loadpatents
name:-0.0064141750335693
name:-0.013065099716187
name:-0.00051999092102051
Tsukune; Atsuhiro Patent Filings

Tsukune; Atsuhiro

Patent Applications and Registrations

Patent applications and USPTO patent grants for Tsukune; Atsuhiro.The latest application filed is for "semiconductor device having insulating layers containing oxygen and a barrier layer containing manganese".

Company Profile
0.10.4
  • Tsukune; Atsuhiro - Kawasaki JP
  • Tsukune; Atsuhiro - Inagi JP
  • Tsukune; Atsuhiro - Kanagawa JP
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Semiconductor device having insulating layers containing oxygen and a barrier layer containing manganese
Grant 9,704,740 - Ochimizu , et al. July 11, 2
2017-07-11
Semiconductor Device Having Insulating Layers Containing Oxygen And A Barrier Layer Containing Manganese
App 20170047246 - OCHIMIZU; Hirosato ;   et al.
2017-02-16
Semiconductor device fabrication method
Grant 8,916,468 - Ochimizu , et al. December 23, 2
2014-12-23
Semiconductor Device Having Insulating Layers Containing Oxygen And A Barrier Layer Containing Manganese
App 20140353829 - OCHIMIZU; Hirosato ;   et al.
2014-12-04
Semiconductor device having insulating layers containing oxygen and a barrier layer containing manganese
Grant 8,836,126 - Ochimizu , et al. September 16, 2
2014-09-16
Semiconductor Device Fabrication Method
App 20130273701 - Ochimizu; Hirosato ;   et al.
2013-10-17
Semiconductor Device
App 20100038792 - OCHIMIZU; Hirosato ;   et al.
2010-02-18
Semiconductor device and method of manufacturing the same
Grant 6,635,523 - Uchiyama , et al. October 21, 2
2003-10-21
Semiconductor device manufacturing apparatus and its cleaning method
Grant 5,609,721 - Tsukune , et al. March 11, 1
1997-03-11
Graphite columnar heating body for semiconductor wafer heating
Grant 5,233,163 - Mieno , et al. August 3, 1
1993-08-03
Chemical vapor deposition method using a plasma self-cleaning
Grant 5,041,311 - Tsukune , et al. August 20, 1
1991-08-20
Method of selectively depositing tungsten upon a semiconductor substrate
Grant 4,804,560 - Shioya , et al. February 14, 1
1989-02-14
Process for the formation of phosphosilicate glass coating
Grant 4,781,945 - Nishimura , et al. November 1, 1
1988-11-01

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