Tsui; Yan Man

Patent Applications and Registrations

Patent applications and USPTO patent grants for Tsui; Yan Man.The latest application filed is for "trench mosfet device with polycrystalline silicon source contact structure".

Company Profile

0.22.17

Tsui; Yan Man - Union City CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method of making a trench MOSFET device with improved on-resistance Grant 7,094,640 - Hshieh , et al. August 22, 2	2006-08-22
Trench MOSFET device with polycrystalline silicon source contact structure Grant 7,015,125 - Hshieh , et al. March 21, 2	2006-03-21
Method for assembling a semiconductor chip utilizing conducting bars rather than bonding wires Grant 6,927,094 - Chen , et al. August 9, 2	2005-08-09
Trench MOSFET device with polycrystalline silicon source contact structure App 20050062075 - Hshieh, Fwu-Iuan ; et al.	2005-03-24
Trench MOSFET device with polycrystalline silicon source contact structure Grant 6,822,288 - Hshieh , et al. November 23, 2	2004-11-23
Trench DMOS transistor having improved trench structure Grant 6,781,196 - So , et al. August 24, 2	2004-08-24
Trench DMOS transistor with embedded trench schottky rectifier Grant 6,762,098 - Hshieh , et al. July 13, 2	2004-07-13
Trench MOSFET device with improved on-resistance App 20040113203 - Hshieh, Fwu-Iuan ; et al.	2004-06-17
Two-mask trench schottky diode Grant 6,740,951 - Tsui , et al. May 25, 2	2004-05-25
Method of forming a trench MOSFET with structure having increased cell density and low gate charge Grant 6,713,352 - Hshieh , et al. March 30, 2	2004-03-30
Trench schottky rectifier Grant 6,707,127 - Hshieh , et al. March 16, 2	2004-03-16
Trench MOSFET device with improved on-resistance Grant 6,657,254 - Hshieh , et al. December 2, 2	2003-12-02
Trench DMOS transistor with embedded trench schottky rectifier App 20030207538 - Hshieh, Fwu-Iuan ; et al.	2003-11-06
Semiconductor device packaging assembly and method for manufacturing the same App 20030205792 - Chen, Max ; et al.	2003-11-06
Semiconductor trench device with enhanced gate oxide integrity structure Grant 6,620,691 - Hshieh , et al. September 16, 2	2003-09-16
Trench DMOS transistor having improved trench structure App 20030168696 - So, Koon Chong ; et al.	2003-09-11
Trench DMOS transistor with embedded trench schottky rectifier Grant 6,593,620 - Hshieh , et al. July 15, 2	2003-07-15
Trench MOSFET device with polycrystalline silicon source contact structure App 20030107080 - Hshieh, Fwu-Iuan ; et al.	2003-06-12
Trench MOSFET device with improved on-resistance App 20030094624 - Hshieh, Fwu-Iuan ; et al.	2003-05-22
DMOS transistor structure having improved performance Grant 6,548,860 - Hshieh , et al. April 15, 2	2003-04-15
Method of forming a trench schottky rectifier Grant 6,518,152 - Hshieh , et al. February 11, 2	2003-02-11
Trench DMOS transistor having a double gate structure Grant 6,518,127 - Hshieh , et al. February 11, 2	2003-02-11
Trench mosfet with structure having low gate charge App 20030011028 - Hshieh, Fwu-luan ; et al.	2003-01-16
Two-mask trench schottky diode App 20020175342 - Tsui, Yan Man ; et al.	2002-11-28
Devices and methods for addressing optical edge effects in connection with etched trenches Grant 6,475,884 - Hshieh , et al. November 5, 2	2002-11-05
Trench MOSFET with structure having low gate charge Grant 6,472,708 - Hshieh , et al. October 29, 2	2002-10-29
Devices and methods for addressing optical edge effects in connection with etched trenches App 20020093048 - Hshieh, Fwu-Iuan ; et al.	2002-07-18
Trench schottky rectifier App 20020066926 - Hshieh, Fwu-Iuan ; et al.	2002-06-06
Semiconductor trench device with enhanced gate oxide integrity structure App 20020061623 - Hshieh, Fwu-Iuan ; et al.	2002-05-23
Mosfet Power Device Manufactured With Reduced Number Of Masks By Fabrication Simplified Processes App 20020030224 - HSHIEH, FWU-IUAN ; et al.	2002-03-14
Devices and methods for addressing optical edge effects in connection with etched trenches App 20020008281 - Hshieh, Fwu-Iuan ; et al.	2002-01-24
Semiconductor device packaging assembly and method for manufacturing the same App 20020000647 - Chen, Max ; et al.	2002-01-03
Trench DMOS transistor having a double gate structure App 20010023961 - Hshieh, Fwu-Iuan ; et al.	2001-09-27
Trenched Dmos Device With Low Gate Charges App 20010003367 - HSHIEH, FWU-IUAN ; et al.	2001-06-14
Power MOSFET device manufactured with simplified fabrication processes to achieve improved ruggedness and product cost savings Grant 5,923,065 - So , et al. July 13, 1	1999-07-13
MOSFET structure and fabrication process implemented by forming deep and narrow doping regions through doping trenches Grant 5,895,951 - So , et al. April 20, 1	1999-04-20
Edge wrap-around protective extension for covering and protecting edges of thick oxide layer Grant 5,883,410 - So , et al. March 16, 1	1999-03-16
Mosfet termination design and core cell configuration to increase breakdown voltage and to improve device ruggedness Grant 5,877,529 - So , et al. March 2, 1	1999-03-02
DMOS transistors having trenched gate oxide Grant 5,763,915 - Hshieh , et al. June 9, 1	1998-06-09

uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.

While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.

All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.