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Incoherent type-III materials for charge carriers control devices
Grant 10,374,037 - Tsu , et al. | 2019-08-06 |
Type III hetrojunction--broken gap HJ
Grant 10,203,526 - Tsu , et al. Feb | 2019-02-12 |
Growth of semiconductors on hetero-substrates using graphene as an interfacial layer
Grant 9,812,527 - Zhang , et al. November 7, 2 | 2017-11-07 |
Growth Of Semiconductors On Hetero-substrates Using Graphene As An Interfacial Layer
App 20170194437 - ZHANG; Yong ; et al. | 2017-07-06 |
Growth of semiconductors on hetero-substrates using graphene as an interfacial layer
Grant 9,601,579 - Zhang , et al. March 21, 2 | 2017-03-21 |
Type Iii Hetrojunction - Broken Gap Hj
App 20170010484 - TSU; Raphael ; et al. | 2017-01-12 |
Growth Of Semiconductors On Hetero-substrates Using Graphene As An Interfacial Layer
App 20160064489 - ZHANG; Yong ; et al. | 2016-03-03 |
Incoherent Type-iii Materials For Charge Carriers Control Devices
App 20150340439 - TSU; Raphael ; et al. | 2015-11-26 |
Enhanced electron mobility at the interface between GD2O3(100)/N-SI(100)
Grant 9,000,432 - Tsu , et al. April 7, 2 | 2015-04-07 |
Enhanced Electron Mobility At The Interface Between Gd2o3(100)/n-si(100)
App 20140306315 - TSU; Raphael ; et al. | 2014-10-16 |
Enhanced electron mobility at the interface between Gd.sub.2O.sub.3(100)/N-Si(100)
Grant 8,846,506 - Tsu , et al. September 30, 2 | 2014-09-30 |
Enhanced Electron Mobility At The Interface Between Gd2o3(100)/n-si(100)
App 20130285048 - TSU; Raphael ; et al. | 2013-10-31 |
Epitaxial SiO.sub.x barrier/insulation layer
Grant 7,105,895 - Wang , et al. September 12, 2 | 2006-09-12 |
Si/C superlattice useful for semiconductor devices
Grant 7,023,010 - Wang , et al. April 4, 2 | 2006-04-04 |
Epitaxial siox barrier/insulation layer
App 20060003500 - Wang; Chia-Gee ; et al. | 2006-01-05 |
Si/C superlattice useful for semiconductor devices
App 20040227165 - Wang, Chia Gee ; et al. | 2004-11-18 |
Epitaxial SiOx barrier/insulation layer
Grant 6,376,337 - Wang , et al. April 23, 2 | 2002-04-23 |
Negative differential resistance device based on tunneling through microclusters, and method therefor
Grant 5,895,934 - Harvey , et al. April 20, 1 | 1999-04-20 |
Silicon nanostructure light-emitting diode
Grant 5,627,386 - Harvey , et al. May 6, 1 | 1997-05-06 |
Light emitting diode with electro-chemically etched porous silicon
Grant 5,324,965 - Tompsett , et al. June 28, 1 | 1994-06-28 |
Quantum well structures useful for semiconductor devices
Grant 5,216,262 - Tsu June 1, 1 | 1993-06-01 |
Passivated polycrystalline semiconductors quantum well/superlattice structures fabricated thereof
Grant 5,051,786 - Nicollian , et al. September 24, 1 | 1991-09-24 |
Method of forming photovoltaic quality amorphous alloys by passivating defect states
Grant 4,569,697 - Tsu , et al. February 11, 1 | 1986-02-11 |
Heterojunction superlattice with potential well depth greater than half the bandgap
Grant 4,250,515 - Esaki , et al. February 10, 1 | 1981-02-10 |
Infrared semiconductor device with superlattice region
Grant 4,163,238 - Esaki , et al. July 31, 1 | 1979-07-31 |
Superlattice Harmonic Generator & Mixer For Electromagnetic Waves
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Semiconductor Device With Superlattice Region
Grant 3,626,257 - Esaki , et al. December 7, 1 | 1971-12-07 |
Semiconductor Bulk Oscillator
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