Tsaur; Shyh-Chang
Patent Applications and Registrations
Patent applications and USPTO patent grants for Tsaur; Shyh-Chang.The latest application filed is for "high density, electrically erasable, floating gate memory cell".
- Tsaur; Shyh-Chang - Stafford TX
| Patent | Date |
|---|---|
| High density, electrically erasable, floating gate memory cell Grant 4,561,004 - Kuo , et al. December 24, 1 | 1985-12-24 |
| Closely-spaced double level conductors for MOS read only Grant 4,385,432 - Kuo , et al. May 31, 1 | 1983-05-31 |
| High density dynamic memory cell Grant 4,376,983 - Tsaur , et al. March 15, 1 | 1983-03-15 |
| Method of making high density memory cells with improved metal-to-silicon contacts Grant 4,372,031 - Tsaur , et al. February 8, 1 | 1983-02-08 |
| High density, electrically erasable, floating gate memory cell Grant 4,317,272 - Kuo , et al. March 2, 1 | 1982-03-02 |
| Multiple dummy cell layout for MOS random access memory Grant 4,198,697 - Kuo , et al. April 15, 1 | 1980-04-15 |
| Median spaced dummy cell layout for MOS random access memory Grant 4,195,357 - Kuo , et al. March 25, 1 | 1980-03-25 |
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