Tsvetkov; Denis

Patent Applications and Registrations

Patent applications and USPTO patent grants for Tsvetkov; Denis.The latest application filed is for "group iii nitride articles and methods for making same".

Company Profile

0.8.6

Tsvetkov; Denis - Morrisville NC
Tsvetkov; Denis - Gaithersburg MD

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Group III nitride articles and methods for making same Grant 9,263,266 - Hanser , et al. February 16, 2	2016-02-16
Group Iii Nitride Articles And Methods For Making Same App 20150279675 - Hanser; Andrew D. ; et al.	2015-10-01
Group Iii Nitride Articles Having Nucleation Layers, Transitional Layers, And Bulk Layers App 20150200256 - Hanser; Andrew D. ; et al.	2015-07-16
Group III nitride articles having nucleation layers, transitional layers, and bulk layers Grant 9,082,890 - Hanser , et al. July 14, 2	2015-07-14
Method for making group III nitride articles Grant 8,435,879 - Hanser , et al. May 7, 2	2013-05-07
Inclusion-free uniform semi-insulating group III nitride substrates and methods for making same Grant 8,202,793 - Preble , et al. June 19, 2	2012-06-19
Inclusion-free Uniform Semi-insulating Group Iii Nitride Substrates And Methods For Making Same App 20110042682 - Preble; Edward A. ; et al.	2011-02-24
Inclusion-free uniform semi-insulating group III nitride substrate and methods for making same Grant 7,777,217 - Preble , et al. August 17, 2	2010-08-17
Group III Nitride Articles and Methods for Making Same App 20100044718 - Hanser; Andrew D. ; et al.	2010-02-25
Inclusion-free uniform semi-insulating group III nitride substrates and methods for making same App 20070141823 - Preble; Edward A. ; et al.	2007-06-21
Method for fabricating a P-N heterojunction device utilizing HVPE grown III-V compound layers and resultant device Grant 6,890,809 - Karpov , et al. May 10, 2	2005-05-10
Method of crystal growth and resulted structures Grant 6,579,359 - Mynbaeva , et al. June 17, 2	2003-06-17
Method for fabricating a P-N heterojunction device utilizing HVPE grown III-V compound layers and resultant device App 20030049898 - Karpov, Sergey ; et al.	2003-03-13

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