogen Assisted Physical Vapor Transport Method For Silicon Carbide Growth
App 20120167825 - MUELLER; STEPHAN G. ;   et al.
2012-07-05
Halogen assisted physical vapor transport method for silicon carbide growth
Grant 8,163,086 - Mueller , et al. April 24, 2
2012-04-24
One hundred millimeter single crystal silicon carbide wafer
Grant 8,147,991 - Jenny , et al. April 3, 2
2012-04-03
One Hundred Millimeter Single Crystal Silicon Carbide Wafer
App 20110290174 - Leonard; Robert Tyler ;   et al.
2011-12-01
LED fabrication via ion implant isolation
Grant 7,943,954 - Wu , et al. May 17, 2
2011-05-17
One Hundred Millimeter Single Crystal Silicon Carbide Wafer
App 20110024766 - Jenny; Jason Ronald ;   et al.
2011-02-03
Process For Producing Silicon Carbide Crystals Having Increased Minority Carrier Lifetimes
App 20100320477 - Carter, JR.; Calvin H. ;   et al.
2010-12-23
Process for producing silicon carbide crystals having increased minority carrier lifetimes
Grant 7,811,943 - Carter, Jr. , et al. October 12, 2
2010-10-12
LED Fabrication via Ion Implant Isolation
App 20090309124 - Wu; Yifeng ;   et al.
2009-12-17
Method for Producing Semi-Insulating Resistivity in High Purity Silicon Carbide Crystals
App 20090256162 - Jenny; Jason Ronald ;   et al.
2009-10-15
LED fabrication via ion implant isolation
Grant 7,592,634 - Wu , et al. September 22, 2
2009-09-22
Process for producing high quality large size silicon carbide crystals
Grant 7,563,321 - Powell , et al. July 21, 2
2009-07-21
Halogen Assisted Physical Vapor Transport Method for Silicon Carbide Growth
App 20090056619 - Mueller; Stephan G. ;   et al.
2009-03-05
Low 1C Screw Dislocation 3 Inch Silicon Carbide Wafer
App 20080169476 - Powell; Adrian ;   et al.
2008-07-17
Method and apparatus for the production of silicon carbide crystals
Grant 7,387,680 - Tsvetkov , et al. June 17, 2
2008-06-17
Seed and seedholder combinations for high quality growth of large silicon carbide single crystals
Grant 7,364,617 - Mueller , et al. April 29, 2
2008-04-29
One hundred millimeter single crystal silicon carbide wafer
Grant 7,351,286 - Leonard , et al. April 1, 2
2008-04-01
LED fabrication via ion implant isolation
Grant 7,338,822 - Wu , et al. March 4, 2
2008-03-04
Apparatus and method for the production of bulk silicon carbide single crystals
Grant 7,323,052 - Tsvetkov , et al. January 29, 2
2008-01-29
One hundred millimeter single crystal silicon carbide wafer
Grant 7,323,051 - Hobgood , et al. January 29, 2
2008-01-29
Seeded single crystal silicon carbide growth and resulting crystals
Grant 7,316,747 - Jenny , et al. January 8, 2
2008-01-08
Low 1c screw dislocation 3 inch silicon carbide wafer
Grant 7,314,520 - Powell , et al. January 1, 2
2008-01-01
Apparatus And Method For The Production Of Bulk Silicon Carbide Single Crystals
App 20070283880 - Tsvetkov; Valeri F. ;   et al.
2007-12-13
Reduction of subsurface damage in the production of bulk SiC crystals
Grant 7,300,519 - Tsvetkov , et al. November 27, 2
2007-11-27
Low basal plane dislocation bulk grown SiC wafers
Grant 7,294,324 - Powell , et al. November 13, 2
2007-11-13
One hundred millimeter single crystal silicon carbide water
App 20070240630 - Leonard; Robert Tyler ;   et al.
2007-10-18
One hundred millimeter single crystal silicon carbide wafer
App 20070240633 - Leonard; Robert Tyler ;   et al.
2007-10-18
Seed and Seedholder Combinations for High Quality Growth of Large Silicon Carbide single Crystals
App 20070157874 - Mueller; Stephan ;   et al.
2007-07-12
Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient
Grant 7,220,313 - Fechko, Jr. , et al. May 22, 2
2007-05-22
Seed and seedholder combinations for high quality growth of large silicon carbide single crystals
Grant 7,192,482 - Mueller , et al. March 20, 2
2007-03-20
Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen
Grant 7,147,715 - Malta , et al. December 12, 2
2006-12-12
Method and apparatus for the production of silicon carbide crystals
App 20060254505 - Tsvetkov; Valeri F. ;   et al.
2006-11-16
Seeded single crystal silicon carbide growth and resulting crystals
App 20060213430 - Jenny; Jason Ronald ;   et al.
2006-09-28
Process for producing silicon carbide crystals having increased minority carrier lifetimes
App 20060130742 - Carter; Calvin H. JR. ;   et al.
2006-06-22
Process for producing high quality large size silicon carbide crystals
App 20060118037 - Powell; Adrian ;   et al.
2006-06-08
LED fabrication via ion implant isolation
App 20060108595 - Wu; Yifeng ;   et al.
2006-05-25
One hundred millimeter single crystal silicon carbide wafer
App 20060107890 - Hobgood; Hudson McDonald ;   et al.
2006-05-25
Reduction of subsurface damage in the production of bulk SiC crystals
App 20060102068 - Tsvetkov; Valeri F. ;   et al.
2006-05-18
Low basal plane dislocation bulk grown SiC wafers
App 20060075958 - Powell; Adrian ;   et al.
2006-04-13
Low 1c screw dislocation 3 inch silicon carbide wafer
App 20060073707 - Powell; Adrian ;   et al.
2006-04-06
Seed and seedholder combinations for high quality growth of large silicon carbide single crystals
App 20060032434 - Mueller; Stephan ;   et al.
2006-02-16
LED fabrication via ion implant isolation
App 20050285126 - Wu, Yifeng ;   et al.
2005-12-29
Semi-insulating silicon carbide produced by Neutron transmutation doping
Grant 6,964,917 - Tsvetkov , et al. November 15, 2
2005-11-15
One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer
App 20050126471 - Jenny, Jason Ronald ;   et al.
2005-06-16
LED fabrication via ion implant isolation
App 20050029533 - Wu, Yifeng ;   et al.
2005-02-10
Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient
App 20050022727 - Fechko, George J. JR. ;   et al.
2005-02-03
Method for producing semi-insulating resistivity in high purity silicon carbide crystals
App 20040206298 - Jenny, Jason Ronald ;   et al.
2004-10-21
Semi-Insulating Silicon Carbide Produced by Neutron Transmutation Doping
App 20040201024 - Tsvetkov, Valeri F. ;   et al.
2004-10-14
Semi-insulating silicon carbide without vanadium domination
Grant 6,639,247 - Carter, Jr. , et al. October 28, 2
2003-10-28
Semi-insulating silicon carbide without vanadium domination
Grant 6,396,080 - Carter, Jr. , et al. May 28, 2
2002-05-28
Semi-insulating silicon carbide without vanadium domination
App 20010023945 - Carter, Calvin H. JR. ;   et al.
2001-09-27
Semi-insulating silicon carbide without vanadium domination
App 20010019132 - Carter, Calvin H. JR. ;   et al.
2001-09-06
Semi-insulating silicon carbide without vanadium domination
App 20010017374 - Carter, Calvin H. JR. ;   et al.
2001-08-30
Semi-insulating silicon carbide without vanadium domination
Grant 6,218,680 - Carter, Jr. , et al. April 17, 2
2001-04-17
Colorless silicon carbide gemstones
Grant 6,200,917 - Carter , et al. March 13, 2
2001-03-13
Colorless silicon carbide crystals
Grant 6,025,289 - Carter , et al. February 15, 2
2000-02-15
Growth of colorless silicon carbide crystals
Grant 5,718,760 - Carter , et al. February 17, 1
1998-02-17

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